Depth of Penetration of the Plasma Fluorination Reaction into Various Polymers

1985 ◽  
Vol 48 ◽  
Author(s):  
Eve A. Wildi ◽  
Gerald J. Scilla ◽  
Alan DeLuca
Keyword(s):  
Glow Discharge ◽  
Surface Reaction ◽  
Ion Sputtering ◽  
Depth Of Penetration ◽  
Plasma Surface ◽  
Depth Profiles ◽  
Discharge Treatment ◽  
Oxygen Ion ◽  
Before And After ◽  
Reactive Gas

ABSTRACTThe surfaces of a variety of polymers presenting either primary, secondary, tertiary, vinyl or aromatic protons to the reactive gas environment were fluorinated by glow discharge treatment. Depth profiles of the plasma surface reaction were obtained by SIMS with oxygen ion sputtering. Further information was obtained from the appearance of ESCA traces of these substrates before and after the reaction.

Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

2009 ◽  
Vol 615-617 ◽  
pp. 565-568 ◽  
Author(s):  
Alexander A. Lebedev ◽  
A.E. Belyaev ◽  
N.S. Boltovets ◽  
V.N. Ivanov ◽  
Raisa V. Konakova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Heat Resistance ◽  
Contact Structure ◽  
Schottky Barriers ◽  
Electrophysical Properties ◽  
Depth Profiles ◽  
Contact Metallization ◽  
Before And After ◽  
Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

Parameters for Nitrogen Diffusion in Ni, Ti, and Al Obtained from Implanted Bilayers

1992 ◽  
Vol 279 ◽  
Author(s):  
K. K. Bourdelle ◽  
D. O. Boerma
Keyword(s):  
Nuclear Reaction ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Nitride Layer ◽  
Nuclear Reaction Analysis ◽  
Nitrogen Diffusion ◽  
Depth Profiles ◽  
Solid Interface ◽  
Before And After ◽  
Concentration Depth Profiles

ABSTRACTNi foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.

Stabilized aqueous dispersion of multi-walled carbon nanotubes obtained by RF glow-discharge treatment

2009 ◽  
Vol 11 (7) ◽  
pp. 1817-1822 ◽  
Author(s):  
Leron Vandsburger ◽  
Edward J. Swanson ◽  
Jason Tavares ◽  
Jean-Luc Meunier ◽  
Sylvain Coulombe
Keyword(s):  
Carbon Nanotubes ◽  
Glow Discharge ◽  
Aqueous Dispersion ◽  
Discharge Treatment ◽  
Multi Walled Carbon Nanotubes ◽  
Rf Glow Discharge ◽  
Walled Carbon Nanotubes

Apatite coated on organic polymers by biomimetic process: Improvement in its adhesion to substrate by glow-discharge treatment

1995 ◽  
Vol 29 (3) ◽  
pp. 349-357 ◽  
Author(s):  
M. Tanahashi ◽  
T. Yao ◽  
T. Kokubo ◽  
M. Minoda ◽  
T. Miyamoto ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Process Improvement ◽  
Organic Polymers ◽  
Discharge Treatment

Determination of the Interface Roughness between Ni-Coated Layer and Cu Substrate by Glow Discharge Optical Emission Spectroscopy Depth Profiling

2015 ◽  
Vol 1094 ◽  
pp. 181-187
Author(s):  
Yi Liu ◽  
Wei Xuan Lin ◽  
Wei Bing Ye ◽  
Huan Sheng Li ◽  
Jiong Li ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Depth Profiling ◽  
Mesh Size ◽  
Optical Emission ◽  
Interface Roughness ◽  
Depth Profiles ◽  
Information Depth ◽  
Cu Substrates

The depth profiles of Ni-coated copper substrates polished by different mesh size sandpapers were measured by the glow discharge optical emission spectroscopy (GDOES) depth profiling technique. The measured depth profiles were well fitted by the MRI-CRAS model developed recently on the basis of the Mixing-Roughness-Information depth (MRI) model and the CRAter-Simulation (CRAS) model, taking into account the pronounced crater effect upon GDOES depth profiling. The crater effect upon depth profiling was characterized quantitatively and the interface roughness values between the coated Ni layer and the Cu substrates were determined and compared with the ones measured by AFM.

Sign in / Sign up

Export Citation Format

Share Document