Gas Stream Analysis and PFC Recovery in A Semiconductor Process

1996 ◽  
Vol 447 ◽  
Author(s):  
J.A.B. van Hoeymissen ◽  
M. Daniels ◽  
N. Anderson ◽  
W. Fyen ◽  
M. Heyns
Keyword(s):  
Plasma Etching ◽  
Pressure Swing Adsorption ◽  
Process Conditions ◽  
Plasma Process ◽  
Mass Spectrometers ◽  
Semiconductor Plasma ◽  
Plasma Chamber ◽  
Pre Treatment ◽  
Pressure Swing ◽  
Semiconductor Process

AbstractThe performance of pressure swing adsorption (PSA) technology was assessed for recovering PFCs from the exhaust of a semiconductor plasma process. Several PSA process conditions were run to determine an optimized system. Under well defined conditions, the PSA technique was found to be effective at separating C2F6 from nitrogen, although the balance between recovery and product purity was evident. The exhaust of a plasma chamber was analysed by mass spectrometers and plasma etching conditions were varied to determine the effects on the PSA performance. A gas reactor column (GRC) was tested as pre‐treatment of the capturing system

Plasma Etching Conditioning of Textured Crystalline Silicon Surfaces for a-Si/c-Si Heterojunctions

1999 ◽  
Vol 557 ◽  
Author(s):  
R. De Rosa ◽  
M.L. Addonizio ◽  
E. Chiacchio ◽  
F. Roca ◽  
M. Tucci
Keyword(s):  
Plasma Etching ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Native Oxide ◽  
Process Conditions ◽  
Native Oxide Layer ◽  
Plasma Process ◽  
Large Area ◽  
Layer Deposition

AbstractThe development of a hybrid heterojunction fabricated by growing ultrathin amorphous silicon by Plasma Enhanced Chemical Vapor Deposition using temperatures below 250°C offers the potential of obtaining high efficiency solar cells deposited on glassy substrates. The surface preparation represents one of the most critical steps. The first aim of etching is to remove the native oxide layer from the surface of the crystalline wafer, before amorphous layer deposition. The possibility of obtaining this goal with a dry procedure that reduces the exposure of the sample to the environment is not trivial.We performed several dry etching processes but the best results were obtained using an etching process involving CF4/O2 gases. We have found evidence that plasma etching acts by removing the native oxide and the damaged surface of textured silicon and by leaving an active layer on silicon surface suitable for the emitter deposition. SEM analysis has confirmed that it is possible to find plasma process conditions where no appreciable damage and changes in surface morphology are induced. Detailed investigation was performed to find compatibility and optimization of amorphous layer deposition both on flat and textured cast silicon by changing the plasma process parameters. By using this process we achieved on cast silicon for solar applications photovoltaic conversion efficiencies of 12.9% on 51 cm2 and 9.2% on 45 cm2 active areas for amorphous crystalline heterostructure devices realized on monocrystalline and polycrystalline silicon respectively. We also investigated the compatibility of the process with industrial production of large area devices.

Adsorbents for Pressure Swing Adsorption Regeneration

1999 ◽  
Author(s):  
David T. Croft ◽  
David K. Friday ◽  
Jeffrey M. Campbell
Keyword(s):  
Pressure Swing Adsorption ◽  
Pressure Swing

A shortcut pressure swing adsorption analogue model to estimate Gas-in-Place and CO2 storage potential of gas shales

Fuel ◽  
2021 ◽  
Vol 301 ◽  
pp. 121014
Author(s):  
Humera Ansari ◽  
Elena Rietmann ◽  
Lisa Joss ◽  
JP Martin Trusler ◽  
Geoffrey Maitland ◽  
...  
Keyword(s):  
Pressure Swing Adsorption ◽  
Co2 Storage ◽  
Analogue Model ◽  
Gas Shales ◽  
Storage Potential ◽  
Pressure Swing

Adsorption of Carbon Dioxide on Monoethanolamine (MEA)–Impregnated Kenaf Core Fiber by Pressure Swing Adsorption System (PSA)

2014 ◽  
Vol 68 (5) ◽  
Author(s):  
Nabilah Zaini ◽  
Khairul Sozana Nor Kamarudin
Keyword(s):  
Carbon Dioxide ◽  
Carbon Capture ◽  
Pressure Swing Adsorption ◽  
Co2 Adsorption ◽  
Carbon Capture And Storage ◽  
Freundlich Isotherm ◽  
Industrial Applications ◽  
Sem Analysis ◽  
Impregnation Method ◽  
Pressure Swing

Emission of carbon dioxide (CO2) becomes a major concern in combating issues of global warming. The strategy to reduce the concentration of CO2 could be achieved by executing carbon capture and storage (CCS) technology such as adsorption. This study presents the used of kenaf as a green source for CO2 adsorption material. The modification of MEA on kenaf is a novelty work to enhance the capacity of adsorbent since MEA has been proved to have potential in separating CO2 in industrial applications. In this work, 10 wt % of MEA has been impregnated on kenaf via wet impregnation method. The adsorption of CO2 study was conducted by passing CO2/N2 mixture in a ratio of 30:70 in a Pressure Swing Adsorption (PSA) system with a pressure up to 1.5 bar at ambient temperature. Result obtained via SEM analysis shows that the morphology of kenaf was affected after modification with MEA. However, the presence of MEA on kenaf has improved the CO2 adsorption capacity by 16 %. In addition, the adsorption equilibrium data for kenaf and MEA modified kenaf are well fitted in Freundlich isotherm model at low pressure and well fitted in Langmuir model at higher pressure. This study indicates that the introduction of MEA on kenaf could enhance the CO2 adsorption process.  

Pressure swing adsorption reactors: Simulation of three-step one-bed process

AIChE Journal ◽  
1994 ◽  
Vol 40 (7) ◽  
pp. 1118-1137 ◽  
Author(s):  
Z. P. Lu ◽  
A. E. Rodrigues
Keyword(s):  
Pressure Swing Adsorption ◽  
Pressure Swing
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