Active Anti-Guide Vertical Cavity Surface Emitting Lasers with Diffused Quantum Wells Structure

1997 ◽  
Vol 484 ◽  
Author(s):  
S. F. Yu ◽  
E. Herbert Li ◽  
W. M. Man
Keyword(s):  
Quantum Wells ◽  
Single Mode ◽  
Transverse Mode ◽  
Hole Burning ◽  
Cavity Surface ◽  
Mode Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractThe enhancement of single transverse mode operation in vertical cavity surface emitting lasers by using interdiffused quantum wells is proposed and analyzed. It is observed that the influence of self-focusing (arising from carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized by introducing a step diffused quantum wells structure inside the core region of quantum-well active layer. Stable single-mode operation in vertical cavity surface emitting lasers can also be maintained.

scholarly journals Single Mode Operation of Impurity-Induced Disordering Large Area Vertical Cavity Surface Emitting Lasers

1996 ◽  
Vol 450 ◽  
Author(s):  
C. W. Lo ◽  
S. F. Yu
Keyword(s):  
Single Mode ◽  
Hole Burning ◽  
Cavity Surface ◽  
Large Area ◽  
Single Mode Operation ◽  
Mode Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

ABSTRACTVertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50μm.

Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

2018 ◽  
Vol 52 (1) ◽  
pp. 93-99 ◽  
Author(s):  
S. A. Blokhin ◽  
M. A. Bobrov ◽  
A. A. Blokhin ◽  
A. G. Kuzmenkov ◽  
A. P. Vasil’ev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Emission Line ◽  
Line Width ◽  
Single Mode ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Влияние конструкции резонатора на ширину линии одномодовых вертикально-излучающих лазеров ближнего ИК-диапазона

2018 ◽  
Vol 44 (1) ◽  
pp. 67
Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.А. Блохин ◽  
А.П. Васильев ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Cavity ◽  
Single Mode ◽  
Cavity Surface ◽  
Carrier Injection ◽  
Near Ir ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractThe studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For low mirror loss, lasers with a 1λ cavity and carrier injection through distributed Bragg reflectors demonstrate a linewidth of 70 MHz and its growth to 110 MHz with increasing mirror loss (corresponding differential of efficiency ∼0.65 W/A). The design of the optical cavity with carrier injection through intracavity contacts and low-Q composition Bragg lattices reduces the linewidth to 40 MHz in spite of high mirror loss (corresponding differential efficiency of ∼0.6 W/A).

scholarly journals Ширина линии излучения и alpha-фактор одномодовых вертикально-излучающих лазеров спектрального диапазона 850 нм на основе квантовых ям InGaAs/AlGaAs -=SUP=-*-=/SUP=-

2018 ◽  
Vol 52 (1) ◽  
pp. 98
Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
А.А. Блохин ◽  
А.Г. Кузьменков ◽  
А.П. Васильев ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Emission Line ◽  
Output Power ◽  
Single Mode ◽  
Cavity Surface ◽  
Optical Output ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractThe emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.

Oxide-confined leaky vertical-cavity surface-emitting lasers for single-mode operation

SPIE Newsroom ◽  
2016 ◽  
Author(s):  
Nikolay Ledentsov Jr ◽  
Vitaly Shchukin ◽  
Joerg Kropp ◽  
Mikel Agustin ◽  
Nikolay N. Ledentsov
Keyword(s):  
Single Mode ◽  
Cavity Surface ◽  
Single Mode Operation ◽  
Mode Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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