The Effects of Temperature Ramping on MOCVD Al Film Properties

1997 ◽  
Vol 472 ◽  
Author(s):  
D. Yang ◽  
R. Jonnalagadda ◽  
V. Mahadev ◽  
T. S. Cale ◽  
J. T. Hillman ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Constant Temperature ◽  
Crystal Orientation ◽  
Orientation Data ◽  
Aluminum Films ◽  
Temperature Ramp ◽  
Average Grain Size ◽  
Orientation Average ◽  
Short Time ◽  
Deposition Conditions

ABSTRACTWe present and discuss experiments designed to demonstrate the effects of ramping substrate temperature during the deposition of TIBA sourced aluminum on Si(100) and TiNx coated silicon (TiN) wafers. We also present results from experiments in which the precursor flow was pulsed (started and stopped) for a short time at a higher temperature followed by temperature ramp down and deposition at a lower (constant) temperature on TiN wafers. Aluminum growth rates and crystal orientation data are presented for different deposition conditions on Si(100) wafers. Aluminum nucleation densities, crystal orientation, average grain size, surface roughness, growth rate and resistivity data are presented for different deposition conditions on TiN wafers. During substrate temperature ramp down from 673 K on TiN wafers, when the precursor flow was pulsed for a short time at higher temperatures, and then resumed at a lower (constant) temperature 573 K, there was a significant increase in both deposition rates and fraction of (111) orientation. The resistivities of these films were close to that of bulk aluminum. Films deposited during substrate temperature ramp down on TiN substrates resulted in higher fractions of (111) oriention and higher resistivities as compared to the films deposited at constant substrate temperature and during the ramp up of substrate temperature. The films deposited on Si(100) wafers during substrate temperature ramp down from 673 K to 573 K had strong Al(200) orientation.

Microstructure and conversion electron Mössbauer studies of M decrease in Fe3O4 films

1990 ◽  
Vol 5 (4) ◽  
pp. 824-828 ◽  
Author(s):  
C. Ortiz ◽  
C. Hwang ◽  
A. H. Morrish ◽  
X. Z. Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Substrate Temperature ◽  
Conversion Electron ◽  
Rf Sputtering ◽  
Octahedral Sites ◽  
Transmission Electron ◽  
Average Grain Size ◽  
Deposition Conditions

This paper analyzes the influence of the deposition conditions (substrate temperature and oxygen flow) on the magnetic moment of Fe3O4 films grown by reactive RF sputtering. With conversion electron Mössbauer spectroscopy and transmission electron microscopy of specific microstructures we have identified different mechanisms which can contribute to the decrease of M in our samples: decrease of average grain size (superparamagnetism) and distortion of the lattice which may induce mispopulation of tetrahedral and octahedral sites and decrease of crystalline quality.

Recrystallization of Oxygen Contaminated Al Films

1986 ◽  
Vol 71 ◽  
Author(s):  
G.J. Van Der Kolk ◽  
M.J. Verkerk
Keyword(s):  
Grain Size ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Relative Increase ◽  
Partial Pressures ◽  
Average Grain Size

AbstractAl was evaporated at oxygen partial pressures, PO2, varying between 10−7 and 10−4 Pa on substrates of silicon nitride. The substrate temperature was varied between 20 °C and 250°C. The films were annealed at temperatures up to 500°C.For Al films deposited at 20°C, it was found that the average grain size decreases with increasing oxygen partial pressure. After annealing recrystallization was observed. The relative increase of grain size was less for higher values of pO2. Annealing gave rise to a broad grain size distribution.For Al films deposited at 250°C, the presence of oxygen caused the growth of rough inhomogeneous films. This inhomogeneous structure remained during annealing.

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

scholarly journals Microscopic Stress and Strain Evolved in a Twinning-Induced Plasticity Fe-Mn-C Steel

2014 ◽  
Vol 996 ◽  
pp. 135-140
Author(s):  
Shigeru Suzuki ◽  
Shigeo Sato ◽  
Koji Hotta ◽  
Eui Pyo Kwon ◽  
Shun Fujieda ◽  
...  
Keyword(s):  
Strain Distribution ◽  
Crystal Orientation ◽  
Fem Simulation ◽  
Tensile Loading ◽  
Stress And Strain ◽  
X Ray Diffraction ◽  
Principal Stresses ◽  
Orientation Data ◽  
Tensile Direction ◽  
X Ray

White X-ray diffraction with micro-beam synchrotron radiation was used to analyze microscopic stress evolved in coarse grains of a twinning-induced plasticity Fe-Mn-C steel under tensile loading. In addition, electron backscatter diffraction (EBSD) was used to determine the crystal orientation of grains in the polycrystalline Fe-Mn-C steel. Based on these orientation data, the stress and strain distribution in the microstructure of the steel under tensile loading was estimated using FEM simulation where the elastic anisotropy or the crystal orientation dependence of the elasticity was taken into account. The FEM simulation showed that the strain distribution in the microstructure depends on the crystal orientation of each grain. The stress analysis by the white X-ray diffraction indicated that the direction of the maximum principal stresses at measured points in the steel under tensile loading are mostly oriented toward the tensile direction. This is qualitatively consistent with the results of by the FEM simulation, although absolute values of the principal stresses may contain the effect of heterogeneous plastic deformation on the stress distribution.

Properties and Application of Undoped Hydrogenated Microcrystalline Silicon Thin Films

1989 ◽  
Vol 149 ◽  
Author(s):  
J. Kanicki ◽  
E. Hasan ◽  
D. F. Kotecki ◽  
T. Takamori ◽  
J. H. Griffith
Keyword(s):  
Grain Size ◽  
Deposition Temperature ◽  
Etch Rate ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Deposition Conditions

ABSTRACTDevice quality undoped hydrogenated microcrystalline silicon has been prepared by plasma enhanced chemical vapor deposition under different conditions. The dependence of physical, chemical, structural, and electrical properties on the deposition conditions has been investigated. Conductive (conductivity above 10−3Ω−1 cm−1) and resistive (conductivity around 10−9Ω−1cm−1) layers having approximately the same grain size, at a given substrate temperature, have been deposited between 200 and 500°C at two different hydrogen dilutions. Independently of the hydrogen dilution, the average grain sized is dependent on the deposition temperature and the film thickness; and a maximum average grain size of about 40 nm has been achieved for a thick film deposited at 500°C. The density of paramagnetic defects also increases with increasing deposition temperature, which indicates that more dangling bond defects are introduced as the total area of the grain boundaries increases. The etch rate decreases with increasing deposition temperature, and for the films deposited at 250 and 500°C the etch rate has been measured to be 6.6 and 2.7 nm/min, respectively. Thin film transistors incorporating a microcrystalline channel have been fabricated and evaluated. The best device had the following properties: field effect mobility, threshold voltage, and on/off current ratio of about 0.8 cm2/V sec, below 5 V, and around 106, respectively.

scholarly journals Vector analysis of ice-fabric data

1993 ◽  
Vol 39 (132) ◽  
pp. 292-302
Author(s):  
M.G. Ferrick ◽  
K.J. Claffey
Keyword(s):  
Crystal Orientation ◽  
Goodness Of Fit ◽  
Physical Distance ◽  
Uniaxial Crystal ◽  
Implicit Assumption ◽  
Orientation Data ◽  
Error Measure ◽  
Crystal Texture ◽  
Axis Alignment ◽  
Unit Vectors

Abstract The mechanical properties of ice are strongly affected by crystal texture and c-axis alignment. In this paper, we develop a general quantitative method for analysis of uniaxial crystal-orientation data. These data are represented as unit vectors from the origin with end points on the surface of a unit sphere. An orthogonal least-squares error measure is used to develop equations that define the closest plane and line through the data. The resulting eigenvalue problem is identical to that obtained by other investigators using different methods. However, here we identify an implicit assumption in the method, and observe that the error measure represents physical distance and quantifies the goodness of fit to the data of idealized structures. Also, a method is developed to transform the data and the results for viewing on Schmidt nets drawn in the best plane and the predominant basal plane of a sample, in addition to the standard xy-plane. Applications of the analysis to sea-ice samples include both numerical and Schmidt-net presentations of results.

Crystallographic Texture of MgO and its Effect on the Growth of BaTiO3 Thin Films by RF Sputtering

2007 ◽  
Vol 546-549 ◽  
pp. 2175-2178
Author(s):  
Liang Qiao ◽  
Xiao Fang Bi
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Crystallographic Texture ◽  
Great Influence ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
High Substrate Temperature ◽  
Argon Pressure ◽  
Structure And Microstructure ◽  
Deposition Conditions

In this work, MgO thin films were prepared by rf magnetron sputtering technique on two different substrates of Si (100) wafers and amorphous glasses. The influence of different deposition conditions such as substrate temperature, Ar pressure, film thicknesses on the crystal structure of MgO thin films were studied. BaTiO3 ferroelectric thin films were subsequently deposited on the MgO films. The XRD results showed that the orientation of MgO films was dependent greatly on the substrate temperature. A highly (100) oriented MgO thin films were obtained at the temperature of 800°C. The crystallographic texture has been deteriorated rapidly as the argon pressure decreased to 1.0 Pa. It has been also found that the film thickness has a great influence on the film orientation. High substrate temperature, high argon pressure and a certain thickness appear to be favorable for formation of a good texture for the MgO films. The structure and microstructure of the BaTiO3 films were various both with deposition conditions and with the crystallographic texture of the MgO. A highly (001) oriented ferroelectric BTO film was obtained on the MgO films with an optimized deposition conditions.

Microstructure and Texture in Copper Sheets after Reverse and Cross Rolling

2005 ◽  
Vol 105 ◽  
pp. 309-314 ◽  
Author(s):  
M. Ostafin ◽  
Jan Pospiech ◽  
Robert A. Schwarzer
Keyword(s):  
Grain Boundaries ◽  
Crystal Orientation ◽  
High Spatial Resolution ◽  
Rolling Direction ◽  
Orientation Measurement ◽  
Orientation Data ◽  
Cross Rolling ◽  
X Ray ◽  
Orientation Mapping ◽  
The Individual

The objectives of this investigation are structural effects in electrolytic copper sheets which are caused by the change of the direction of rolling. Unidirectional, reverse as well as cross-rolling at 90° respectively at 45° to the precedent rolling direction have been applied down to final deformations as low as 80% reduction in thickness. Texture has been determined by ACOM (Automated Crystal Orientation Measurement, “Automated EBSD”) in the SEM and by X-ray pole figure measurement. The main benefits of ACOM are a high spatial resolution which enables the investigation of texture gradients from the mid plane to the surface of the sheet, and the visualization of the microstructure by crystal orientation mapping. In addition to local texture, statistical distributions of misorientations across grain boundaries and of S grain boundaries have been derived from the individual grain orientation data. The change of the path of plastic deformation induces a destabilization of the substructure which is formed during the primary step of unidirectional rolling. A distinct change of texture is found depending on the deformation process. In cross rolling, the b fiber changes into the unstable b90 fiber which almost disappears with progressive deformation along the new rolling direction.

Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate Temperature

1991 ◽  
Vol 219 ◽  
Author(s):  
R. I. Johnson ◽  
G. B. Anderson ◽  
S. E. Ready ◽  
J. B. Boyce
Keyword(s):  
Energy Density ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Energy ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Average Grain Size ◽  
Substrate Temperatures

ABSTRACTLaser crystallization of a-Si thin films has been shown to produce materials with enhanced electrical properties and devices that are faster and capable of carrying higher currents. The quality of these polycrystalline films depends on a number of parameters such as laser energy density, shot density, substrate temperature, and the quality of the starting material. We find that the average grain size and transport properties of laser crystallized amorphous silicon films increase substantially with laser energy density, increase only slightly with laser shot density, and are unaffected by substrate temperatures of up to 400°C. The best films are those processed in vacuum but films of fair quality can also be obtained in air and nitrogen atmospheres.

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