Links Between the Interface Plane Scheme and Grain Boundary Properties

1996 ◽  
Vol 458 ◽  
Author(s):  
Valerie Randle

ABSTRACTThis paper describes the current experimental knowledge base concerning the geometry and property relationships at the gram boundary plane. In order to analyse the data the interface-plane scheme is used, and its application is described here. The most important points to emerge from the data are that particular boundary properties - energy, mobility, segregation, precipitation and cracking - correlate with boundary plane types. Recent data illustrating the high occurrence of asymmetrical tilt grain boundaries and importance of low-index grain boundary planes are discussed in more detail.

1993 ◽  
Vol 20 (1-4) ◽  
pp. 231-242 ◽  
Author(s):  
Valerie Randle

This paper discusses how microtexture data, i.e. individual orientations which are measured on a grain and environmentally specific basis, are applied to grain boundary geometrical parameters. Three main areas are addressed: the “interface-plane” scheme for specifying the five degress of freedom of a boundary, comparisons of experimental techniques for data collection, and representation of grain boundary misorientations in Rodrigues-Frank space. Particular attention is paid to electron back-scatter diffraction as a method of probing grain boundary misorientation and the crystallographic orientation of the grain boundary plane.


2012 ◽  
Vol 715-716 ◽  
pp. 179-179
Author(s):  
David L. Olmsted ◽  
Elizabeth A. Holm ◽  
Stephen M. Foiles

Grain boundary properties depend on both composition and structure. To test the relative contributions of composition and structure to the grain boundary energy, we calculated the energy of 388 grain boundaries in four elemental, fcc metals: Ni, Al, Au and Cu. We constructed atomic-scale bicrystals of each boundary and subjected them to a rigorous energy minimization process to determine the lowest energy structure. Typically, several thousand boundary configurations were examined for each boundary in each element.


2005 ◽  
Vol 482 ◽  
pp. 63-70 ◽  
Author(s):  
Václav Paidar ◽  
Pavel Lejček

Grain boundaries are decisive for many properties of materials. Due to short-range stress field their influence is primarily based on their atomic structure. Special character of grain boundary properties related to their structure, follows from the nature of atomic arrangements in the boundary cores, from the interfacial dislocation content and from the boundary mobility. All those aspects of boundary behaviour are strongly influenced by the boundary chemistry including various segregation phenomena. Approaches to the boundary classification and the interpretation of recent experimental results are discussed in the context of the complex relationship between microstructure and material properties. Such findings are essential for Grain Boundary Engineering proposed to improve the performance of polycrystalline materials.


Author(s):  
Thiebaud Richeton

Non-uniform grain boundary sliding can induce strain and rotation incompatibilities at perfectly planar interfaces. Explicit analytic expressions of stress and lattice rotation jumps are thus derived at a planar interface in the general framework of heterogeneous anisotropic thermo-elasticity with plasticity and grain boundary sliding. Both elastic fields are directly dependent on in-plane gradients of grain boundary sliding. It is also shown that grain boundary sliding is a mechanism that may relax incompatibility stresses of elastic, plastic and thermal origin although the latter are not resolved on the grain boundary plane. This relaxation may be a driving force for grain boundary sliding in addition to the traditionally considered local shears on the grain boundary plane. Moreover, the obtained analytic expressions are checked by different kinds of bicrystal shearing finite element simulations allowing grain boundary sliding and where a pinned line in the interface plane aims at representing the effect of a triple junction. A very good agreement is found between the analytic solutions and the finite element results. The performed simulations particularly emphasize the role of grain boundary sliding as a possible strong stress generator around the grain boundary close to the triple line because of the presence of pronounced gradients of sliding.


1998 ◽  
Vol 4 (S2) ◽  
pp. 764-765
Author(s):  
David N. Seidman ◽  
John D. Rittner ◽  
Dmitry Udler

Solute-atom segregation to grain boundaries has been of interest since the 1930's when it was realized that some steels were susceptible to failure by intergranular fracture when certain impurities were present. Segregation of impurities or intentionally added alloying elements at grain boundaries can greatly affect various grain boundary properties, which in turn affect numerous macroscopic properties. Materials phenomena that have been linked to grain boundary segregation include temper brittleness, fatigue strength, adhesion, precipitation, diffusional creep, intergranular corrosion, and grain boundary diffusivity. Although grain boundary segregation has been extensively studied for many years, the effects of different grain boundary structures on segregation was generally not considered. It has been established both experimentally and theoretically that the level of segregation varies from grain boundary to grain boundary in the same alloy, but there is little direct information on how grain boundary structure influences segregation.


Author(s):  
F. Cosandey ◽  
Y. Komem ◽  
C. L. Bauer

Energy and concomitant structure of grain boundaries are related to inclination of the boundary plane as well as misorientation of grains defining the boundary. Although increasing information is becoming available on variation of grain boundary energy with misorientation, still relatively little is known about variation of grain boundary energy with inclination. The purpose of this research is to examine preferred inclinations of preselected grain boundaries in gold by transmission electron microscopy (TEM) in order to identify principal structural elements and to relate these elements to the energy of special grain boundary configurations.Grain boundaries examined in this research are produced by a new technique involving vapor deposition of gold on common (001) surfaces of bicrystalline substrates of NaCl, characterized by preselected rotation about a common [001] axis, and subsequent epitaxial growth to form a bicrystalline thin film. These films are then removed from their substrates and examined by TEM. The principal advantage of this technique is that the grain boundary is formed during the deposition and growth process, thus resulting in a more perfect boundary structure while eliminating necessity of a separate bonding operation.


Author(s):  
H. FÖll ◽  
D.G. Ast

In contrast to grain boundaries in metals, little is known about the structure and the properties of grain boundaries in covalent crystals, especially in semiconductors. The reason for this lack of knowledge is that grain-boundary-free crystals of, e.g., silicon, are easy to grow; commercially used silicon crystals are free of dislocations and thus nearly perfect. It was not until after the use of polycrystalline silicon had been proposed for the large scale production of cheap solar cells that grain-boundary properties in silicon gained considerable interest. In particular their electronic properties and their influence on device performance is important in this case. Moreover, “grain boundary devices”, i.e., devices with a grain boundary as the active element and with rather interesting properties, are conceivable - provided the relationship between the grain boundary structure and their electronic behaviour can be understood (cf. /l/). In addition, the study of grain boundaries in silicon, with an electronic structure and a binding configuration very different from metals, may provide a valuable tool to test competing grain boundary models (see, e.g., /2,3/) and may lead to a deeper insight into the crystal parameters governing the grain boundary properties.


Author(s):  
Stuart McKernan ◽  
C. Barry Carter

The modeling of tilt grain boundaries in terms of repeating structural units of varying separation is now a well established concept. High-resolution electron microscope (HREM) images of different tilt grain boundaries in many materials display a qualitative similarity of atomic configurations of the grain boundary structure. These boundaries are frequently described in terms of characteristic structural units, which may be separated from each other by regions of ‘perfect’ crystal (as, for example, in low-angle grain boundaries), or may be contiguous, forming ordered arrays of the structural units along the boundary. In general there will be a different arrangement of the structural units or an arrangement of different structural units, according to the precise geometry of the particular grain boundary. The structure of some special grain boundaries has been examined and these are found to exist in several different configurations, depending on the orientation of the grain boundary plane among other parameters. Symmetry-related symmetric tilt grain boundaries and asymmetric tilt grain boundaries with one grain having a prominent, low-index facet, are commonly observed, low-energy configurations. Structural multiplicity of these configurations along the same grain boundary has been observed in some systems. Defects in the perfect ordering of the structural units may be caused by deviations of the grain boundary plane away from the perfect tilt orientation. Deviations of grain boundary structure away from the exact orientation will also produce defects in the repeating structural unit configuration. These deviations may have a regular and well-defined structure, producing a more complex structural unit.


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