Surfactant-Mediated Si/Ge Epitaxial Crystal Growth
Keyword(s):
AbstractWe investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.
2019 ◽
Vol 7
(11)
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pp. 9808-9821
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Keyword(s):
2014 ◽
Vol 118
(39)
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pp. 9212-9219
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2012 ◽
Vol 116
(28)
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pp. 14883-14891
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2013 ◽
Vol 135
(29)
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pp. 10673-10683
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2014 ◽
Vol 783-786
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pp. 1640-1645