Electron-Beam Moiré Study Of Local Deformation In Conductive Adhesives

1996 ◽  
Vol 445 ◽  
Author(s):  
E. S. Drexler ◽  
J. R. Berger
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Strain Measurement ◽  
Local Deformation ◽  
Large Displacements ◽  
Conductive Adhesives ◽  
Lap Shear ◽  
Film Specimen ◽  
Measurement Capabilities ◽  
Scanning Electron

AbstractElectron-beam (e-beam) moiré is a recently developed technique for micro-mechanics. It allows one to combine the resolution of the scanning electron microscope (SEM) with the strain measurement capabilities of moiré. With e-beam moiré we are able to study locally the effect of temperatures ranging between −50 and 150 °C on conductive adhesives (CAs) and their interfaces. With this technique we measured the local displacements due to the thermal expansion of the copper and the CA. The modified lap-shear specimens were made of copper-to-copper attached with CAs and cured according to the manufacturer's instructions. A cross section of each material was polished and a moiré grating was written on the surface using e-beam lithography techniques. Digital images of the moiré were collected from the SEM at regular temperature intervals. The images were compared and the displacements measured. Local regions of large displacements were observed in the paste specimen. Permanent deformations in the film specimen resulted from exceeding the glass transition temperature of the CA.

Mechanical Deformation in Conductive Adhesives as Measured With Electron-Beam Moire´

1999 ◽  
Vol 121 (2) ◽  
pp. 69-74 ◽  
Author(s):  
E. S. Drexler ◽  
J. R. Berger
Keyword(s):  
Electron Beam ◽  
Mechanical Deformation ◽  
Shear Mode ◽  
Conductive Adhesives ◽  
Additional Loading ◽  
The Matrix ◽  
Film Specimen ◽  
Shear Strains ◽  
Electron Beam Moiré

Two forms (paste and film) of isotropically conductive adhesives (CAs) were mechanically loaded in shear mode. The specimens were instrumented with crossed-line gratings so that normal and shear displacements could be measured. The CA paste specimen failed outside the observed region at a stress 28 percent below the manufacturer’s predicted value. In the observed region there were no normal strains, only shear strains restricted to the CA. In the film specimen the conducting particles began breaking away from the matrix epoxy at very low loads. However, the specimen continued carrying the additional loading increments until the load was transferred to the adjacent material.

Disptacement of Arsenic from Substitutional Sites in Silicon by MEV HE+ Irradiation

1985 ◽  
Vol 45 ◽  
Author(s):  
E A Maydell-Ondrusz ◽  
I H Wilson ◽  
K G Stephens
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Cross Section ◽  
Cross Sections ◽  
Electron Beam Irradiation ◽  
Arsenic Concentration ◽  
Beam Irradiation ◽  
Mbe Growth ◽  
Silicon Doped ◽  
Scanning Electron

ABSTRACTCross-sections were determined for displacement of arsenic from substitutional sites in silicon by 1.5MeV He+ ions. Results are presented for channelled and random incidence on (111) and (100) silicon, doped by arsenic implantation and annealed by scanning electron beam irradiation. Layers doped during MBE growth were also studied for comparison.Inner L-shell ionisation of host atoms is proposed to explain the observed displacement cross-section and its variation with arsenic concentration. The results are used to indicate the limits for using Rutherford backscattering and channelling techniques to measure the substitutionality of dopants in single crystals.

Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

1973 ◽  
Vol 31 ◽  
pp. 444-445
Author(s):  
P.J. Killingworth ◽  
M. Warren
Keyword(s):  
Electron Beam ◽  
Organic Materials ◽  
Operating Parameters ◽  
Low Density ◽  
Beam Diameter ◽  
Incident Electron Beam ◽  
Specimen Material ◽  
Voltage Compensation ◽  
Selection Of ◽  
Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

X-ray micro tomography in the scanning electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 106-107 ◽  
Author(s):  
W. Brünger
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Target Surface ◽  
The Body ◽  
X Rays ◽  
Cross Sectional ◽  
X Ray ◽  
Micro Tomography ◽  
Scanning Electron

Reconstructive tomography is a new technique in diagnostic radiology for imaging cross-sectional planes of the human body /1/. A collimated beam of X-rays is scanned through a thin slice of the body and the transmitted intensity is recorded by a detector giving a linear shadow graph or projection (see fig. 1). Many of these projections at different angles are used to reconstruct the body-layer, usually with the aid of a computer. The picture element size of present tomographic scanners is approximately 1.1 mm2.Micro tomography can be realized using the very fine X-ray source generated by the focused electron beam of a scanning electron microscope (see fig. 2). The translation of the X-ray source is done by a line scan of the electron beam on a polished target surface /2/. Projections at different angles are produced by rotating the object.During the registration of a single scan the electron beam is deflected in one direction only, while both deflections are operating in the display tube.

Energy Distribution in Electron Beams

1972 ◽  
Vol 30 ◽  
pp. 568-569
Author(s):  
Tamotsu Ohno
Keyword(s):  
Electron Beam ◽  
Energy Distribution ◽  
Cross Section ◽  
Integral Curve ◽  
Electron Beams ◽  
Electron Gun ◽  
Angular Divergence ◽  
Apparent Increase ◽  
Integral Width ◽  
The Cross

The energy distribution in an electron; beam from an electron gun provided with a biased Wehnelt cylinder was measured by a retarding potential analyser. All the measurements were carried out with a beam of small angular divergence (<3xl0-4 rad) to eliminate the apparent increase of energy width as pointed out by Ichinokawa.The cross section of the beam from a gun with a tungsten hairpin cathode varies as shown in Fig.1a with the bias voltage Vg. The central part of the beam was analysed. An example of the integral curve as well as the energy spectrum is shown in Fig.2. The integral width of the spectrum ΔEi varies with Vg as shown in Fig.1b The width ΔEi is smaller than the Maxwellian width near the cut-off. As |Vg| is decreased, ΔEi increases beyond the Maxwellian width, reaches a maximum and then decreases. Note that the cross section of the beam enlarges with decreasing |Vg|.

Micropatterning of Permalloy Films by Electron Lithography

1976 ◽  
Vol 34 ◽  
pp. 448-449
Author(s):  
J. K. Maurin
Keyword(s):  
Electron Beam ◽  
Subsequent Development ◽  
Electron Optical System ◽  
Microelectronic Device ◽  
Magnetic Bubble ◽  
Control Beam ◽  
Photosensitive Material ◽  
Direct Exposure ◽  
Electron Lithography ◽  
Scanning Electron

Conductor, resistor, and dielectric patterns of microelectronic device are usually defined by exposure of a photosensitive material through a mask onto the device with subsequent development of the photoresist and chemical removal of the undesired materials. Standard optical techniques are limited and electron lithography provides several important advantages, including the ability to expose features as small as 1,000 Å, and direct exposure on the wafer with no intermediate mask. This presentation is intended to report how electron lithography was used to define the permalloy patterns which are used to manipulate domains in magnetic bubble memory devices.The electron optical system used in our experiment as shown in Fig. 1 consisted of a high resolution scanning electron microscope, a computer, and a high precision motorized specimen stage. The computer is appropriately interfaced to address the electron beam, control beam exposure, and move the specimen stage.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

A Color Coded STEM/SEM Image Storage System

1981 ◽  
Vol 39 ◽  
pp. 272-273
Author(s):  
Y. Kokubo ◽  
W. H. Hardy ◽  
J. Dance ◽  
K. Jones
Keyword(s):  
Image Processing ◽  
Electron Beam ◽  
Storage System ◽  
Particle Analysis ◽  
Specific Information ◽  
X Rays ◽  
Sem Image ◽  
Backscattered Electrons ◽  
Wide Range ◽  
Scanning Electron

A color coded digital image processing is accomplished by using JEM100CX TEM SCAN and ORTEC’s LSI-11 computer based multi-channel analyzer (EEDS-II-System III) for image analysis and display. Color coding of the recorded image enables enhanced visualization of the image using mathematical techniques such as compression, gray scale expansion, gamma-processing, filtering, etc., without subjecting the sample to further electron beam irradiation once images have been stored in the memory.The powerful combination between a scanning electron microscope and computer is starting to be widely used 1) - 4) for the purpose of image processing and particle analysis. Especially, in scanning electron microscopy it is possible to get all information resulting from the interactions between the electron beam and specimen materials, by using different detectors for signals such as secondary electron, backscattered electrons, elastic scattered electrons, inelastic scattered electrons, un-scattered electrons, X-rays, etc., each of which contains specific information arising from their physical origin, study of a wide range of effects becomes possible.

Searching for the causes why some of the paintings by Mihaly Munkacsy are darkening

1990 ◽  
Vol 48 (2) ◽  
pp. 204-205
Author(s):  
Imre Pozsgai ◽  
Klara Erdöhalmi-Torok
Keyword(s):  
Electron Beam ◽  
Cross Section ◽  
Polyester Resin ◽  
National Gallery ◽  
X Ray ◽  
Art Historians ◽  
Made In ◽  
Grinding And Polishing

The paintings by the great Hungarian master Mihaly Munkacsy (1844-1900) made in an 8-9 years period of his activity are deteriorating. The most conspicuous sign of the deterioration is an intensive darkening. We have made an attempt by electron beam microanalysis to clarify the causes of the darkening. The importance of a study like this is increased by the fact that a similar darkening can be observed on the paintings by Munkacsy’s contemporaries e.g Courbet and Makart. A thick brown mass the so called bitumen used by Munkacsy for grounding and also as a paint is believed by the art historians to cause the darkening.For this study, paint specimens were taken from the following paintings: “Studio”, “Farewell” and the “Portrait of the Master’s Wife”, all of them are the property of the Hungarian National Gallery. The paint samples were embedded in a polyester resin “Poly-Pol PS-230” and after grinding and polishing their cross section was used for x-ray mapping.

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