Raman Scattering Study of H2O2-Etched Zn0.1Cd0.9Te Surfaces
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ABSTRACTRaman study of as-grown and H2O2-etched surfaces of Zn0.1Cd0.9 Te single crystal has been performed. A distribution of Te precipitates on the surface of as-grown ZCT, which increases after etching, has been encountered. With high irradiation powers, due to the oxidation of the surfaces, new bands of TeO32− are evolved. A downward shift in the peak position, as well as a halfwidth broadening, of all Raman modes has been observed with increasing laser power. The phenomenon, due to the formation of insulating oxide of tellurium in a dispersion of Te precipitates and vice-versa, has been attributed to the quantum confinement of phonons.
2015 ◽
Vol 99
(1)
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pp. 332-339
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1981 ◽
Vol 42
(C6)
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pp. C6-430-C6-432
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