The Velocity-Field Characteristic Of Indium Nitride

1997 ◽  
Vol 482 ◽  
Author(s):  
S. K. O'Leary ◽  
B. E. Foutz ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
U. V. Bhapkar
Keyword(s):  
Gallium Nitride ◽  
Velocity Field ◽  
Drift Velocity ◽  
Room Temperature ◽  
Indium Nitride ◽  
Device Performance ◽  
Temperature Peak ◽  
Ensemble Monte Carlo ◽  
Field Characteristic ◽  
Nominal Parameter

AbstractWe determine the velocity-field characteristic of wurtzite indium nitride using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high room temperature peak drift velocity, 4.2 × 107 cm/s, at a doping concentration of 1 × 1017 cm−3. This exceeds that of gallium nitride, 2.9 × 107 cm/s, by approximately 40 %. For our nominal parameter selections, the saturation drift velocity of indium nitride is found to be 1.8 × 107 cm/s. The device performance of this material, as characterized by the cut-off frequency, is found to superior to that of gallium nitride, gallium arsenide, and silicon.

Velocity Overshoot And Ballistic Electron Transport In Wurtzite Indium Nitride

1997 ◽  
Vol 482 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
U. V. Bhapkar
Keyword(s):  
Drift Velocity ◽  
Field Effect Transistors ◽  
Indium Nitride ◽  
Ballistic Transport ◽  
Velocity Overshoot ◽  
Ensemble Monte Carlo ◽  
Ballistic Electron ◽  
Low Field ◽  
Ballistic Electron Transport ◽  
Low Field Mobility

AbstractUsing an ensemble Monte Carlo approach, ballistic transport and velocity overshoot effects are examined in InN and compared with those in GaN and GaAs. It is found that the peak overshoot velocity is in general greater than both GaN and GaAs. Furthermore, the velocity overshoot in InN occurs over distances in excess of 0.4 μm, which is comparable to GaAs but is significantly longer than the overshoot in GaN. These strong overshoot effects, combined with a high peak drift velocity, large low-field mobility, and large saturation drift velocity, should allow InN based field effect transistors to outperform their GaN and GaAs based counterparts.

Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
B. L. Gelmont ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Analytical Model ◽  
Optical Phonon ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Polar Optical Phonon ◽  
Scattering Mechanism ◽  
Loss Mechanism ◽  
One Dimensional ◽  
Optical Phonon Scattering

ABSTRACTWe develop a simple, one-dimensional, analytical model, which describes electron transport in gallium nitride. We focus on the polar optical phonon scattering mechanism, as this is the dominant energy loss mechanism at room temperature. Equating the power gained from the field with that lost through scattering, we demonstrate that beyond a critical electric field, 114 kV/cm at T = 300 K, the power gained from the field exceeds that lost due to polar optical phonon scattering. This polar optical phonon instability leads to a dramatic increase in the electron energy, this being responsible for the onset of intervalley transitions. The predictions of our analytical model are compared with those of Monte Carlo simulations, and are found to be in satisfactory agreement.

Search for High Damping Metallic Glasses

2006 ◽  
Vol 319 ◽  
pp. 151-156 ◽  
Author(s):  
Y. Hiki ◽  
M. Tanahashi ◽  
Shin Takeuchi
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Internal Friction ◽  
Metallic Glass ◽  
Room Temperature ◽  
Temperature Stability ◽  
Temperature Peak ◽  
High Temperature Side ◽  
Side Slope ◽  
Temperature Side

In a hydrogen-doped metallic glass, there appear low-temperature and high-temperature internal friction peaks respectively associated with a point-defect relaxation and the crystallization. The high-temperature-side slope of low-temperature peak and also the low-temperature-side slope of high-temperature peak enhance the background internal friction near the room temperature. A hydrogen-doped Mg-base metallic glass was proposed as a high-damping material to be used near and somewhat above the room temperature. Stability of the high damping was also checked.

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

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