The Preparation of Kinetically Stable Crystalline Compounds from Modulated Elemental Reactants

1996 ◽  
Vol 453 ◽  
Author(s):  
Marc D. Hornbostel ◽  
Myungkeun Noh ◽  
Christopher D. Johnson ◽  
David C. Johnson

AbstractDiffusion distances within elementally modulated reactants can be controlled on an Angstrom length scale. Below a critical repeat thickness, elementally modulated reactants interdiffuse without nucleating crystalline compounds. Using this amorphous intermediate, we can prepare metastable compounds by controlling nucleation: Above this critical repeat thickness, crystalline compounds nucleate at the reacting interfaces. Using the architecture of the initial reactant to control the diffusion distances in the initial reactant, we have found that we can prepare crystalline superlattices. Crystalline superlattice compounds containing integral numbers of inter grown transition metal dichalcogenide layers and alternating layers of transition metal carbides have been prepared through controlled crystallization of superlattice reactants with designed compositional modulation. High quality c-axis oriented dichalcogenide crystalline superlattices result from extended annealing at relatively low temperatures. A large number of [00l] diffraction orders and off-axis [10l] diffraction peaks are observed indicating that these compounds are crystalline in three dimensions. Similar annealing conditions were used to prepare carbide superlattices, however the limited low temperature diffusion rates of the carbides limit the crystallite size to approximately 300Å. The rational synthesis of these intergrowth compounds from superlattice reactants permits the exploratory synthesis of a new class of compounds and the tailoring of physical properties as a function of compositional layer thicknesses and native properties of the parent compounds.

2005 ◽  
Vol 886 ◽  
Author(s):  
Mary Smeller ◽  
Fred R. Harris ◽  
David C. Johnson

ABSTRACTThe synthesis of (Bi2Te3)x(TiTe2)x and (Bi2Te3)x(TiTe2)3 superlattices using modulated elemental reactants was successfully accomplished. This required the calibration of the deposition parameters to achieve both the desired atomic compositions of the constituent layers and the deposition of the absolute amounts of each of the components to yield the title compounds. Proper annealing conditions were determined from an investigation of the x-ray diffraction patterns of a superlattice sample as a function of annealing temperature. The change in lattice parameters as a function of x showed the expected linear behavior with slopes consistent with values expected from the published lattice parameters of the binary components. Rietveld refinement showed that the characteristic structure of the binary components is maintained in the superlattices studied.


1998 ◽  
Vol 547 ◽  
Author(s):  
Joshua R. Williams ◽  
Joanna Hass ◽  
Heike Sellinschegg ◽  
David C. Johnson

AbstractThe synthesis of many targeted ternary compounds using conventional synthesis approaches has been unsuccessful because the ternary compounds are thermodynamically unstable with respect to disproportionation to a mixture of binary compounds. Typically these compounds have been synthetic targets based on predictions of enhanced properties. The ternary skutterudites with formula M'xM4Sbl2 (where M' = La, Lu, Y) are prime examples. Compounds with this structure have been found to be very promising thermoelectric materials having both good electrical properties and low thermal conductivities. Inserting heavy M' atoms into this crystal structure has been predicted to further decrease the thermal conductivity by increased phonon scattering. Attempts to make the title compound using conventional synthesis approaches failed due the formation of binary compounds as reaction products. Using modulated elemental reactants we were able to prepare the title compound at 160°C. Annealing at temperatures above 500°C resulted in exothermic decomposition into binary compounds. The Bi containing compounds are therefore thermodynamically unstable with respect to disproportionation at all temperatures. The amount of Bi can be varied by varying the composition of the starting modulated elemental reactant. Preliminary measurements to determine the variation of electrical conductivity and Seebeck coefficient as a function of bismuth content are presented.


Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3341-3354
Author(s):  
Seung-Young Seo ◽  
Dong-Hwan Yang ◽  
Gunho Moon ◽  
Odongo F. N. Okello ◽  
Min Yeong Park ◽  
...  

2021 ◽  
Vol 3 (1) ◽  
pp. 272-278
Author(s):  
Pilar G. Vianna ◽  
Aline dos S. Almeida ◽  
Rodrigo M. Gerosa ◽  
Dario A. Bahamon ◽  
Christiano J. S. de Matos

The scheme illustrates a monolayer transition-metal dichalcogenide on an epsilon-near-zero substrate. The substrate near-zero dielectric constant is used as the enhancement mechanism to maximize the SHG nonlinear effect on monolayer 2D materials.


2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  

2021 ◽  
Vol 103 (17) ◽  
Author(s):  
Yihao Wang ◽  
Changzheng Xie ◽  
Junbo Li ◽  
Zan Du ◽  
Liang Cao ◽  
...  

2020 ◽  
Vol 102 (23) ◽  
Author(s):  
Tianle Wang ◽  
Nick Bultinck ◽  
Michael P. Zaletel

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Daniil Marinov ◽  
Jean-François de Marneffe ◽  
Quentin Smets ◽  
Goutham Arutchelvan ◽  
Kristof M. Bal ◽  
...  

AbstractThe cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H2 plasma to clean the surface of monolayer WS2 grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS2 in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H2S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS2 devices can be maintained by the combination of H2 plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H2 and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.


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