STM Studies of Electrode/Electrolyte Interfaces and Silicon Surface Reactions in Controlled Atmospheres

1996 ◽  
Vol 451 ◽  
Author(s):  
Christopher P. Wade ◽  
Huihong Luo ◽  
William L. Dunbar ◽  
Matthew R. Linford ◽  
Christopher E.D. Chidsey

ABSTRACTWe have assembled a scanning tunneling microscope with an inverted sample that allows the sample surface to be contacted by fluid electrolytes in a controlled atmosphere. A hanging meniscus is formed between the sample and a small cup surrounding the tunneling tip. In-situ imaging of the electrode/electrolyte interface is conveniently achieved with clean samples under potentiostatic control. The functioning of the microscope is illustrated by the imaging of the electrodeposition of copper on gold. This microscope has been used to image hydrogen-terminated silicon surfaces and to demonstrate that islands, tentatively assigned as silicon oxide, are formed on rinsing in water but can be avoided if the surface is not rinsed on withdrawal from the ammonium fluoride etching solution. Finally, STM shows that the convenient, gas-phase photochlorination of H-Si(111) produces the simple Cl-Si(111)(1×1) structure with little or no etching of the silicon surface.

1995 ◽  
Vol 380 ◽  
Author(s):  
Craig T. Salling

ABSTRACTThe ability to create atomic-scale structures with the scanning tunneling microscope (STM) plays an important role in the development of a future nanoscale technology. I briefly review the various modes of STM-based fabrication and atomic manipulation. I focus on using a UHV-STM to directly pattern the Si(001) surface by atomic manipulation at room temperature. By carefully adjusting the tip morphology and pulse voltage, a single atomic layer can be removed from the sample surface to define features one atom deep. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Trenches ∼3 nm wide and 2–3 atomic layers deep can be created with less stringent control of patterning parameters. Direct patterning provides a straightforward route to the fabrication of nanoscale test structures under UHV conditions of cleanliness.


2019 ◽  
Vol 196 ◽  
pp. 180-185
Author(s):  
Syu-You Guan ◽  
Hsien-Shun Liao ◽  
Bo-Jing Juang ◽  
Shu-Cheng Chin ◽  
Tien-Ming Chuang ◽  
...  

1989 ◽  
Vol 54 (5) ◽  
pp. 427-429 ◽  
Author(s):  
Ichiro Tanaka ◽  
Fukunobu Osaka ◽  
Takashi Kato ◽  
Yoshifumi Katayama ◽  
Shin‐ichi Muramatsu ◽  
...  

2003 ◽  
Vol 10 (06) ◽  
pp. 963-980 ◽  
Author(s):  
SHUJI HASEGAWA ◽  
ICHIRO SHIRAKI ◽  
FUHITO TANABE ◽  
REI HOBARA ◽  
TAIZO KANAGAWA ◽  
...  

For in-situ measurements of the local electrical conductivity of well-defined crystal surfaces in ultrahigh vacuum, we have developed two kinds of microscopic four-point probe methods. One involves a "four-tip STM prober," in which four independently driven tips of a scanning tunneling microscope (STM) are used for measurements of four-point probe conductivity. The probe spacing can be changed from 500 nm to 1 mm. The other method involves monolithic micro-four-point probes, fabricated on silicon chips, whose probe spacing is fixed around several μm. These probes are installed in scanning-electron-microscopy/electron-diffraction chambers, in which the structures of sample surfaces and probe positions are observed in situ. The probes can be positioned precisely on aimed areas on the sample with the aid of piezoactuators. By the use of these machines, the surface sensitivity in conductivity measurements has been greatly enhanced compared with the macroscopic four-point probe method. Then the conduction through the topmost atomic layers (surface-state conductivity) and the influence of atomic steps on conductivity can be directly measured.


2015 ◽  
Vol 86 (9) ◽  
pp. 093707 ◽  
Author(s):  
Jungdae Kim ◽  
Hyoungdo Nam ◽  
Shengyong Qin ◽  
Sang-ui Kim ◽  
Allan Schroeder ◽  
...  

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