Measurement of the Thermoelectric Properties of Quasicrystalline AlPdRe and AlCuFe Alloys.

1997 ◽  
Vol 478 ◽  
Author(s):  
M.L. Wilson ◽  
S. Legault ◽  
R.M. Stroud ◽  
T.M. Tritt
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
General Class ◽  
Careful Investigation

AbstractWe report the measurement of the thermal conductivity, electrical resistivity, and thermoelectric power on two quasicrystalline compounds, A170Pd20Re10 and A162.5Cu25Fe12.5. These materials are found to posses a thermal conductivity of order 1 W/m K, while retaining their semimetallic conductivity. These features coupled with moderately large thermopowers, up to 55 μV/K, imply that the general class of quasicrystalline compounds warrants careful investigation for their potential as new thermoelectric materials.

Thermoelectric Properties of InxCo4-yNiySb12 Skutterudite Compounds

2007 ◽  
Vol 1044 ◽  
Author(s):  
Veronique Da Ros ◽  
Juliusz Leszczynski ◽  
Bertrand Lenoir ◽  
Anne Dauscher ◽  
Christophe Candolfi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermal Properties ◽  
Chemical Composition ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
X Ray Diffraction ◽  
X Ray

AbstractThe preparation of partially filled n-type InxCo4Sb12 skutterudite compounds has been recently reported. The results were particularly promising, the materials exhibiting a ZT value far higher than one at moderated temperature. In this paper, we propose to investigate another way to tune the electrical and thermal properties by substituting Co atoms by Ni atoms in InxCo4Sb12. InxCo4-yNiySb12 polycrystalline samples have been prepared by a conventional metallurgical route. Structural analyses have been carried out by X-ray diffraction. The chemical composition and micro-homogeneity have been checked by electron probe microanalysis. Measurements of the electrical resistivity, thermoelectric power and thermal conductivity have been performed between 300 and 800 K. The influence of the presence of Ni on the thermoelectric properties of InxCo4Sb12 compounds is presented and discussed.

THERMOELECTRICITY OF Ca2.9Ce0.1Co4O9+δ BASED NANOCOMPOSITES WITH Cu2O NANOINCLUSION

2013 ◽  
Vol 27 (22) ◽  
pp. 1350108
Author(s):  
FANG JU LI
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Energy Harvesting ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Phonon Scattering ◽  
Temperature Dependent ◽  
Resistivity Measurements ◽  
Carrier Scattering ◽  
Scattering Centers

Ca 2.9 Ce 0.1 Co 4 O 9+δ/x wt% Cu 2 O nanocomposites have been studied as the thermoelectric materials for energy harvesting purpose. We evaluate the thermoelectric properties of the composites through temperature dependent thermopower, thermal conductivity and resistivity measurements. It is found that the introduction of Cu 2 O nanoparticles serves as phonon scattering centers, which reduces the thermal conductivity. The nanoinclusions contribute to a remarkable increase in electrical resistivity due to enhanced carrier scattering. As a result, Cu 2 O nanoinclusions do not succeed in improving ZT of Ca 2.9 Ce 0.1 Co 4 O 9+δ material.

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

Effects of Oxygen-Reduction on Thermoelectric Properties of Sr0.61Ba0.39Nb2O6 Ceramics

2014 ◽  
Vol 787 ◽  
pp. 210-214 ◽  
Author(s):  
Yi Li ◽  
Jian Liu ◽  
Chun Lei Wang ◽  
Wen Bin Su ◽  
Yuan Hu Zhu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Oxygen Reduction ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Power Factor

The thermoelectric properties of Sr0.61Ba0.39Nb2O6 ceramics, reduced in various conditions, were investigated in the temperature range from 323K to 1073K. Both the electrical resistivity and the absolute Seebeck coefficient decreased with the deepening degree of oxygen-reduction. However, the decrease of the electrical resistivity had a major influence on the thermoelectric power factor. Therefore, the more heavily reduced sample can gain the higher value of thermoelectric power factor. It has been observed that the thermal conductivity increased with the deepening degree of oxygen-reduction, which indicates that the scattering of the oxygen vacancies produced by reduction does not play a dominant role in the thermal conduction. In spite of the increase of the thermal conductivity, the oxygen-reduction still promoted the thermoelectric figure of merit via the increase of the thermoelectric power factor. And the most heavily reduced Sr0.61Ba0.39Nb2O6 ceramic has the highest thermoelectric figure of merit (~0.18 at 1073 K) among all the samples.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Influence of R3+ ion sizes on the thermoelectric properties of RBaCo4O7+δ ceramics

2015 ◽  
Vol 29 (26) ◽  
pp. 1550154 ◽  
Author(s):  
F. Gao ◽  
Q. L. He ◽  
F. Wu ◽  
D. L. Yang ◽  
X. Hu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Solid State ◽  
Thermoelectric Properties ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Oxygen Adsorption ◽  
Reaction Method ◽  
Transition Phenomenon ◽  
Seebeck Coefficients

The influence of [Formula: see text] ion sizes on the electrical resistivity, Seebeck coefficients, thermal conductivity and [Formula: see text] values of [Formula: see text] prepared by the solid-state reaction method was investigated from 373 K to 973 K. The electrical resistivity decreases with decreasing [Formula: see text] ion sizes. Both the electrical resistivity and the Seebeck coefficients have a transition at about 630 K. Especially, the transition phenomenon disappears gradually with decreasing [Formula: see text] ion sizes, and is attributed to the oxygen adsorption of [Formula: see text]. The [Formula: see text] values increase with rising temperature or decreasing [Formula: see text] ion sizes. The [Formula: see text] with the smallest [Formula: see text] size has the maximum [Formula: see text] value that reaches 0.1 at 973 K.

Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Measured Temperature Range ◽  
Temperature Range

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

High-temperature thermoelectric properties of W-substituted CaMnO3

2013 ◽  
Vol 1490 ◽  
pp. 3-8 ◽  
Author(s):  
Dimas S. Alfaruq ◽  
James Eilertsen ◽  
Philipp Thiel ◽  
Myriam H Aguirre ◽  
Eugenio Otal ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Soft Chemistry ◽  
Absolute Seebeck Coefficient

AbstractThe thermoelectric properties of W-substituted CaMn1-xWxO3-δ (x = 0.01, 0.03; 0.05) samples, prepared by soft chemistry, were investigated from 300 K to 1000 K and compared to Nb-substituted CaMn0.98Nb0.02O3-δ. All compositions exhibit both an increase in absolute Seebeck coefficient and electrical resistivity with temperature. Moreover, compared to the Nb-substituted sample, the thermal conductivity of the W-substituted samples was strongly reduced. This reduction is attributed to the nearly two times greater mass of tungsten. Consequently, a ZT of 0.19 was found in CaMn0.97W0.03O3-δ at 1000 K, which was larger than ZT exhibited by the 2% Nb-doped sample.

Thermoelectric properties of S-doped Cu2Se materials synthesized by high-pressure and high-temperature method

2019 ◽  
Vol 34 (01) ◽  
pp. 2050006
Author(s):  
Lisha Xue ◽  
Chao Fang ◽  
Weixia Shen ◽  
Manjie Shen ◽  
Wenting Ji ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Composition Change ◽  
Selenium Compounds ◽  
Competitive Effects ◽  
Temperature Method ◽  
Pressure Synthesis

High-pressure technique is an effective route to synthesize thermoelectric materials and tune transport properties simultaneously. In this work, S-doped copper–selenium compounds [Formula: see text], [Formula: see text] were successfully synthesized by high-pressure and high-temperature (HPHT) technology in just 30 min. [Formula: see text] samples show layered morphology composed of abundant pores and lattice defects. The appropriate S introduction ([Formula: see text] and 0.03) can effectively enhance Seebeck coefficient and reduce the thermal conductivity of [Formula: see text]. Compared with the pure [Formula: see text] sample, [Formula: see text] exhibits a 30% lower thermal conductivity, but the decline of power factor by the distinctly increased electrical resistivity at high temperature results in a smaller zT at temperature [Formula: see text] K. The variations of thermoelectric properties are resulted from the competitive effects between S-doping and actual composition change (Cu:S). It indicates that S-doping is not so effective in improving the zT value of [Formula: see text] materials by high-pressure synthesis.

Effect of Ho Doping on the High-Temperature Thermoelectric Properties of Ca3Co4O9-Based Oxides

2011 ◽  
Vol 228-229 ◽  
pp. 947-950
Author(s):  
Tao Zhu ◽  
Jun Min Zhou
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Lattice Thermal Conductivity ◽  
Solid Reaction

Ca3-xHoxCo4O9 (x=0.0, 0.15, 0.3, 0.45) samples were prepared using solid reaction and the effect of Ho doping on their high thermoelectric properties were investigated. The substitution of Ho for Ca resulted in an increase of both thermopower and electrical resistivity which could be attributed to the decrease of hole concentrations. The Ho-doped samples had lower thermal conductivity than Ca3Co4O9 due to their lower electronic and lattice thermal conductivity. The largest ZT values were attained in Ca2.7Ho0.3Co4O9 sample.

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