Structural Characterization Of SrBi2Ta209 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Bond Length ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Structural Characterization ◽  
Sol Gel ◽  
Frequency Shifts ◽  
Gel Technique

ABSTRACTThin films of SrBiTa2O9, (SBT) were deposited on Si using Sol-Gel technique. The thicknesses of the films are 200 nm (A) and 400 nm (B), respectively. SEM studies show isolated grains in both SBT films with a grain size distribution between 0.1 and 0.5 μ. However, most of the grain size in the film is smaller than 0.1 μ. EDX analysis indicates that the films are inhomogeneous. FTIR external reflectivity measurements of the samples show bands around 1260, 936(for SBT2), 955(for SBT4), 770, 600 cm−1. Micro Raman spectra shows inhomogeneities in the SBT films. Bands corresponding to the SBT materials were found, but frequency shifts and broadening were observed in almost every band. Particularly, the band around 818 cm−1 was found to change from 785 to 827 cm−1. Also, due to the stretching of the Ta06 octahedron, the Alg mode was found to be approximately 163 cm−1. This change seems to be related to the Ta-0 bond length.

Microstructural Characterization of Copper Thin Films on Metallic Underlayers

1994 ◽  
Vol 338 ◽  
Author(s):  
E. M. Zielinski ◽  
R. P. Vinci ◽  
J. C. Bravman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Microstructural Characterization ◽  
Abnormal Growth ◽  
Annealing Temperatures ◽  
Bimodal Grain Size ◽  
Bimodal Grain Size Distribution

ABSTRACTGrain size distribution and texture of thin films of sputtered copper were characterized as a function of underlayer choice, deposition temperature and annealing temperature. For Cu deposited on Ta at room temperature and annealed at 100, 150, 200 and 250 °C, abnormal growth of the (100) orientation was observed for annealing temperatures above 150 °C, resulting in a bimodal grain size distribution. This orientation was also seen to grow abnormally for films deposited and annealed under identical conditions, but with a W underlayer. (100) growth for this case was observed at annealing temperatures as low as 100 °C. Abnormal grain growth was suppressed for Cu deposited on Ta at 150 °C and annealed to 250 °C. A bimodal grain size distribution was observed in a similar sample deposited on W under identical conditions, however, the abnormally growing orientation for this case was observed to be the (111) orientation, not the (100) orientation.

Magnetic behaviour of sol–gel driven BiFeO 3 thin films with different grain size distribution

2016 ◽  
Vol 401 ◽  
pp. 180-187 ◽  
Author(s):  
Shiwani Sharma ◽  
P. Saravanan ◽  
O.P. Pandey ◽  
V.T.P. Vinod ◽  
Miroslav Černík ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Sol Gel ◽  
Magnetic Behaviour ◽  
Different Grain Size

Sol-Gel Synthesis and Characterization of Neodymium-Ion Doped Nanostructured Titania Thin Films

2001 ◽  
Vol 703 ◽  
Author(s):  
Andrew Burns ◽  
W. Li ◽  
C. Baker ◽  
S.I. Shah
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Anatase Phase ◽  
Sol Gel ◽  
Ionic Radii ◽  
Si Substrates ◽  
Gel Technique ◽  
The Difference ◽  
Sol Gel Synthesis

ABSTRACTNd doped TiO2 nanostructured thin films were prepared by sol-gel technique on quartz and Si substrates using TiCl4 precursor. As-deposited amorphous films were annealed to form anatase phase in the thin films. The film grain size increased with annealing temperature. Above 800°C, rutile began to segregate and the grain size decreased slightly.The photodegradation of 2-chlorophenol (2-CP) was studied. Doping TiO2 with Nd+3 reduced the photodegradation time. The difference in the ionic radii of Nd+3 and Ti+4 and the oxygen affinities of Nd and Ti were responsible for this effect. These differences help promote electron trapping, thereby increasing the lifetime of the holes which are responsible for the oxidation of 2-CP.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

scholarly journals Structural characterization of cerium-doped hydroxyapatite nanoparticles synthesized by an ultrasonic-assisted sol-gel technique

2018 ◽  
Vol 10 ◽  
pp. 956-963 ◽  
Author(s):  
Piaw Phatai ◽  
Cybelle Morales Futalan ◽  
Songkot Utara ◽  
Pongtanawat Khemthong ◽  
Sirilak Kamonwannasit
Keyword(s):  
Structural Characterization ◽  
Sol Gel ◽  
Hydroxyapatite Nanoparticles ◽  
Ultrasonic Assisted ◽  
Gel Technique
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