Epitaxial Relations in Fluoride Films Grown on GaAs{lll} and Ge(lll) Substrates

1985 ◽  
Vol 47 ◽  
Author(s):  
K. Tsutsui ◽  
H. Ishiwarya ◽  
T. Asano ◽  
S. Fijrukawa
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Type A ◽  
Matching Condition ◽  
Type B ◽  
Substrate Type ◽  
Lattice Matching ◽  
Lattice Constants ◽  
Ion Channeling ◽  
Transmission Electron

ABSTRACTEpitaxial relations in Cax Sr1−xF2(0⫶×⫶l) and BaF2 films grown on GaAs(111), (111) and Ge(111) substrates were investigated by He ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the fluoride films on GaAs prefered to have an orientation identical to that of the substrate (type A orientation), whereas the orientation of the films on Ge was mainly rotated by 180° about the surface normal 〈111〉 axis (type B orientation). A hypothesis is proposed that the epitaxial relations in these systems are affected by the ionicity of the substrate as well as the lattice matching condition.

scholarly journals The Examination of Calcium ion Implanted Alumina with Energy Filtered Transmission Electron Microscopy

1997 ◽  
Vol 3 (S2) ◽  
pp. 413-414
Author(s):  
E.M. Hunt ◽  
J.M. Hampikian ◽  
N.D. Evans
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pure Aluminum ◽  
Lattice Parameter ◽  
Face Centered Cubic ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Knoop Microhardness ◽  
Aluminum Nanocrystals ◽  
Face Centered

Ion implantation can be used to alter the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca+ to a fluence of 5 x 1016 ions/cm2. Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ≈7 - 8 nm in diameter as seen in Figure 1. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum (which is FCC with a lattice parameter of 0.404 nm) suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium.Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals.

Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

2021 ◽  
Vol 21 (4) ◽  
pp. 2538-2544
Author(s):  
Nguyen Minh Hieu ◽  
Nguyen Hoang Hai ◽  
Mai Anh Tuan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Mapping ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

Synthesis of NiSi2 by 6 MeV Ni implantation into silicon

1988 ◽  
Vol 3 (6) ◽  
pp. 1238-1246 ◽  
Author(s):  
J. K. N. Lindner ◽  
E. H. te Kaat
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Depth Distribution ◽  
Depth Profiling ◽  
Type A ◽  
High Dose ◽  
Metal Atoms ◽  
Transmission Electron ◽  
Defective Layer ◽  
Lattice Planes

Six MeV high-dose Ni implantation into silicon has been applied to synthesize deep-buried metallic layers. These layers have been analyzed by optical reflectivity and spreading resistance depth profiling as well as transmission electron microscopy and cross-section transmission electron microscopy. Already in the as-implanted state, at target temperatures of 450 K and doses above 1017 Ni/cm2, epitaxial precipitates of NiSi2 are formed. They grow in type-A and type-B orientations. In addition to these polyhedral crystallites, thin NiSi2 platelets on {111} lattice planes exist. At a dose of 1.3 × 1018 Ni/cm2, a continuous but highly defective layer of epitaxial NiSi2 is formed by coalescence of mainly type-A precipitates at the maximum of the Ni profile. Investigations indicate that damage gettering of nickel atoms as well as the atomic density increase during implantation influence the depth distribution of implanted metal atoms. Moreover, a suppression of silicon amorphization by nickel is evident.

Novel Cubic ZnxMg1−xO Epitaxial Heterostructures on Si (100) Substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
A. Kvit ◽  
J. Narayan ◽  
A.K. Sharma ◽  
C. Jin ◽  
J.F. Muth ◽  
...  
Keyword(s):  
System Integration ◽  
Buffer Layers ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Lattice Matching ◽  
Lattice Constants ◽  
Ion Channeling ◽  
Microelectronic Devices ◽  
Transmission Electron ◽  
Ultraviolet Range

ABSTRACTWe have synthesized new cubic phase of ZnxMg1−xO alloy, which can be grown epitaxially on MgO (100) by lattice-matching epitaxy, and on Si (100) substrate by our domainmatching epitaxy for integration with silicon microelectronic devices. Cubic ZnxMg1−xO films on MgO (100) and Si (100) substrates were grown using a rotating target in a single chamber “insitu” pulsed-laser deposition system. Integration of ZnxMg1−xO films with silicon was accomplished via titanium nitride (TiN) buffer layers where four lattice constants of TiN match with three of the silicon during epitaxial growth via domain epitaxy. Rutherford backscattering/ion channeling techniques were used to determine chemical composition and crystalline quality of the films for x = 0.0-0.18. Detailed X-ray diffraction and transmission electron microscopy studies confirmed the epitaxial nature of ZnMgO/MgO (100) and ZnMgO/TiN/Si (100) heterostructures, and showed the formation of the Mg2−xZnxTiO4 spinel at the interface with TiN. Using optical transmission measurements, the band gap of cubic Zn0.18Mg0.82O film was estimated to be approximately 6.7 eV. The potential use of these alloys for optical devices in the ultraviolet range is discussed.

scholarly journals Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium

1998 ◽  
Vol 537 ◽  
Author(s):  
W. R. Wampler ◽  
S. M. Myers
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gallium Nitride ◽  
Basal Plane ◽  
Large Fraction ◽  
Stacking Faults ◽  
Ion Channeling ◽  
Transmission Electron ◽  
High Concentrations

AbstractIon channeling and transmission electron microscopy were used to examine the microstructure of GaN implanted with deuterium (D) at high (>1 at. %) and low (< 0.1 at. %) D concentrations. At high concentrations, bubbles and basal-plane stacking faults were observed. Ion channeling showed the D was disordered relative to the GaN lattice, consistent with precipitation of D2 into bubbles. At low D concentrations, bubbles and stacking faults are absent and ion channeling shows that a large fraction of the D occupies sites near the center of the c-axis channel.

Coherent Precipitate Formation In Pulsed-Laser And Thermally-Annealed, Ion-Implanted Si.*

1982 ◽  
Vol 13 ◽  
Author(s):  
B. R. Appleton ◽  
J. Narayan ◽  
O. W. Holland ◽  
S. J. Pennycook
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Ion Scattering ◽  
Ion Channeling ◽  
Coherent Precipitate ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ion Implanted

AbstractIt Will be shown that under suitable conditions ion implanted impurities in Si can precipitate and grow coherently within the single crystal lattice during recrystallization induced by pulsed laser or thermal annealing. Ion channeling and transmission electron microscopy (Tem) were used to characterize such precipitates in Si implanted with Sb and B and thermally annealed, and in Si implanted with Tl and annealed with a pulsed ruby laser.The orientations of these precipitates were determined from TEM and detailed angular scans using ion scattering channeling.The nucleation and precipitation processes will be discussed in terms of differences in the liquid and solid phase regrowth mechanisms.

Crystallography of the Mg2Y precipitates in a damping Mg–Cu–Mn–Zn–Y alloy

2016 ◽  
Vol 49 (6) ◽  
pp. 2031-2035 ◽  
Author(s):  
Xuefei Huang ◽  
Weigang Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
Lattice Model ◽  
Coincidence Site Lattice ◽  
Reciprocal Space ◽  
The Novel ◽  
Site Lattice ◽  
Lattice Matching ◽  
Transmission Electron

The crystallography of the Mg2Y precipitates in an Mg–Cu–Mn–Zn–Y damping alloy has been characterized by transmission electron microscopy. The novel orientation relationship between Mg2Y and the α-Mg matrix was determined as [0001]p//[0001]α, 〈10{\overline 1}0〉p//〈2{\overline 1}{\overline 1}0〉αand 〈01{\overline 1}0〉p//〈11{\overline 2}0〉α. The precipitate exhibits a polygonal morphology with four pairs of facets, each of which is normal to a Δgvector in reciprocal space. The secondary constrained coincidence site lattice model was employed to examine the preference of each facet. The results show that a much better degree of lattice matching is realized across each facet than their vicinal orientations, indicating the energetically favoured feature of the interface. The configurations of the misfit-compensating dislocations across each interface were also calculated using the O-lattice model.

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