Defects In 4H Silicon Carbide CVD Epilayers

1996 ◽  
Vol 442 ◽  
Author(s):  
L. Zhou ◽  
P. Pirouz ◽  
J. A. Powell
Keyword(s):  
Formation Mechanism ◽  
Chemical Vapor ◽  
Cross Sectional ◽  
Plan View ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Steps ◽  
Transmission Electron ◽  
Surface Decoration ◽  
Decoration Technique

AbstractThe characteristic defects of 4H-SiC homoepitaxial thin films grown on bulk substrates using chemical vapor deposition (CVD) are described based on transmission electron microscopy (TEM), atomic force microscopy (AFM) and surface decoration studies. Emphasis is placed on understanding the formation mechanism of surface triangular defects. Cross-sectional TEM observations revealed the existence of two variants of 3C-SiC inclusions in 4H epitaxial films. In the plan-view orientation, g4H = 3304 type reflections were found useful for distinguishing the two variants of 3C-SiC platelets that are present in the 4H epilayer. A decoration technique was employed to reveal the relationship between the 3C platelets and surface features, e.g., surface steps. A formation mechanism for surface triangular defects is proposed, which is partially confirmed by the etch pit patterns obtained on the epilayer surfaces after a molten KOH etch.

Structure of Carrot Defects in 4H-SiC Epilayers

2006 ◽  
Vol 527-529 ◽  
pp. 327-332 ◽  
Author(s):  
X. Zhang ◽  
Seo Young Ha ◽  
M. Benamara ◽  
Marek Skowronski ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Basal Plane ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Force Microscopy ◽  
Carrier Recombination ◽  
Atomic Force ◽  
Transmission Electron ◽  
Homoepitaxial Layers ◽  
Koh Etching

Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional transmission x-ray topography, cross-sectional transmission electron microscopy, atomic force microscopy, and KOH etching. The carrot defects nucleate at the substrate/epilayer interface at the emergence points of threading screw dislocations propagating from the substrate. The typical defect consists of two stacking faults: one in the prismatic plane with second one in the basal plane. The faults are connected by a stair-rod dislocation with Burgers vector 1/n[10-10] with n>3 at the cross-over. The basal plane fault is of Frank-type. Carrot defects are electrically active as evidenced by contrast in EBIC images indicating enhanced carrier recombination rate. Presence of carrot defects in the p-i-n diodes results in higher pre-breakdown reverse leakage current and approximately 50% lower breakdown voltage compared to the nominal value.

Microstructural Characterization of Low Temperature GaAs(111)B MBE Growth by AFM and Tem

1992 ◽  
Vol 280 ◽  
Author(s):  
M. P. de Boer ◽  
J. E. Angelo ◽  
A. M. Dabiran ◽  
P. I. Cohen ◽  
W. W. Gerberich
Keyword(s):  
Low Temperature ◽  
Microstructural Characterization ◽  
Cross Sectional ◽  
Plan View ◽  
Mbe Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Low Temperature Gaas

ABSTRACTAtomic Force Microscopy (AFM) images are correlated with Transmission Electron Microscopy (TEM) plan-view images in a structure consisting of <111> oriented GaAs layers grown by molecular beam epitaxy (MBE) at 500°C. We present results on the applicability of AFM, which requires short sample preparation and imaging time relative to TEM, in obtaining information on twin density and growth pits of these low temperature samples. Also, we discuss the behavior of twin boundaries by comparing plan-views and cross sectional TEM images.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

2020 ◽  
Vol 1004 ◽  
pp. 414-420
Author(s):  
Junro Takahashi ◽  
Kotaro Kawaguchi ◽  
Kazuhiko Kusunoki ◽  
Tomoyuki Ueyama ◽  
Kazuhito Kamei
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solution Growth ◽  
Spiral Growth ◽  
Growth Surface ◽  
Vicinal Surface ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

scholarly journals Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD

2007 ◽  
Vol 2 (2) ◽  
pp. 81-84
Author(s):  
S. N. M. Mestanza ◽  
I. Doi ◽  
N. C. Frateschi
Keyword(s):  
Quantum Dots ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Nucleation Parameters ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Mean Size ◽  
Germanium Quantum Dots

Germanium quantum dots (Ge-QD) were grown by Low Pressure Chemical Vapor Deposition (LPCVD) on Si nucleus previously grown on 3 nm thick SiO2 ultra thin film. Samples were analyzed by atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). We report the analysis of the influence of the nucleation parameters on size and spatial distribution of Ge-QD. AFM images show a Ge-QD density of around 3.6x1010 cm-2, with an 11 nm mean size and 2.9 nm height. Finally, HRTEM investigation shows that the Ge-QD have a crystalline structure, i.e., they are nanocrystals.

Interface structure and formation between gold and trimethylcyclohexane polycarbonate

1999 ◽  
Vol 14 (9) ◽  
pp. 3538-3543 ◽  
Author(s):  
C. v. Bechtolsheim ◽  
V. Zaporojtchenko ◽  
F. Faupel
Keyword(s):  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Cluster Formation ◽  
Systematic Investigation ◽  
Temperature Dependent ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Metal Diffusion ◽  
Atomic Force ◽  
Transmission Electron

This paper presents the results of a systematic investigation of structure and formation of the interface between gold and trimethylcyclohexane polycarbonate, particularly concerning interface evolvement during gold evaporation and the influence of evaporation rate, substrate temperature, and subsequent annealing. The means of investigation were cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. Extensive metal diffusion into the polymer and cluster formation near the interface were observed at deposition rates of the order of one monolayer per minute and below. The penetration depth is strongly temperature dependent. At high evaporation rates metal aggregation at the surface prevents cluster formation inside the polymer. No diffusion into the polymer was observed from metal films deposited at room temperature after extensive annealing at elevated temperatures.

High Quality in.Ga1−xas Heterostructures Grown on GaAs With Movpe

1998 ◽  
Vol 510 ◽  
Author(s):  
M.T. Bulsara ◽  
E.A. Fitzgerald
Keyword(s):  
Surface Roughness ◽  
Phase Separation ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Plan View ◽  
Force Microscopy ◽  
Optimum Growth Temperature ◽  
Transmission Electron ◽  
Metal Organic

AbstractInxGa1−xAs structures with compositionally graded buffers were grown by metal-organic vapor phase epitaxy (MOVPE) on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy (PV-TEM and X-TEM), atomic force microscopy (AFM), and x-ray diffraction (XRD). The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in InxGa1−xAs. The strain energy due misfit dislocations in the graded buffer indirectly influences phase separation. At growth temperatures above and below this temperature, the surface roughness is decreased significantly; however, only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for grading InxGa1−xAs determined to be 700°C, it was possible to produce In0.33Ga0.67As diode structures on GaAs with threading dislocation densities < 8.5 × 106/cm2

Si1-xGex Critical Thickness for Surface Wave Generation During UHV-CVD Growth at 525°C

1995 ◽  
Vol 399 ◽  
Author(s):  
H. Lafontaine ◽  
D.C. Houghton ◽  
B. Bahierathan ◽  
D.D. Perovic ◽  
J.-M. Baribeau
Keyword(s):  
Electron Microscopy ◽  
Surface Waves ◽  
Critical Thickness ◽  
Critical Value ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Cvd Growth

ABSTRACTSeveral Si1-xGex/Si heterostructures were grown at 525°C using a commercially available UHV-CVD reactor. Layers with a germanium fraction ranging from 0.15 to 0.5 were examined by means of cross-sectional transmission electron microscopy and atomic force microscopy. Surface waves were found in layers with a thickness above a critical value which decreases rapidly as the Ge fraction is increased. Both experimental and modeling results show that surface waves are generated before misfit dislocations for Ge fractions above 0.3.

scholarly journals Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited onc-Plane Sapphire

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Sheng-Rui Jian ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Contact Stiffness ◽  
Maximum Load ◽  
Cross Sectional ◽  
Continuous Contact ◽  
Force Microscopy ◽  
Atomic Force ◽  
Slip Bands ◽  
Transmission Electron ◽  
Deformation Behaviors

The mechanical properties and deformation behaviors of AlN thin films deposited onc-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nanoindentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the “pop-ins” phenomena during nanoindentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nanoindentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young’s modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

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