Direct Bandgap Quantum Wells on GaP

1996 ◽  
Vol 448 ◽  
Author(s):  
Jong-Won Lee ◽  
Alfred T. Schremer ◽  
Dan Fekete ◽  
James R. Shealy ◽  
Joseph M. Ballantyne
Keyword(s):  
Quantum Wells ◽  
Variable Temperature ◽  
Growth Conditions ◽  
Band Alignment ◽  
Type I ◽  
X Ray Diffraction ◽  
Direct Bandgap ◽  
Conduction Band Offset ◽  
Alloy Semiconductors ◽  
Lattice Matched

AbstractCurrently, there are no direct-bandgap alloy semiconductors that can be grown lattice-matched to GaP substrates. A strained layer of GaInP can be grown on GaP, however, with difficulties. First, GaInP is an indirect-bandgap material for In concentrations up to ∼30%. Second, the band alignment between GaInP and GaP is type-II for In concentrations up to ∼60%. The Mathews-Blakeslee critical thickness of GaInP layer on GaP is prohibitively small in the useful In concentration range. GaInP is known to grow in an ordered phase in certain growth conditions. By changing the growth conditions, a heterojunction of ordered GaInP and disordered GaInP can be grown. The conduction band offset going from a disordered GaInP phase to an ordered GaInP phase has been reported to be about 150 meV. Using a layer of ordered GaInP, a QW with type-I band alignment may be grown on GaP for a wider range of composition.We have grown a series of approximately 60 Å thick GaP/GaInP/GaP strained quantum wells of various compositions using OMVPE. Strong photoluminescence, which exhibited an unusual temperature dependence, has been observed on many samples. A study of the QW’s using X-ray diffraction, TEM, and variable temperature PL reveals behaviors consistent with direct bandgap GaInP quantum wells containing ordered and disordered domains.

Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors Application

2006 ◽  
Vol 955 ◽  
Author(s):  
Seongsin M Kim ◽  
Homan B Yuen ◽  
Fariba Hatami ◽  
Akihiro Moto ◽  
Alan Chin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Growth Conditions ◽  
Excitation Power ◽  
Band Alignment ◽  
Type I ◽  
Dilute Nitride ◽  
X Ray Diffraction ◽  
Infrared Sensors ◽  
Conduction Band Offset

ABSTRACTWe report the growth and characterization of a new dilute nitride, InNAsSb/InAs, by solid source molecular beam epitaxy. Optimizing growth conditions for nitrogen incorporation has resulted in high-quality InNAsSb epilayers without any structural degradation, as confirmed by high-resolution x-ray diffraction. Optical properties were investigated by temperature dependent and excitation power dependent photoluminescence. We obtained mid-infrared luminescence around 4 mm at low temperature, which reveals strong carrier localization behavior at low temperature induced by nitrogen interacted with antimony. The band alignment of InNAsSb/InAs can be type-I and instead of conventional type-II, InAsSb/InAs, and a conduction band offset, Ec,of ∼102meV was obtained.

InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE

2008 ◽  
Vol 55-57 ◽  
pp. 821-824 ◽  
Author(s):  
D. Kaewket ◽  
S. Sanorpim ◽  
Sukkaneste Tungasmita ◽  
R. Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Light Emission ◽  
Peak Position ◽  
Conduction Band Edge ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Conduction Band Offset ◽  
Lattice Matched

Highly luminescence lattice-matched InxGa1-xP1-yNy/GaP single quantum wells (SQWs) on GaP (001) substrates were successfully grown by metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction measurements established that the lattice-matched InxGa1-xP1-yNy/GaP SQWs with various In (x = 0.050, 0.080, 0.135) and N (y = 0.025, 0.048, 0.071) contents were realized with excellent crystal quality and fairly flat interfaces. The results of photoluminescence (PL) and PL-excitation (PLE) showed the strong visible light emission (yellow to red emission) from the SQWs. With increasing In and N contents, the PL peak position and the PLE absorption edge exhibited the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset (∆Ec) of the InGaAPN/GaP quantum structure was estimated to be as high as 270 to 480 meV, which depends on the In and N contents in the well. Our results demonstrate that this novel InGaPN/GaP SQW system appropriates for the fabrication of light-emitting and laser diodes.

Type II Band Alignment inSi1−xGex/Si(001)Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending

1997 ◽  
Vol 79 (2) ◽  
pp. 269-272 ◽  
Author(s):  
M. L. W. Thewalt ◽  
D. A. Harrison ◽  
C. F. Reinhart ◽  
J. A. Wolk ◽  
H. Lafontaine
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Band Bending

Band Alignment of Si1-xGex And Si1-x-y.GexCy Quantum Wells On Si (001)

1998 ◽  
Vol 533 ◽  
Author(s):  
N. L. Rowell ◽  
R. L. Williams ◽  
G. C. Aers ◽  
H. Lafontaine ◽  
D. C. Houghton ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Applied Stress ◽  
Vapour Deposition ◽  
Stress Condition ◽  
High Vacuum ◽  
Chemical Vapour ◽  
Band Alignment ◽  
Ultra High Vacuum ◽  
Multiple Quantum ◽  
Type I

AbstractRecent low-temperature photoluminescence (PL) studies will be discussed for coherent Si1-xGex. and Si1-xGexCy alloy multiple quantum wells on Si (001) substrates grown by either ultra-high vacuum chemical vapour deposition or solid source molecular beam epitaxy. An in-plane applied-stress technique will be described which removes systematically band edge degeneracies revealing the lower, PL-active CB. Applied-stress data taken with this technique at ultra-low excitation intensity proved intrinsic type II CB alignment in SiGe on Si (001). Apparent type I alignment observed at higher intensity will also be discussed. New applied stress PL results are presented for Si1-x-yGexCy quantum wells under various grown-in stress condition

Theoretical Study of InAsSb/InTlSB Superlattice for the Far Infrared Detector

1996 ◽  
Vol 421 ◽  
Author(s):  
S. Iyer ◽  
S. Chowdhury-Nagle ◽  
J. Li ◽  
K.K. Bajaj
Keyword(s):  
Heavy Hole ◽  
Infrared Detector ◽  
Far Infrared ◽  
Structural Quality ◽  
Accurate Information ◽  
Band Offset ◽  
Type I ◽  
Valence Band Offset ◽  
Conduction Band Offset ◽  
Lattice Matched

AbstractWe propose a novel superlattice (SL) InAsySb1−y)/InxTl1−xSb lattice matched to InSb for a potential application as an infrared detector material in the 8–12 μm wavelength range. We report on the results of energy band calculations for this SL using the modified Kronig-Penney model. Our preliminary calculations indicate that InAs0.07Sb0.93/In0.93Tl0.07Sb would exhibit a type-I SL with conduction band offset of 34 meV and valence band offset of 53 meV at 0K. Due to the lack of accurate information on material parameters, namely, energy offsets and effective masses of InTlSb, these were estimated by comparison with the behavior of HgCdTe system. The theory predicts three heavy hole subbands and one partially confined electron in the 30Å InAs0.07Sb0.93/100Å In0.93Tl0.07Sb SL. The band gap of the SL was computed to be 0.127 eV (9.7 μm). It is expected that this SL will allow improvements in the InTlSb epilayers’ structural quality as it will be sandwiched between higher quality zincblende InAsSb layers.

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

Arsenic Incorporation in InP Epilayers and Arsenide/InP Heterostructures Grown by Chemical Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
V. Rossignol ◽  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
G. Neu
Keyword(s):  
Quantum Wells ◽  
Flux Ratio ◽  
Optimal Growth ◽  
Growth Conditions ◽  
Chemical Beam Epitaxy ◽  
X Ray Diffraction ◽  
Group V ◽  
Low Levels ◽  
Diffraction Patterns ◽  
Arsenic Incorporation

ABSTRACTLow levels of arsenic contamination have been previously reported (∼0.01%) in CBE grown InP by different groups. The level of As incorporation in InP is usually enhanced when arsenide(InGaAs, InAsP) / InP heterostructures are grown.In this work, optimal growth conditions to minimize the non-intentional As contamination during the growth of these heterostructures are discussed. The red shift of band-edge excitons in the low temperature photoluminescence spectra as well as the analysis of high resolution X-ray diffraction patterns of InAsP/InP multi-quantum wells suggest the presence of As in InP barriers. This contamination is consistent with the ratio of As/P partial pressure (As residual in the chamber: 10-9-10-8 Torr) and the As/P incorporation rates. We have studied the influence of the growth temperature, the group-V/III flux ratio and the growth rate on the level of the As incorporation.

Study of Band Alignment at the Interface between CBD-CdS and CIGS grown by H2O-introduced co-evaporation

2007 ◽  
Vol 1012 ◽  
Author(s):  
Norio Terada ◽  
Hirotake Kashiwabara ◽  
Kazuya Kikunaga ◽  
Shimpei Teshima ◽  
Tetsuji Okuda ◽  
...  
Keyword(s):  
Conduction Band ◽  
Valence Band Maximum ◽  
Band Gap Energy ◽  
Band Alignment ◽  
Type I ◽  
Conduction Band Offset ◽  
Substitution Ratio ◽  
Band Alignments ◽  
Inverse Photoemission Spectroscopy ◽  
Ga Substitution

AbstractFor understanding the origin of the improvements of properties in the CIGS-based cells, of which the CIGS absorber has been fabricated by H2O-introduced co-evaporation [CIGS-H2O], band alignment at the interfaces between chemical bath deposited CdS and CIGS-H2O with Ga substitution ratio ~ 40 % has been studied by photoemission and inverse photoemission spectroscopy. The CdS layer over the CIGS-H2O showed an identical electronic structure with that of CdS on the conventionally grown CIGS; band gap energy of 2.3 ~ 2.4 and a location of conduction band minimum (CBM) and valence band maximum (VBM) relative to Fermi level were + 0.75 eV and -1.6 ~ -1.7 eV, respectively. In the interface region, decreases of CBM and a rise of VBM were observed. Total amount of the decrease of CBM over the interface was 0.2 ~ 0.3 eV. XPS measurements of the core-level signals over the interface showed a small upward bend bending of 0.1 ~ 0.2 eV. Consequently, the conduction band offset (CBO) and valence bad offset (VBO) at the CBD-interface over the CIGS-H2O (Ga~40%) are about +0.1, and 0.9 ~ 1.1 eV, respectively. This positive CBO is contrast with a slightly negative CBO at the interface between CBD-CdS/conventionally grown CIGS with Ga ~ 40 % measured previously. These results indicate that the H2O introduction is effective to extend the upper limit of the Ga substitution ratio where the Type-I conduction band alignment is maintained. The observed band alignments are consistent with the rise of Voc and efficiency in the CIGS-H2O based cells.

Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells

1998 ◽  
Vol 533 ◽  
Author(s):  
R. Hartmann ◽  
U. Gennser ◽  
D. Grützmacher ◽  
H. Sigg ◽  
E. Müller ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Valence Band ◽  
Band Alignment ◽  
Multiple Quantum ◽  
Type I ◽  
Strain Compensation ◽  
Quantum Well States ◽  
Good Agreement

AbstractThe effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.

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