Microstructure of Massively Transformed γ-TiAl Phase Studied by High-Resolution Electron Microscopy

1996 ◽  
Vol 460 ◽  
Author(s):  
E. Abe ◽  
T. Kumagai ◽  
S. Kajiwara ◽  
M. Nakamura

ABSTRACTA microstructure of the massively transformed γ-TiAl (γm) phase in a Ti-48at.%Al alloy, which was heat treated in the high-temperature α-Ti (disordered hep) single phase field (1683K), followed by ice water quenching, has been examined using high-resolution electron microscopy. The characteristic features of the microstructure originated from the α→γ massive transformation have been clarified in detail, which are as follows. (1) Extremely thin hep plates (about 0.8–2nm in thickness), which are considered to be a retained α phase, are found to exist in the γm phase. (2) Twin boundaries are found to be not flat interfaces, that is, twin interfaces are not on the exact (111) mirror plane. This situation is attributed to the existence of a number of partial dislocations at the twin boundaries. (3) Antiphase relationship between the regions either side of the thin rotated domain wall [1] is confirmed. The validity of this situation is explained by assuming that the thin rotated domain wall has been grown from a simple antiphase domain boundary. On the basis of these facts, mechanism of the α→γ massive transformation has been discussed.

1995 ◽  
Vol 1 (6) ◽  
pp. 263-266
Author(s):  
D.S. Zhou ◽  
T.E. Mitchell

A 1/2[0001](0001) stacking fault and a planar 60° rotational domain boundary on the (0001) plane in as-grown CVD α-Si3N4 crystals have been characterized by high-resolution electron microscopy and image simulation. As reported previously, two types of coherent boundaries have been observed in this material, namely, stacking faults and rotational domain boundaries. The former involves only a translational displacement, while the latter separates two grains by a 60° rotation in addition to a translation. Inasmuch as the difference resulting from the rotational component can hardly be detected by high-resolution electron microscopy, care must be taken to analyze them first by analytical electron microscopy. In this paper, these two types of boundaries are studied and structural models are constructed that give simulated images in satisfactory agreement with observed images.


1991 ◽  
Vol 6 (4) ◽  
pp. 677-681 ◽  
Author(s):  
G. Van Tendeloo ◽  
M-O. Ruault ◽  
H. Bernas ◽  
M. Gasgnier

GdBa2Cu3O7 crystals were irradiated at room temperature with 200 keV Ne ions and 300 keV Xe ions. In situ standard TEM and further HREM studies show two types of extended defects: (i) mobile extended defects, which account for the preferential defect pinning to twin boundaries reported earlier. These defects are rapidly recovered and difficult to observe by HREM investigations; (ii) stable amorphous areas which are clearly identified by HREM observations. Their overlapping and aggregation conceivably lead to amorphization of the sample.


1987 ◽  
Vol 64 (4) ◽  
pp. 517-520 ◽  
Author(s):  
E.A. Hewat ◽  
M. Dupuy ◽  
A. Bourret ◽  
J.J. Capponi ◽  
M. Marezio

1995 ◽  
Vol 400 ◽  
Author(s):  
E. Abe ◽  
T. Kumagai ◽  
M. Nakamura

AbstractAn extremely fine lamellar structure formed in a Ti-48at.%Al alloy, which was heat treated in the high-temperature α-Ti (disordered hcp) single phase field (1683K), followed by ice water quenching, has been examined by high-resolution and analytical transmission electron microscopy. The microstracture consists of thin plates of ordered α2-Ti3Al (D019: ordered version of hcp) and γ-TiAl (Ll0: ordered version of fcc) phases, and interfaces of lamellae are atomically flat in a wide range. From detailed analyses of the microstructure and composition in nm scale, the α→γ phase transformation, which occurs during quenching and produces the extremely fine α2-γ lamellae, has been discussed.


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