Transient Photocurrent Response of Dye-Sensitized Porous Nanocrys1Alline TiO2 Electrodes

1996 ◽  
Vol 452 ◽  
Author(s):  
Albert Goossens ◽  
G. K. Boschloo ◽  
J. Schoonman
Keyword(s):  
Electron Trap ◽  
Photocurrent Response ◽  
Time Resolved ◽  
Oxide Semiconductors ◽  
Dye Sensitized ◽  
Transient Photocurrent ◽  
Photocurrent Spectroscopy ◽  
Electron Migration ◽  
Intensity Modulated Photocurrent Spectroscopy ◽  
Nanostructured Metal

AbstractIn order to investigate the fundamentals of electron migration in nanostructured metal-oxide semiconductors, the transient photocurrent response of dye-sensitized porous nanocrystalline TiO2 is studied. The time-resolved photocurrent response at light steps or pulses shows a faster transient upon increasing the light intensity. Intensity-modulated photocurrent spectroscopy (IMPS) reveals that the transient photocurrent is dominated by two time constants, i.e. the geometrical one and a characteristic time related to electron trapping. A theoretical model is derived in which the occupation dynamics of a single electron trap is considered using Shockley-Read-Hall kinetics. The geometrical RC time of the electrode is also included. Excellent agreement between this model and the measured IMPS spectra is obtained.

scholarly journals The Photoelectrochemistry of Assemblies of Semiconductor Nanoparticles at Interfaces

2018 ◽  
Vol 232 (9-11) ◽  
pp. 1567-1582 ◽  
Author(s):  
Stephen G. Hickey
Keyword(s):  
Photocurrent Response ◽  
Short Discussion ◽  
Intensity Modulated ◽  
Transient Photocurrent ◽  
Photocurrent Spectroscopy ◽  
Basic Set ◽  
Optically Transparent ◽  
Photoactive Materials ◽  
Intensity Modulated Photocurrent Spectroscopy ◽  
Optically Transparent Electrodes

Abstract The application of photoelectrochemical methods presents the researcher with a powerful set of versatile tools by which photoactive materials, such as semiconductor quantum dots, at conductive interfaces may be interrogated. While the range of photoelectrochemical techniques available is quite large, it is surprising that very few have found their way into common usage within the nanoparticle community. Here a number of photoelectrochemical techniques and the principles upon which they are based are introduced. A short discussion on the criticality of ensuring the nanoparticles are reliably anchored to the substrate is followed by an introduction to the basic set of equipment required in order to enable the investigator to undertake such experiments. Subsequently the four techniques of transient photocurrent response to square wave illumination, photocurrent spectroscopy, intensity modulated photocurrent spectroscopy and intensity modulated photovoltage spectroscopy are introduced. Finally, the information that can be acquired using such techniques is provided with emphasis being placed on a number of case studies exemplifying the application of photoelectrochemical techniques to nanoparticles at interfaces, in particular optically transparent electrodes.

Transient Photocurrent Spectroscopy of Trap Levels in Ultra-Thin SiO2 Films

1996 ◽  
Vol 428 ◽  
Author(s):  
Y. Miura ◽  
S. Fujieda
Keyword(s):  
Cross Section ◽  
Monochromatic Light ◽  
Electron Trap ◽  
External Circuit ◽  
Broad Distribution ◽  
Transient Photocurrent ◽  
Photocurrent Spectroscopy ◽  
Optical Cross Section ◽  
Tunneling Injection ◽  
Trap Levels

AbstractStress-induced trap levels near Si/SiO2 interfaces for MOS diodes with 10 imi-thick oxides are investigated by measuring the transient photocurrent, which depends on the incident photon energy. The electron trap levels are filled by tunneling injection, and the electrons are depopulated by monochromatic light irradiation. The transient photocurrent, which is measured as an external circuit current, decays exponentially with time. Based on a proposed detrapping model, the optical cross section is estimated to be about 1×10−17 cm2 for hv=2−3 eV. The obtained photo-accessible trap density has a broad distribution at around hv=2.5 eV.

Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1274-1277 ◽  
Author(s):  
Yoshinao Miura ◽  
Kouichi Hamada ◽  
Tomohisa Kitano ◽  
Atsushi Ogura
Keyword(s):  
Electron Trap ◽  
Transient Photocurrent ◽  
Photocurrent Spectroscopy ◽  
Trap Levels

Photophysical properties of N719 and Z907 dyes, benchmark sensitizers for dye-sensitized solar cells, at room and low temperature

2021 ◽  
Vol 23 (10) ◽  
pp. 6182-6189
Author(s):  
Dariusz M. Niedzwiedzki
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Optical Spectroscopy ◽  
Room Temperature ◽  
Photophysical Properties ◽  
Dye Sensitized Solar Cells ◽  
Time Resolved ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Photophysical properties of N719 and Z907, benchmark Ru-dyes used as sensitizers in dye-sensitized solar cells, were studied by static and time-resolved optical spectroscopy at room temperature and 160 K.

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