Study on Relaxor Ferroelectric Thin Films of Tungsten Bronze Pb1-xBaxNb2O6 by RF Magnetron Sputtering

1997 ◽  
Vol 472 ◽  
Author(s):  
X. Xiao ◽  
N. Xu ◽  
L. Li
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ferroelectric Properties ◽  
Tungsten Bronze ◽  
Orthorhombic Phase ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Sputtering Deposition ◽  
Excess Amount ◽  
Lead Barium Niobate

ABSTRACTFerroelectric thin films of tungsten bronze lead barium niobáte (PBN) were fabricated by radio frequency magnetron sputtering. Oriented growths of the thin films were observed along (001) in tetragonal phase and along (002) in orthorhombic phase. Excess amount of PbO (6 wt %) in the PBN targets were used to compensate Pb evaporation during sputtering deposition. Ferroelectric properties were investigated as a function of annealing temperatures. The thin film with high quality was annealed at 650 °C, while its remnant polarization (Pr) and coercive field (Ec) were equal to 47.9 μC/cm2 and 5.2 kV/cm, respectively.

Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

2010 ◽  
Vol 434-435 ◽  
pp. 296-299
Author(s):  
Jian Ping Yang ◽  
Xing Ao Li ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Zhu Lin Weng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

2008 ◽  
Vol 368-372 ◽  
pp. 109-111
Author(s):  
Xing Ao Li ◽  
Zu Li Liu ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Jian Ping Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

scholarly journals Structural, Optical, and Electrochromic Properties of Pure and Mo-Doped WO3 Films by RF Magnetron Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Vempuluri Madhavi ◽  
Paruchuri Kondaiah ◽  
Obili Mahammad Hussain ◽  
Suda Uthanna
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Orthorhombic Phase ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Optical Modulation ◽  
Coated Glass Substrate ◽  
Electrochromic Properties ◽  
Cyclic Voltametry ◽  
Near Ir

Pure and Mo-doped WO3 films were formed on ITO-coated glass substrate held at 473 K by RF magnetron sputtering technique. The structural, morphological, and optical properties of pure and Mo-doped WO3 thin films have been systematically studied. The structural properties revealed that the pure WO3 films exhibited a (020) reflection related to the orthorhombic phase of WO3, whereas Mo-doped films showed (200) reflection. The surface morphology revealed that pure WO3 films showed the dense surface and Mo-doped films contained agglomerated grains which were uniformly distributed on the surface of the substrate. The optical transmittance decreased from 85% to 75% for pure and Mo-doped WO3 films, respectively. The electrochromic properties of the films were measured by cyclic voltametry in 1 M Li2SO4 electrolyte solution. The optical modulation of pure WO3 films at near IR was 50%, and the calculated color efficiency was 33.8 cm2/C, while in Mo-doped WO3 the efficiency improved to 42.5 cm2/C.

Antibacterial property of CuCrO2 thin films prepared by RF magnetron sputtering deposition

Vacuum ◽  
2013 ◽  
Vol 87 ◽  
pp. 174-177 ◽  
Author(s):  
Te-Wei Chiu ◽  
Yung-Chin Yang ◽  
An-Chou Yeh ◽  
Yung-Po Wang ◽  
Yi-Wei Feng
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Antibacterial Property ◽  
Rf Magnetron Sputtering ◽  
Sputtering Deposition
Sign in / Sign up

Export Citation Format

Share Document