Comparison of Stresses in Al Lines Under Various Passivations

1997 ◽  
Vol 473 ◽  
Author(s):  
S. Lee ◽  
J. C. Bravman ◽  
P. A. Flinn ◽  
T. N. Marffib

ABSTRACTThermal stresses in pure Al lines passivated with a baseline 1000Å oxide and additional passivations of 0.5μm oxide, 1μm polymer, or 0.5μm, 1μm, or 2μ nitride were analyzed. Results from finite element analysis and X-ray measurements were compared, and samples were examined in a high voltage SEM for stress voids. For unvoided samples, calculated and measured results showed good correlation, while results for the voided samples showed little correlation due to stress relaxation through voiding. Initial in-situ electromigration test results showed that electromigration voids can occur at stress void sites.

2013 ◽  
Vol 43 (1) ◽  
pp. 52-56 ◽  
Author(s):  
Hsueh-Hsien Hsu ◽  
Tz-Cheng Chiu ◽  
Tao-Chih Chang ◽  
Shin-Yi Huang ◽  
Hsin-Yi Lee ◽  
...  

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1262
Author(s):  
Alessandro Mingotti ◽  
Federica Costa ◽  
Lorenzo Peretto ◽  
Roberto Tinarelli ◽  
Paolo Mazza

Stray capacitances (SCs) are a serious issue in high-voltage (HV) applications. Their presence can alter the circuit or the operation of a device, resulting in wrong or even disastrous consequences. To this purpose, in this work, we describe the modeling of SCs in HV capacitive dividers. Such modeling does not rely on finite element analysis or complicated geometries; instead, it starts from an equivalent circuit of a conventional measurement setup described by the standard IEC 61869-11. Once the equivalent model including the SCs is found, closed expressions of the SCs are derived starting from the ratio error definition. Afterwards, they are validated in a simulation environment by implementing various circuit configurations. The results demonstrate the expressions applicability and effectiveness; hence, thanks to their simplicity, they can be implemented by system operators, researchers, and manufacturers avoiding the use of complicated methods and technologies.


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