Suppression of Surface SiO2 Layer and Solid Phase Epitaxy of Amorphously Deposited Si Films using Heating-Up Under Si2H6 Environment

1996 ◽  
Vol 448 ◽  
Author(s):  
Tae-Hee Choe ◽  
Se-June Kim ◽  
Woon Choi ◽  
Hyoung-June Kim
Keyword(s):  
Epitaxial Layer ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Layer Formation ◽  
Lateral Overgrowth ◽  
Cleaning Procedures ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films ◽  
Heating Up

AbstractA novel technique to realize a selectively grown Si epitaxy layer has been developed. This technique consists of deposition of amorphous Si with oxide-free Si surface, selective solid phase epitaxial (SPE) growth on Si windows, and etching of uncrystallized amorphous Si on SiO2 layer. Formation of surface oxide can be effectively suppressed by flowing Si2H6 gas during heating-up stage to the deposition temperature. This method enables us to grow epitaxial layer without any high temperature cleaning procedures. Substantially higher growth rate of vertical SPE on Si windows over lateral SPE on SiO2 regions allows the growth of thick SPE layer with a minimized lateral overgrowth. With a proper etching solution, the remaining amorphous Si on SiO2 layer can be readily etched to form a selectively defined epitaxial layer on Si windows.

Reduction of Ca and F Segregated at the Surface of a Si/CaF2/Si(100) Structure By Solid Phase Epitaxy of Si

1985 ◽  
Vol 53 ◽  
Author(s):  
Masayoshi Sasaki ◽  
Hiroshi Onoda ◽  
Norio Hirashita
Keyword(s):  
Molecular Beam ◽  
Solid Phase ◽  
High Energy ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Segregation Effect ◽  
Order Of Magnitude ◽  
Amorphous Si ◽  
Si Epitaxy ◽  
Si Films

ABSTRACTEpitaxial Si films have been grown on single crystalline CaF2 on (l00)Si substrates by molecular beam epitaxy(MBE) or combination of MBE and solid phase epitaxy(SPE) of deposited amorphous Si(a-Si). It has been found that Ca and F segregate at the surface of the Si grown by MBE. The high energy electron diffraction (RHEED) patterns from the Si surface show the superstructures which are caused by the existence of Ca and F at the Si surface. To reduce the segregation effect, SPE process has been successfully applied to Si epitaxy. The Si SPE performed on top of the MBE Si layer reduces the Ca concentration at the Si surface by an order of magnitude, although the segregation effect is not completely suppressed.

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films onto Non-planar SiO2 Patterns

1985 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2patterns on Si substrates

1986 ◽  
Vol 48 (12) ◽  
pp. 773-775 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy

1983 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa ◽  
Masao Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Solid Phase ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 308-311 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Hitoshi Wakabayashi ◽  
Keizo Miyazaki ◽  
Kazuichi Fukao ◽  
Akira Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Competition Between Solid Phase Epitaxy and Random Crystallization During cw Laser Annealing of Amorphous Si Films

1981 ◽  
Vol 4 ◽  
Author(s):  
J.A. Roth ◽  
S.A. Kokorowski ◽  
G.L. Olson ◽  
L.D. Hess
Keyword(s):  
Laser Annealing ◽  
Volume Fraction ◽  
Solid Phase ◽  
Rapid Heating ◽  
Film Deposition ◽  
Solid Phase Epitaxy ◽  
Laser Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTThe kinetics of amorphous-to-polycrystalline conversion and solid phase epitaxy (SPE) in UHV-deposited Si films have been determined over a wide temperature range by the use of optical reflectivity measurements made during rapid heating by a cw Ar laser. Crystallization rates measured in UHV following film deposition are reported and compared to rates measured in air in order to elucidate the effects of contaminants on the processes. The effects of boron doping on nucleation and growth kinetics are also reported. The crystallization rates determined in these studies can be used to predict the volume fraction of polycrystalline material formed during laserinduced SPE growth of thick epitaxial layers.

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