Initial Growth Stage of AlGaN Grown Directly on (0001) 6H-SiC by MOVPE

1996 ◽  
Vol 449 ◽  
Author(s):  
K. Horino ◽  
A. Kuramata ◽  
T. Tanahashi
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Growth Process ◽  
Growth Stage ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Initial Growth ◽  
Rich Region ◽  
X Ray ◽  
Edx Analysis ◽  
Initial Growth Stage

ABSTRACTWe investigated the growth process of AlGaN films grown directly on 6H-SiC (0001) substrates by metalorganic vapor phase epitaxy (MOVPE). We focused on the initial growth stage to clarify the mechanism of nitride growth on SiC. From Energy Dispersive X-ray (EDX) analysis we found that an Al-rich region generated naturally at the AlGaN/SiC interface. We also found that Al flux determined the density of grain which generated during the initial growth stage, and this grain density reflected the surface morphology.

The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

1996 ◽  
Vol 449 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Masaya Shimizu ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Mole Fraction ◽  
Vapor Phase ◽  
Growth Stage ◽  
Lattice Mismatch ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Epitaxial Layers ◽  
Initial Growth ◽  
Initial Growth Stage

ABSTRACTInGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and ‘the composition pulling effect’ at the initial growth stage of InGaN has been studied in relation to the lattice mismatch between InGaN and the bottom epitaxial layers. Crystalline quality of InGaN is good near the interface of InGaN/GaN and the composition of InGaN is close to that of GaN. With increasing growth thickness, the crystalline quality becomes worse and the indium mole fraction is increased. The composition pulling effect becomes stronger with increasing lattice mismatch.

Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in situ synchrotron X-ray diffraction

2020 ◽  
Vol 13 (5) ◽  
pp. 055501 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Fumitaro Ishikawa ◽  
Takuo Sasaki ◽  
Masamitu Takahasi
Keyword(s):  
Growth Stage ◽  
Initial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Initial Growth Stage ◽  
Strain Evolution

Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography

2020 ◽  
Vol 98 (6) ◽  
pp. 125-132
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Balaji Raghothamachar ◽  
Michael Dudley
Keyword(s):  
Single Crystals ◽  
Growth Stage ◽  
Initial Growth ◽  
X Ray ◽  
Initial Growth Stage

Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography

2020 ◽  
Vol MA2020-02 (26) ◽  
pp. 1841-1841
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Balaji Raghothamachar ◽  
Michael Dudley
Keyword(s):  
Single Crystals ◽  
Growth Stage ◽  
Initial Growth ◽  
X Ray ◽  
Initial Growth Stage

In-situ surface x-ray scattering study on the buried interfacial layer of Co/Si(111) interface

2001 ◽  
Vol 696 ◽  
Author(s):  
Tae Soo Kang ◽  
Jung Ho Je ◽  
Hyo Jung Kim ◽  
Do Young Noh ◽  
Nam Dong Kim ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Growth Stage ◽  
Interfacial Structure ◽  
Initial Growth ◽  
X Ray ◽  
Initial Growth Stage ◽  
Silicide Layer ◽  
X Ray Scattering ◽  
Ray Scattering

AbstractThe highly strained interfacial structure and reaction of Co on Si(111) in the initial growth stage was studied by in-situ surface x-ray scattering. Co was deposited on Si(111) – (7×7) reconstruction by electron beam evaporation in ultra high vacuum. Our study reveals that the interfacial layer, formed by the reaction of Co with Si in the initial growth stage at room temperature, is a silicide layer with stoichiometry of Co2Si. The interfacial silicide layer is a commensurate phase of pseudohexagonal Co2Si, which shows a significant local atomic displacements imposed by Si substrate. The intensity oscillations at the anti-Bragg position with Co coverage show that a layer-by-layer consumption of silicon substrate occurs for the first 15 monolayers (ML) of Co deposited.

Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method

2000 ◽  
Vol 159-160 ◽  
pp. 432-440 ◽  
Author(s):  
M. Tabuchi ◽  
K. Hirayama ◽  
Y. Takeda ◽  
T. Takeuchi ◽  
H. Amano ◽  
...  
Keyword(s):  
Layered Structure ◽  
Growth Stage ◽  
Scattering Method ◽  
Initial Growth ◽  
X Ray ◽  
Initial Growth Stage
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