Microstructural Observations of LPCVD Double Layer Polysilicon Thin Film Tensile Specimens

1997 ◽  
Vol 472 ◽  
Author(s):  
M. Legros ◽  
M. Kumar ◽  
S. Jayaraman ◽  
K. J. Hemker ◽  
W. N. Sharpe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Double Layer ◽  
Polycrystalline Silicon ◽  
Mechanical Performance ◽  
Testing Machine ◽  
Grain Morphology ◽  
Polycrystalline Films ◽  
Tensile Testing Machine ◽  
Plan View

ABSTRACTThe vast majority of micro electro-mechanical systems fabricated today depend on polycrystalline silicon thin films for structural support. Studies involving the mechanical performance of these thin films have progressed to the point where the elastic properties and tensile strength of the films can routinely be measured using a specially designed microsample tensile testing machine. However, a fundamental understanding to predict the mechanical behavior of the polycrystalline silicon films requires that these experimental measurements be complemented with detailed observations of the underlying thin film microstructure. This paper describes some of the plan view and cross-section transmission electron microscope observations that have been performed on different deposition runs of double layer polycrystalline films obtained from the Microelectronics Center of North Carolina. The emphasis has been placed on determining the flatness and dimensions of the polycrystalline films, grain morphology and distribution, texture, and dislocation substructure and microtwinning in the undeformed films.

A tensile testing machine for thin films

1972 ◽  
Vol 5 (12) ◽  
pp. 1231-1232 ◽  
Author(s):  
C A O Henning ◽  
F W Boswell ◽  
J M Corbett
Keyword(s):  
Thin Films ◽  
Tensile Testing ◽  
Testing Machine ◽  
Tensile Testing Machine

scholarly journals The Effect of Strontium Doping on LaFeO3 Thin Films Deposited by the PLD Method

Catalysts ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 954
Author(s):  
Anna Cyza ◽  
Łukasz Cieniek ◽  
Tomasz Moskalewicz ◽  
Wojciech Maziarz ◽  
Jan Kusiński ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Catalytic Properties ◽  
Pulsed Laser ◽  
Grain Morphology ◽  
Laser Deposition ◽  
Si Substrate ◽  
Tem Analysis ◽  
Small Grains

The aim of the presented investigations was to deposit the thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) on (100) Si substrate by using the Pulsed Laser Deposition (PLD) method. Structure was exanimated by using XRD, SEM, AFM, TEM and XPS methods. The catalytic properties were analyzed in 4 ppm acetone atmosphere. The doping of Sr thin films La1−xSrxFeO3 (x = 0, 0.1, 0.2) resulted in a decrease in the size of the crystallites, the volume of the elemental cell and change in the grain morphology. In the LaFeO3 and La0.9Sr0.1FeO3, clusters around which small grains grow are visible in the structure, while in the layer La0.8Sr0.2FeO3, the visible grains are elongated. The TEM analysis has shown that the obtained thin films had a thickness in the range 150–170 nm with triangular or flat column ends. The experiment performed in the presence of gases allowed us to conclude that the surfaces (101/020) in the triangle-shaped columns and the plane (121/200) faces in flat columns were exposed to gases. The best properties in the presence of CH3COCH3 gas were noted for LaFeO3 thin film with triangle columns ending with orientation (101/020).

scholarly journals In-plane stimulated emission of polycrystalline CH3NH3PbBr3 perovskite thin films

RSC Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 2703-2708
Author(s):  
Ju Wang ◽  
Wei Liu ◽  
Cuncun Wu ◽  
Ning Zhu ◽  
Congyue Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stimulated Emission ◽  
Polycrystalline Films ◽  
Large Crystal

MAPbBr3 perovskite thin film contains large crystal flakes, which support the in-plane stimulated emission and its propagation within these polycrystalline films. The emission scatters at the natural or artificial edge of the film.

Polycrystalline Silicon Thin Films on SiC Substrates for Solar Cells

2007 ◽  
Vol 280-283 ◽  
pp. 1147-1148 ◽  
Author(s):  
Hai Feng Li ◽  
Yong Huang ◽  
Zhi Jian Wan ◽  
Hou Xing Zhang ◽  
Li Ming Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Chemical Treatment ◽  
Polycrystalline Silicon ◽  
Crystal Size ◽  
Ultrasonic Method ◽  
Preferred Orientation ◽  
Silicon Thin Films ◽  
Columnar Grain

The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm×20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 µm and its preferred orientation is [111] after ZMR process.

scholarly journals Effect of Doped Glass Fibers on Tensile and Shear Strengths and Microstructure of the Modified Shotcrete Material: An Experimental Study and a Simplified 2D Model

Minerals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1053
Author(s):  
Cunli Zhu ◽  
Nan Zhou ◽  
Yaben Guo ◽  
Meng Li ◽  
Qiangqiang Cheng
Keyword(s):  
Fly Ash ◽  
Mechanical Performance ◽  
Glass Fibers ◽  
Testing Machine ◽  
Mechanical Analysis ◽  
Sand Fly ◽  
Tensile Testing Machine ◽  
Cross Sectional ◽  
Research Findings ◽  
Doped Glass

Shotcrete material has found extensive applications as a reinforcing material in the engineering sector. This study examined the effect of doped glass fibers on the mechanical performance of the modified shotcrete material composed of aeolian sand, fly ash, cement, quicklime, and doped glass fibers. Its tensile and shear strengths values were experimentally determined via a WAW-1000D computerized hydraulic universal tensile testing machine. Its microstructure was analyzed via a size analyzer, scanning electron microscope (SEM), and X-ray diffractometer (XRD). A 2D simplified mechanical model was elaborated to reflect the influence mechanism of the doped glass fibers on the mechanical performance of the modified shotcrete material. The experimental and mechanical analysis results indicated that, at the macroscopic scale, the experimental tensile and shear strengths of the shotcrete material doped with glass fibers were significantly higher than those of the undoped shotcrete material (by up to 310% and 596%, respectively). These results were in concert with the proposed model predictions, where the compound stresses in the shotcrete material were derived as the sum of the stress borne by the shotcrete material itself and the bridging stress exerted by the glass fibers. At the microscopic scale, SEM observations also revealed that the glass fibers were intertwined with each other and tightly enveloped by the shotcrete material particles within the modified shotcrete specimens, connecting the particles of different components into a whole and improving the overall mechanical strength. In addition, the relationships of the compound stress of the shotcrete material vs. embedment length, embedment angle, and cross-sectional area of the glass fibers were established. The research findings are considered instrumental in clarifying the mechanism by which the glass fibers influence the mechanical performance of shotcrete materials and optimize their solid waste (fly ash and quicklime) utilization.

Domain Structure of Epitaxial SrRuO3 Thin Films on (001) LaA1O3

1998 ◽  
Vol 4 (S2) ◽  
pp. 578-579
Author(s):  
J. C. Jiang ◽  
X.Q. Pan ◽  
Q. Gan ◽  
C. B. Eom
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Cross Section ◽  
Ion Milling ◽  
Plan View ◽  
Face To Face ◽  
Electrical And Magnetic Properties ◽  
Device Applications ◽  
Ferroelectric Capacitors

Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.

Study of the growth mechanism of highly in-plane aligned α-axis YBa2Cu3O7−x thin films on LaSrGaO4 substrate by high resolution electron microscopy

1996 ◽  
Vol 11 (12) ◽  
pp. 2951-2954 ◽  
Author(s):  
J. G. Wen ◽  
S. Mahajan ◽  
H. Ohtsuka ◽  
T. Morishita ◽  
N. Koshizuka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Oriented Film ◽  
Resolution Electron ◽  
Average Size

Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7—x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7—x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

Plan-View Preparation of TEM Specimens from Thin Films Using Adhesive Tape

2011 ◽  
Vol 17 (6) ◽  
pp. 886-888
Author(s):  
Zsolt Czigány
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Nanostructured Materials ◽  
Ion Beam ◽  
Adhesive Tape ◽  
Alloy Thin Film ◽  
Preparation Technique ◽  
Plan View ◽  
High Resolution Tem

AbstractA simple plan-view sample preparation technique for transmission electron microscopy (TEM) specimens is proposed for thin films by tearing-off the film with adhesive tape. The demand for very thin samples is highest for nanostructured materials where the structure of 2–5 nm sized features (grains) needs to be resolved; therefore, overlapping of nanometer-sized features should be avoided. The method provides thin areas at the fracture edges of plan-view specimens with thickness in the range of the grain size in the film allowing for artifact free high-resolution TEM imaging. Nanostructured materials typically fracture between the grains providing areas with the thickness of the grain size. Besides the swiftness of the method, the samples are free of surface amorphization artifacts, which can occur in ion beam milling up to 1 nm depth even at low energy ion bombardment. The thin film tear-off technique is demonstrated on a CuMn alloy thin film with grain size of 2 nm.

Low Temperature Poly-Si Layers Deposited by Hot Wire CVD Yielding a Mobility of 4.0 cm2V−1s−1 in Top Gate Thin Film Transistors

2000 ◽  
Vol 609 ◽  
Author(s):  
R.E.I. Schropp ◽  
J.K. Rath ◽  
B. Stannowski ◽  
C.H.M. Van Der Werf ◽  
Y. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Electron ◽  
Hot Wire ◽  
High Electron Mobility ◽  
Cvd Method ◽  
First Time

ABSTRACTDirect deposition of polycrystalline silicon (poly-Si) thin films by the Hot Wire CVD method has been used for the first time for the fabrication of poly-Si top gate Thin Film Transistors (TFTs). The TFTs have a high electron mobility in saturation of up to 4 cm2V−1s−1 as well as a remarkably large ON/OFF ratio of up to 6 × 105.

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