Electroluminescence Device Perspectives of Si+-Implanted SiO2
Keyword(s):
AbstractThermal oxide layers on Si which have been implanted with Si conduct electrical current and emit light. The electroluminescence effect (EL) has an efficiency which is comparable to the best values that have been reported for the porous Si based devices. Generally, the EL spectrum differs substantially from the photoexcited luminescence. It is linked with that excited by external high energy electrons in cathodoluminescence (CL) experiments. We suggest to consider the effect as internal CL. Based on studies of transport and EL characteristic we evaluate the possibilities of an electroluminescent device based on such layers.
1979 ◽
Vol 26
(6)
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pp. 5101-5106
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1955 ◽
Vol 46
(373)
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pp. 164-176
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2021 ◽
Vol 494-495
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pp. 29-33