Recent Progress in Implantation and Annealing of Gan and Aigan

1997 ◽  
Vol 482 ◽  
Author(s):  
J. C. Zolper ◽  
J. Han ◽  
S. B. Van Deusen ◽  
M. H. Crawford ◽  
R. M. Biefeld ◽  
...  
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Damage Accumulation ◽  
Room Temperature ◽  
Recent Progress ◽  
Rutherford Backscattering ◽  
Hall Measurements ◽  
Implantation Damage ◽  
Selective Area ◽  
Access Resistance

AbstractHeterostructure modulation doped transistors (MODFETs) based on AlGaN/GaN structures have demonstrated impressive DC and microwave performance often despite high transistor access resistance. One approach to reducing the access resistance is to use selective area Si-implantation. While several reports exist on Si-implantation in GaN, little work has been done on implantation in AlGaN. In addition, more information on the annealing of implantation damage in GaN is needed to optimize its use in FETs and thyristors.We report the electrical and structural properties of Si-implanted Al0.15Ga0.85N based on Hall measurements and Rutherford Backscattering (RBS) spectra, respectively. Al0.15Ga0.85N shows less damage accumulation than GaN for a room temperature Si-implant dose of 5×1015 cm-2 based on the minimum channeling yield (26% for AlGaN as compared to 34% for GaN), however, as with GaN, this damage is difficult to remove by thermal annealing at °C.

Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 343-346 ◽  
Author(s):  
M. Obernhofer ◽  
Michael Krieger ◽  
Frank Schmid ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Hall Effect ◽  
Structural Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Electrical Activation ◽  
Implantation Damage ◽  
Aluminum Ions

Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.

Scandium And Gallium Implantation Doping Of Silicon Carbide

1998 ◽  
Vol 512 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
I. Koutzarov ◽  
H. Okumura ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Crystal Lattice ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
High Resistivity ◽  
Hall Measurements ◽  
Doping Behaviour

ABSTRACTRutherford backscattering, Raman spectroscopy as well as photoluminescence, resistivity and Hall measurements have been used to investigate the doping behaviour of Scandium and Gallium ions implanted into Silicon Carbide respectively. The recovery of the crystal lattice after implantation at room temperature followed by rapid thermal annealing is shown to be less effective in the case of Scandium compared with Gallium. Scandium implanted SiC exhibited a high resistivity in comparison to Gallium implanted crystals.

Damage Introduced by Chdamage Introduced by CH4/H2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs

1991 ◽  
Vol 240 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
W. De Raedt ◽  
C. Van Hoof ◽  
G. Borghs ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Reactive Ion Etching ◽  
Electrical Characteristics ◽  
Plasma Exposure ◽  
Ion Etching ◽  
Hall Measurements ◽  
Low Temperature Photoluminescence

ABSTRACTThe damage introduced by CH4/H2 reactive ion etching (RIE) and its recovery after thermal annealing has been investigated by Hall measurements and low temperature photoluminescence (PL) on pseudomorphic AlGaAs/InGaAs modulation doped structures. After plasma exposure, the PL intensity has significantly decreased and shifted in energy. In order to study the recovery of the damage introduced by the plasma, thermal annealing was done at temperatures between 350 and 500°C. We observed that the luminescence emission is totally recovered after annealing at 450°C. Hall measurements at room temperature (RT) and at 77K showed that the electrical characteristics of these structures can be restored only after thermal annealing at 500°C.The optimised etching conditions have been applied in a fabrication process for submicron dry gate recessed pseudomorphic delta-doped AlGaAs/InGaAs modulation doped field effect transistors (MODFETs). For a 0.25 mm gatelength device the maximum DC transconductance value was as high as 680 mS/mm. The same value was extracted from measurements at 15 GHz.

Ion Implantation Damage and its Annealing Characteristics in an AlAs/GaAs Layer Structure

1988 ◽  
Vol 144 ◽  
Author(s):  
A. G. Cullis ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
N. G. Chew ◽  
C. R. Whitehouse ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damage Accumulation ◽  
Strong Influence ◽  
Layer Structure ◽  
Gaas Layer ◽  
Lattice Defects ◽  
Damage State ◽  
Implantation Damage

ABSTRACTThe implantation of Ar+ ions into AlAs/GaAs layered samples is shown to give very different damage structures in the two materials. While the GaAs is relatively easily amorphised, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. The behaviour of the different damage structures when subjected to rapid thermal annealing treatments is described in some detail. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

Study of SiGe Alloys with Different Germanium Concentrations Implanted with Mn and As Ions

2008 ◽  
Vol 587-588 ◽  
pp. 298-302
Author(s):  
S. Magalhães ◽  
Nikolai A. Sobolev ◽  
Nikolay V. Abrosimov ◽  
Eduardo Alves
Keyword(s):  
Structural Properties ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Lattice Parameter ◽  
Rutherford Backscattering ◽  
Full Recovery ◽  
X Ray Diffraction ◽  
X Ray ◽  
Xrd Techniques

In this work we studied the structural properties of SiGe alloys with different Ge molar compositions co-implanted with manganese and arsenic ions. The ions were implanted at room temperature to fluences of 1×1015, 5×1015 and 1×1016 cm–2 and energies of 170 keV (Mn) and 200 keV (As) in order to achieve the overlap of the implanted profiles. The alloys were studied with Rutherford Backscattering/Channeling spectrometry (RBS/C) and X-ray Diffraction (XRD) techniques. After implantation the implanted region (150 nm) turns into amorphous according with RBS/C. The evolution of the lattice parameter was studied using XRD. The annealing at 550°C induces the recrystallization of the amorphous layer for the sample implanted with the lower fluence and the full recovery is complete after annealing at 700°C. The samples implanted with higher fluences did not reveal any noticeable recovery. The Mn and As profiles do not exhibit significant changes during the annealing at 550oC.

Recent progress on the design of hollow carbon spheres to host sulfur in room-temperature sodium–sulfur batteries

2020 ◽  
Vol 35 (6) ◽  
pp. 630-645
Author(s):  
Jia-ying Yang ◽  
Hao-jie Han ◽  
Hlib Repich ◽  
Ri-cheng Zhi ◽  
Chang-zhen Qu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Recent Progress ◽  
Carbon Spheres ◽  
Hollow Carbon ◽  
Sodium Sulfur ◽  
Hollow Carbon Spheres

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

2006 ◽  
Vol 504 (1-2) ◽  
pp. 269-273
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
K.R. Mok ◽  
Lap Chan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Continuum Modeling ◽  
Implantation Damage ◽  
Post Implantation
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