Covalent Silicon Bonding At Room Temperature In Ultrahigh Vacuum
Keyword(s):
Ex Situ
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AbstractOne possibility of a low temperature joining techniques relies on the bonding of atomically clean surfaces. Results on the application of this method to silicon direct bonding are being presented. Clean surfaces for bonding were prepared by ex situ chemical cleaning with ensuing hydrogen passivation and their subsequent activation by thermal desorption of the hydrogen in ultrahigh vacuum (UHV). In UHV at room temperature, the wafers were gently brought into contact to initiate the bonding process. Without any subsequent heat treatment, the adhesive strength thus achieved was equivalent to the cohesion of bulk silicon: covalent bonds join the two crystals.
2013 ◽
Vol 807-809
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pp. 2110-2114
2018 ◽
Vol 284
◽
pp. 615-620
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Strength of Commercial Aluminum Alloys after Equal Channel Angular Pressing and Post-ECAP Processing
2006 ◽
Vol 114
◽
pp. 91-96
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2005 ◽
Vol 108-109
◽
pp. 643-648
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Fatigue Behavior of High Manganese TWIP Steels and of Low Alloy Q&P Steels for Car-Body Applications
2014 ◽
Vol 783-786
◽
pp. 713-720
Keyword(s):
2021 ◽
pp. 1805-1812