The Characterization of Alloyed NiGeAuAgAu Ohmic Contacts to AlInAs/GaInAs Heterostructure by Auger Electron Spectroscopy and Wavelength Dispersive X-Ray Analysis

1985 ◽  
Vol 48 ◽  
Author(s):  
P. M. Capani ◽  
S. D. Mukerjee ◽  
L. Rathbun ◽  
H. T. Griem ◽  
G. W. Wicks ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Dimensional Electron ◽  
X Ray ◽  
Dimensional Electron Gas ◽  
Lattice Matched

ABSTRACTIn a lattice-matched <100> InP/Ga0.47In0.53As/Al0.48In0.52As system used for modulation-doped field effect transistors (MODFETs), low resistance ohmic contacts to the two-dimensional electron gas have been fabricated using alloyed NiGeAuAgAu metallization. In this work we examine the use of Auger electron spectroscopy (AES) and wavelength dispersive x-ray spectroscopy (WDX) analyses for studying the metal-semiconductor interactions and their correlation with measured ohmic contact resistance.

Characterization of AuGeNi ohmic contacts on n-GaAs using electrical measurements, Auger electron spectroscopy and X-ray diffractometry

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 807-810 ◽  
Author(s):  
J.B.B Oliveira ◽  
C.A Olivieri ◽  
J.C Galzerani ◽  
A.A Pasa ◽  
L.P Cardoso ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ohmic Contacts ◽  
Electrical Measurements ◽  
X Ray

Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopy

2001 ◽  
Author(s):  
James R. Wasson ◽  
Pawitter J. S. Mangat ◽  
Jon M. Slaughter ◽  
Scott D. Hector ◽  
Sasa Bajt ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray
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