A Theoretical and Experimental Study of the Chemical Bonding in AgGaS2
Keyword(s):
X Ray
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AbstractAgGaS2 is a technologically important semiconductor for its large birefringence coefficient. In this work we compare the theoretical ab-initio all-electron FLAPW results with very refined experimental data obtained with accurate X-ray analysis. In particular we focus our attention to the electronic distribution along the significative bonding directions connecting the three different atoms. Furthermore, the charge density contours around Ag provide a clear evidence of the contribution of its d orbitals to the chemical bond.
1993 ◽
Vol 49
(s1)
◽
pp. c380-c380
2002 ◽
Vol 106
(35)
◽
pp. 8109-8116
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Keyword(s):