Electrically Detected Magnetic Resonance On GaAs/AIGaAs Heterostructures

1996 ◽  
Vol 442 ◽  
Author(s):  
T. Wimbauer ◽  
D. M. Hofmann ◽  
B. K. Meyer ◽  
M. S. Brandt ◽  
T. Brandl ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Surface Defects ◽  
Electrical Contact ◽  
Paramagnetic Resonance ◽  
Quantum Well Structures ◽  
Carrier Recombination ◽  
Electrically Detected Magnetic Resonance ◽  
Antisite Defects ◽  
G Value ◽  
Electron Paramagnetic

AbstractElectrically detected magnetic resonance (EDMR) has been used to study carrier recombination in GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy. The spin dependent photoconductivity signals depend strongly on the electrical contact properties. Using silver paste contacts a narrow (18 G) resonance located at g = 2.001 is observed. It has been previously attributed to surface defects on GaAs. Using alloyed In-contacts other signals are detected. The dominant resonance observed at 9 GHz has an isotropic g-value of g = 1.99 with a halfwidth of 200 G and is therefore assigned to Cr4+. Other signals of considerably lower intensity are explained by the well known electron paramagnetic resonance (EPR) properties of the Gai-interstitial and the AsGa-antisite defects. EDMR performed at 34 GHz allows the experimental separation of the two sets of hyperfine lines.

Defects in HfO2 Based Dielectric Gate Stacks

2009 ◽  
Vol 1155 ◽  
Author(s):  
Patrick M. Lenahan ◽  
Jason T. Ryan ◽  
Corey J. Cochrane ◽  
John F. Conley
Keyword(s):  
Magnetic Resonance ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Paramagnetic Resonance ◽  
Oxygen Interstitial ◽  
Interface Defects ◽  
Interstitial Defects ◽  
Electrically Detected Magnetic Resonance ◽  
Multiple Interface ◽  
Electron Paramagnetic

AbstractWe report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

2010 ◽  
Vol 645-648 ◽  
pp. 527-530 ◽  
Author(s):  
Corey J. Cochrane ◽  
Brad C. Bittel ◽  
Patrick M. Lenahan ◽  
Jody Fronheiser ◽  
Kevin Matocha ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Close Similarity ◽  
Paramagnetic Resonance ◽  
Mos Devices ◽  
Electrically Detected Magnetic Resonance ◽  
Electron Paramagnetic

We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 145-148 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
K. Lott ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Fermi Level ◽  
Point Defects ◽  
Interface Properties ◽  
Hydrogen Ions ◽  
Paramagnetic Resonance ◽  
Proposed Model ◽  
P Type ◽  
Electron Paramagnetic

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.

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