Vacancy Related Defects in La0.5Sr0.5CoO3-δ Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
D. J. Keeble ◽  
S. Madhukar ◽  
B. Nielsen ◽  
A. Krishnan ◽  
P. Asoka-Kumar ◽  
...  

ABSTRACTLaser ablated La0.5Sr0.5CoO3-δ thin films have been studied by Doppler-broademng-detected positron annihilation using a variable-energy positron beam. The oxygen partial pressure during cooling from the growth temperature was altered through the range 760 torr to 10−5 torr to change the oxygen non-stoichiometry of the films.The measured Doppler broadened lineshape parameter S was found to increase with increasing oxygen nonstoichiometry. For films cooled with an oxygen partial pressure of ≤ 10−4 Torr positron trapping to monovacancy type defects is infered. It is proposed that Sr ion oxygen vacancy complexes are likely trapping sites.For the film cooled in 10−5 torr oxygen the magnitude of the increase in S, with respect to that measured from the film cooled in 760 Torr oxygen, showed positron trapping to vacancy cluster defects is occuring.

Oxygen ◽  
2021 ◽  
Vol 1 (1) ◽  
pp. 62-72
Author(s):  
Gasidit Panomsuwan ◽  
Nagahiro Saito

Epitaxial SrTiO3 (STO) thin films were grown on (001)-oriented LaAlO3 (LAO) substrates at 800 °C by an ion beam sputter deposition (IBSD). Oxygen partial pressure (PO2) was varied at 1.5 × 10−5, 1.5 × 10−4, and 1.5 × 10−3 Torr during the growth. The effects of PO2 on crystal structure, oxygen vacancy, and surface morphology of the STO films were investigated and are discussed to understand their correlation. It was found that PO2 played a significant role in influencing the crystal structure, oxygen vacancy, and surface morphology of the STO films. All STO films grew on the LAO substrates under a compressive strain along an in-plane direction (a- and b-axes) and a tensile strain along the growth direction (c-axis). The crystalline quality of STO films was slightly improved at higher PO2. Oxygen vacancy was favorably created in the STO lattice grown at low PO2 due to a lack of oxygen during growth and became suppressed at high PO2. The existence of oxygen vacancy could result in a lattice expansion in both out-of-plane and in-plane directions due to the presence of Ti3+ instead of Ti4+ ions. The surface roughness of the STO films gradually decreased and was nearly close to that of the bare LAO substrate at high PO2, indicating a two-dimensional (2D) growth mode. The results presented in this work provide a correlation among crystal structure, oxygen vacancy, and surface morphology of the epitaxial STO films grown by IBSD, which form a useful guideline for further study.


2017 ◽  
Vol 644 (1) ◽  
pp. 190-196 ◽  
Author(s):  
Yong Zeng ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Feng Zhu ◽  
Xianzhe Liu ◽  
...  

2013 ◽  
Vol 25 (2) ◽  
pp. 772-777 ◽  
Author(s):  
Saurabh Kumar Pandey ◽  
Sushil Kumar Pandey ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
M. Gupta ◽  
...  

Author(s):  
K Naveen Kumar ◽  
Habibuddin Shaik ◽  
Amulya Pawar ◽  
L.N. Chandrashekar ◽  
Sheik Abdul Sattar ◽  
...  

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