Field Drift Of Plasma-Induced Defects In Phosphorus Doped Si By Reverse Bias Annealing (RBA)

1996 ◽  
Vol 442 ◽  
Author(s):  
J. Takeuchi ◽  
Y. Zaitsu ◽  
T. Shimizu ◽  
S. Matsumoto ◽  
K. Wada
Keyword(s):  
Reverse Bias ◽  
Arrhenius Plot ◽  
Thermal Dissociation ◽  
Dissociation Rate ◽  
Plasma Exposure ◽  
Defect Complexes ◽  
Induced Defects ◽  
Phosphorus Doped ◽  
Charged Defects ◽  
Field Drift

AbstractThe property of plasma induced defects in phosphorus doped CZ silicon has been investigated by reverse bias annealing (RBA). After CF4 plasma exposure, charge density at the surface decreased since plasma induced negatively charged defects inactivated phosphorus. With the increase of annealing time, inactivated phosphorus area moved into the bulk with reverse bias of −3V. Thus it is clearly observed that negatively charged defects drifted from the surface into the bulk. The thermal dissociation energy for phosphorus-defect complexes is estimated to be 1.22eV from the Arrhenius plot of dissociation rate. These defects are likely to be Si self interstitials or vacancies.

Comparison of Current and Light Induced Defects in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
R.A. Street ◽  
W.B. Jackson ◽  
M. Hack
Keyword(s):  
Numerical Modelling ◽  
Reverse Bias ◽  
Defect Density ◽  
Reverse Current ◽  
Bias Current ◽  
Spatial Profile ◽  
Forward Current ◽  
Defect Creation ◽  
Induced Defects ◽  
Metastable Defect

Metastable defect creation by illumination and by a forward current in p-i-n devices are compared using CPM and reverse current measurements of the defect density. The data show that the same defects are formed by the two mechanisms, but with different spatial profiles. Numerical modelling shows how the spatial profile influences the reverse bias current.

Hydrogen Dynamics in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Paulo V. Santos
Keyword(s):  
Carrier Concentration ◽  
Thermal Equilibrium ◽  
Carrier Density ◽  
Reverse Bias ◽  
Diffusion Path ◽  
Dissociation Rate ◽  
Effective Density ◽  
Hydrogen Migration ◽  
Carrier Population

The interaction between electronic carriers and hydrogen migration in a-Si:H was investigated by diffusion experiments in the intrinsic (i−) layer of p-i-n a-Si:H photo-diodes. The carrier concentration in the i-layer was controlled by varying the bias applied to the devices. Hydrogen migration (i) is enhanced when the carrier population is increased by illumination and (ii) is suppressed when it is reduced below the thermal equilibrium value by the application of a reverse bias to the diodes. The effect is attributed to the dependence on carrier density of the dissociation rate of hydrogen from Si-H bonds into the diffusion path consisting of interstitial sites. In addition, the migration length in the diffusion path increases under reverse bias. The enhanced migration is associated with a decrease in the effective density of traps for hydrogen in a carrier-depleted layer. Possible mechanisms for the interaction between hydrogen migration, carriers and defects are discussed.

Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC

1998 ◽  
Vol 513 ◽  
Author(s):  
M. Janson ◽  
M. K. Linnarsson ◽  
A. Hallén ◽  
B. G. Svensson
Keyword(s):  
Experimental Data ◽  
Mass Spectrometry ◽  
Monte Carlo ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiles ◽  
Defect Complexes ◽  
Induced Defects ◽  
Secondary Ion ◽  
Anneal Time

ABSTRACTEpitaxial layers of low doped 4H-SiC are implanted with 20 keV 2H+ ions to a dose of 1×1015 cm−2. The samples are subsequently annealed at temperatures ranging from 1040 to 1135 °C. Secondary ion mass spectrometry is used to obtain the concentration versus depth profiles of the atomic deuterium in the samples. It is found that the concentration of implanted deuterium decreases rapidly in the samples as a function of anneal time.The experimental data are explained by a model where the deuterium migrates rapidly and becomes trapped and de-trapped at implantation-induced defects which exhibit a slightly shallower depth distribution than the implanted deuterium ions. Computer simulations using this model, in which the damage profile is taken from Monte Carlo simulations and the surface is treated as a perfect sink for the diffusing deuterium atoms, are performed with good results compared to the experimental data. The complexes are tentatively identified as carbon-deuterium at a Si-vacancy and a dissociation energy (ED) of approximately 4.9 eV is extracted for the deuterium-vacancy complexes.

Thermal Dissociation Rate of CsF

1971 ◽  
Vol 55 (6) ◽  
pp. 2918-2921 ◽  
Author(s):  
A. Mandl
Keyword(s):  
Thermal Dissociation ◽  
Dissociation Rate

scholarly journals How the absorber thickness influences the formation of reverse bias induced defects in CIGS solar cells

2020 ◽  
Vol 11 ◽  
pp. 9
Author(s):  
Klaas Bakker ◽  
Alix Rasia ◽  
Suzanne Assen ◽  
Basma Ben Said Aflouat ◽  
Arthur Weeber ◽  
...  
Keyword(s):  
Solar Cells ◽  
Shade Tolerance ◽  
Reverse Bias ◽  
Absorber Thickness ◽  
Pv Module ◽  
Cigs Solar Cells ◽  
Induced Defects ◽  
Reverse Bias Condition ◽  
Bias Condition ◽  
Number Of Cells

When a PV module is partially shaded, the shaded solar cells operate in a reverse bias condition. For Cu(In,Ga)Se2 cells this condition can cause defects that irreversibly reduce the output of these cells and the full module. In order to design robust shade-tolerant CIGS modules details need to be known of the conditions at which these defects will be formed. In this study a large number of cells were exposed to different reverse bias conditions. By using simple statistics the probability of the occurrence of defects as a result of reverse bias at any given voltage has been determined. Based on our experiments we have found that the absorber thickness is one of the main parameters that affects the shade-tolerance: the thicker the absorber, the more shade tolerant the CIGS module will be.

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