The Effect Of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon

1985 ◽  
Vol 46 ◽  
Author(s):  
M. Stavola ◽  
K. M. Lee ◽  
J. C. Nabity ◽  
P. E. Freeland ◽  
L. C. Kimerling
Keyword(s):  
Wave Function ◽  
Infrared Absorption ◽  
Ground State ◽  
Infrared Absorption Spectrum ◽  
Uniaxial Stress ◽  
Single Pair ◽  
Absorption Bands ◽  
Oxygen Donor ◽  
Infrared Absorption Bands ◽  
Neutral Charge State

ABSTRACT:We have investigated the effect of stress upon the infrared absorption spectrum of the neutral charge state of the oxygen donor in silicon. Our results show that the central cell of the donor has C2ν, symmetry and that this anisotropy gives rise to a ground state wave function that is constructed from a single pair of conduction band valleys.

The Electronic Structure and Atomic Symmetry of The Oxygen Donor in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Michael Stavola ◽  
Keon M. Lee
Keyword(s):  
Wave Function ◽  
Effective Mass ◽  
Conduction Band ◽  
Ground State ◽  
Polarized Light ◽  
Uniaxial Stress ◽  
Single Pair ◽  
State Wave ◽  
Oxygen Donor ◽  
Charge States

ABSTRACTThe infrared spectrum of oxygen donor complexes in silicon under uniaxial stress has been examined for the neutral and singly ionized charge states. Our results are consistent with an effective mass-like ground state wave function that is constructed from a single pair of conduction band valleys for both charge states. A thermal ionization experiment in which the stress split components of the ground state are monitored by the absorption of polarized light confirm this interpretation and provide correlation with DLTS and EPR results. Additional small splittings, due to deviations from effective mass theory, show that the electronic wave function of the oxygen donor is distorted by an extended “central cell” with C2v symmetry. Previously observed splittings of 1s → np± transitions for the singly ionized charge state at zero stress are interpreted in terms of the effect of the anisotropic oxygen donor structure upon excited state wave functions constructed from the single pair of conduction band valleys

Ground state constants A 0, D K 0 and H K 0 of 13CH3I from normally allowed infrared absorption bands

1996 ◽  
Vol 87 (2) ◽  
pp. 523-527
Author(s):  
J. Pietilä ◽  
M. Koivusaari ◽  
S. Alanko ◽  
R. Anttila
Keyword(s):  
Infrared Absorption ◽  
Ground State ◽  
Absorption Bands ◽  
Infrared Absorption Bands

Quantitative interpretation of infrared absorption bands from hexagonal, cubic and mixed boron nitride films

1998 ◽  
Vol 7 (11-12) ◽  
pp. 1657-1662 ◽  
Author(s):  
M.A. Djouadi ◽  
S. Ilias ◽  
D. Bouchier ◽  
J. Pascallon ◽  
G. Sené ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Infrared Absorption ◽  
Quantitative Interpretation ◽  
Absorption Bands ◽  
Boron Nitride Films ◽  
Infrared Absorption Bands

New infrared absorption bands of cesium vapor

1980 ◽  
Vol 72 (4) ◽  
pp. 2356-2363 ◽  
Author(s):  
E. Zouboulis ◽  
N. D. Bhaskar ◽  
A. Vasilakis ◽  
W. Happer
Keyword(s):  
Infrared Absorption ◽  
Cesium Vapor ◽  
Absorption Bands ◽  
Infrared Absorption Bands
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