Structural Investigations of Self-Assembled Ge-Dots by X-Ray Diffraction and Reflection

1996 ◽  
Vol 448 ◽  
Author(s):  
A.A. Darhuber ◽  
V. Holy ◽  
J. Stangl ◽  
G. Bauer ◽  
P. Schittenhelm ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
Structural Investigations ◽  
X Ray ◽  
Si Substrates ◽  
Self Organized ◽  
Lateral Ordering ◽  
Self Assembled ◽  
Square Array ◽  
Vertical Correlation

AbstractSelf-organized Ge-dots on (001)-oriented Si-substrates have been studied using two-dimensionally resolved high resolution x-ray diffraction and reflectivity. The degree of the vertical correlation of the dot positions ("stacking") has been derived as well as a lateral ordering of the dots in a (disordered) square array with main axes parallel to ]100] and ]010].

High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4084-4087 ◽  
Author(s):  
Anton A. Darhuber ◽  
Vaclav Holy ◽  
Julian Stangl ◽  
Günther Bauer ◽  
Alois Krost ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized ◽  
Lateral Ordering

Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

1997 ◽  
Vol 70 (8) ◽  
pp. 955-957 ◽  
Author(s):  
A. A. Darhuber ◽  
V. Holy ◽  
J. Stangl ◽  
G. Bauer ◽  
A. Krost ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized

scholarly journals High-resolution x-ray diffraction from multilayered self-assembled Ge dots

1997 ◽  
Vol 55 (23) ◽  
pp. 15652-15663 ◽  
Author(s):  
A. A. Darhuber ◽  
P. Schittenhelm ◽  
V. Holý ◽  
J. Stangl ◽  
G. Bauer ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

2011 ◽  
Vol 109 (12) ◽  
pp. 123714 ◽  
Author(s):  
A. Zhylik ◽  
A. Benediktovich ◽  
A. Ulyanenkov ◽  
H. Guerault ◽  
M. Myronov ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

High-resolution x-ray diffraction on self-organized step bunches of Si1-xGexgrown on (113)-oriented Si

1999 ◽  
Vol 32 (10A) ◽  
pp. A71-A74 ◽  
Author(s):  
J Stangl ◽  
V Holý ◽  
A A Darhuber ◽  
P Mikulík ◽  
G Bauer ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized

Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction

2000 ◽  
Vol 283 (1-3) ◽  
pp. 65-68 ◽  
Author(s):  
V. Holý ◽  
J. Stangl ◽  
G. Springholz ◽  
M. Pinczolits ◽  
G. Bauer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

1999 ◽  
Vol 588 ◽  
Author(s):  
X. C. Wang ◽  
S. J. Chua ◽  
S. J. Xu ◽  
Z. H. Zhang
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
High Resolution ◽  
Thermal Treatment ◽  
Ground State ◽  
Infrared Detectors ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

AbstractIn this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.

Micropatterned Arrays of ZnSe Nanospheres as Antireflection Coatings

2014 ◽  
Vol 67 (10) ◽  
pp. 1427 ◽  
Author(s):  
S. Sasi Florence ◽  
Priyanka Sachan ◽  
Raju Kumar Gupta ◽  
Rita John ◽  
Umadevi Mahalingam
Keyword(s):  
Low Cost ◽  
Gold Catalyst ◽  
Antireflection Coatings ◽  
Photovoltaic Devices ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray ◽  
Si Substrates ◽  
Self Assembled ◽  
Diffraction Patterns

In this work, we demonstrate deposition of micro-arrays of ZnSe nanospheres on Si (100) substrate using simple thermal evaporation on a self-assembled sacrificial polystyrene (PS) mask. The results have been compared with the deposition on unpatterned gold catalyst- and SU-8 (negative photoresist)-coated Si substrates. The deposited ZnSe nanospheres properties were characterised by X-ray diffraction, atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman, photoluminescence, and UV-vis spectroscopies. The X-ray diffraction patterns of the films exhibited reflection corresponding to the cubic (111) phase and showed polycrystallinity with a cubic (zinc blende) structure. The SEM and AFM images indicated that the particles were well dispersed and spherical in shape. The micro-arrays of ZnSe nanospheres on a self-assembled sacrificial PS mask showed excellent structural, morphological, and optical properties and demonstrated its usage in photovoltaic devices as an improved superior antireflective coating. The reflectance of the micro-arrays of ZnSe nanospheres on a self-assembled sacrificial PS mask decreased to nearly half of that of the ZnSe nanospheres fabricated on Au- and SU-8-coated Si substrates in the range of 300–800 nm. Due to the well aligned and patterned surfaces, these noble textured ZnSe nanospheres may be suitable for low cost, large area photovoltaic devices and other antireflection applications.

Sign in / Sign up

Export Citation Format

Share Document