Optically Detected Magnetic Resonance of Copper Doped Gallium Phosphide

1985 ◽  
Vol 46 ◽  
Author(s):  
Haflidi P. Gislason ◽  
George D. Watkins

AbstractA deep photoluminescence (PL) band peaking at 1.08 eV in Cu-doped GaP has been studied by means of optically detected magnetic resonance (ODMR). We report an intense S=l ODMR spectrum arising from this PL band. The signal is strongly anisotropic and consistent with a center of triclinic symmetry. Some of the ODMR transitions show a well resolved hyperfine structure in agreement with the nuclear spin I=3/2 of Cu, thus suggesting the presence of Cu in the defect.

1989 ◽  
Vol 163 ◽  
Author(s):  
K. L. Brower

AbstractAn isotropic optically detected magnetic resonance (ODMR) having a Lorentzian lineshape at g - 2.050 ± 0.003 and linewidth (FWHM) of 67.3 mT is observed in GaP doped with 6 - 9 × 1017 S/cm3. The ODMR at g - 2.050 is believed to arise from free electrons (or holes) in the conduction (valence) band. This ODMR is completely quenched due to non-radiative recombination in the vicinity of g - 1.99.


1997 ◽  
Vol 102 (10) ◽  
pp. 715-720 ◽  
Author(s):  
M. Schreiner ◽  
H. Pascher ◽  
G. Denninger ◽  
S.A. Studenikin ◽  
G. Weimann ◽  
...  

2006 ◽  
Vol 38 ◽  
pp. 167-170 ◽  
Author(s):  
Gennady P Berman ◽  
Alan R Bishop ◽  
Boris M Chernobrod ◽  
Marilyn E Hawley ◽  
Geoffrey W Brown ◽  
...  

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.


Author(s):  
M. M. Glazov

This chapter is devoted to one of key phenomena in the field of spin physics, namely, resonant absorption of electromagnetic waves under conditions where the Zeeman splitting of spin levels in magnetic field is equal to photon energy. This method is particularly important for identification of nuclear spin effects, because resonance spectra provide fingerprints of different involved spin species and make it possible to distinguish different nuclear isotopes. As discussed in this chapter the nuclear magnetic resonance provides also an access to local magnetic fields acting on nuclear spins. These fields are caused by the magnetic interactions between the nuclei and by the quadrupole splittings of nuclear spin states in anisotropic crystalline environment. Manifestations of spin resonance in optical responses of semiconductors–that is, optically detected magnetic resonance–are discussed.


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