Optical Absorption In Hg1−xCdxTe
Keyword(s):
AbstractThe theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. A new analytical expression for linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh and Burstein-Moss shift. Numerical results are obtained for Hg1−xCdxTe for several values of x and temperature, and compared with recent experimental data. The agreement is found to be good.
1977 ◽
Vol 33
(2)
◽
pp. 343-343
◽
Effects of Bremsstrahlung on the Linear Absorption Coefficient for Relativistic Electron Diffraction
1967 ◽
Vol 23
(3)
◽
pp. 566-575
◽
2006 ◽
2018 ◽
Vol 16
(3)
◽
pp. 329-342
2018 ◽
Vol 74
(1)
◽
pp. 54-65
◽