Defects In Erbium/Oxygen Implanted Silicon

1996 ◽  
Vol 442 ◽  
Author(s):  
X. Duan ◽  
J. Palm ◽  
B. Zheng ◽  
M. Morse ◽  
J. Michel ◽  
...  

AbstractA systematic study of defects in the Er/O implanted silicon was conducted using TEM, HRTEM and SIMS. Defect-free material was obtained after the annealing of 400 keV Er+ implanted (100)Si. In sharp contrast, several forms of secondary defects consisting of dislocations, dislocation loops and precipitates were induced upon annealing at different temperatures in the 4.5 MeV implanted (100)Si sample. The isothermal evolution of the defects and reactions between dopants and defects were studied. Oxygen tends to segregate into the dislocation loop zones, where platelet precipitates with habit planes of {111} were found. Following dissociation of oxygen and erbium, plate-like Er precipitates were generated, which are most likely ErSi2 with a habit plane of {111}

1991 ◽  
Vol 235 ◽  
Author(s):  
H. Suematsu ◽  
T. E. Mitchell ◽  
T. Iseki ◽  
T. Yano

ABSTRACTPressureless-sintered AlN was neutron irradiated and the hardness change was examined by Vickers indentation. The hardness was increased by irradiation. When the samples were annealed at high temperature, the hardness gradually decreased. Length was also found to increase and to change in the same way as the hardness. A considerable density of dislocation loops still remained, even after the hardness completely recovered to the value of the unirradiated sample. Thus, it is concluded that the hardening in AlN is caused by isolated point defects and small clusters of point defects, rather than by dislocation loops.Hardness was found to increase in proportion to the length change. If the length change is assumed to be proportional to the point defect density, then the curve could be fitted qualitatively to that predicted by models of solution hardening in metals. Furthermore, the curves for three samples irradiated at different temperatures and fluences are identical. There should be different kinds of defect clusters in samples irradiated at different conditions, e.g, the fraction of single point defects is the highest in the sample irradiated at the lowest temperature. Thus, hardening is insensitive to the kind of defects remaining in the sample and is influenced only by those which contribute to length change.


2014 ◽  
Vol 587-589 ◽  
pp. 1281-1285
Author(s):  
Xu Dong Li

Research shows that rheological property of asphalt relates directly to pavement property. To get a grip on the influence of different factors on rheological property of high modulus asphalt, this paper makes a systematic study of different temperatures, loading frequency, strain 70# base asphalt and rheological property of high modulus asphalt by the method of DSR measurement, and compared their anti-fatigue performance. The experiment’s results shows that high-modules asphalt has a low sensitivity of temperature. Compare with the base asphalt, the high-modules modified asphalt’s G*/sinδ will have a slower decrease rapid under the condition of temperature increase. Both asphalt’s G*/sinδ would decrease with the decrease of load frequency, high-modules asphalt has a higher G*/sinδ than base asphalt especially at the high temperature and low frequency.


1997 ◽  
Vol 490 ◽  
Author(s):  
Jing-Hong Li ◽  
Kevin S. Jones

ABSTRACTThe annealing kinetics of implant damage in Si+ implanted Si has been investigated using in-situ and ex-situ annealing of transmission electron microscopy (TEM) samples prepared prior to annealing. The defect evolution at 800°C was studied for a Si wafer implanted with Si+ at 100keV to a dose of 2×1014 cm-2. This implant was above the sub-threshold loop formation threshold allowing one to study simultaneously the {311} defect dissolution and dislocation loop nucleation and growth. In order to study the effect on the defect evolution of using a thin sample for an in-situ annealing experiment, a pair of samples, one thick and one thinned into a TEM sample, were annealed in a furnace simultaneously. It was found that the presence of a second surface 2000Å below the implant damage did not affect the extended defect evolution. For the in-situ annealing study it was found that the {311} dissolution process and sub-threshold dislocation loop formation process was not affected by the TEM electron beam at 160kV as long as an 800°C furnace pre-anneal was done prior to in-situ annealing. The dissolution rate of the {311} defects was used to confirm the TEM holder furnace temperature. The results of both the in-situ the {311} defects is released during the 311 dissolution process and 30% comes to reside in dislocation loops. Thus, the loops appear to contain a significant fraction of the total interstitial concentration introduced by the implant.


1997 ◽  
Vol 490 ◽  
Author(s):  
P. S. Plekhanov ◽  
U. M. Gösele ◽  
T. Y. Tan

ABSTRACTNucleation of voids and vacancy-type dislocation loops in Si under vacancy supersaturation conditions has been considered. Based upon nucleation barrier calculations, it has been found that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy values of Si vacancy formation. The process of void growth due to precipitation of vacancies has been numerically simulated. Comparing results of the nucleation and the growth modeling and taking into account the competition between the two processes, the limited time available, and the crystal cooling rate after growth, it has been shown that homogeneous nucleation of voids to experimentally observed densities and void growth to observed sizes is possible if enthalpy of Si vacancy formation is within the range of 2.9 to 3.6 eV with the nucleation temperature in the range of 980–1080 °C.


1996 ◽  
Vol 439 ◽  
Author(s):  
P. Thevenard ◽  
M. Beranger ◽  
B. Canut ◽  
S. M. M. Ramos ◽  
N. Bonardi ◽  
...  

AbstractMgO and LiNbO 3 single crystals were bombarded with GeV swift heavy ions (Pb, Gd) and 30MeV C60 clusters to study the damage production induced by giant electronic processes at stopping power up to 100keV/nm. The defect creation was characterized by optical absorption, transmission electron microscopy (TEM) and Rutherford backscattering spectrometry in channeling geometry (RBS-C). In MgO point defects (F type centers) and extended defects (dislocation loops) were created by ionization processes in addition to those associated with nuclear collisions. The F-center concentration induced by electronic energy excitations was studied at different temperatures and as a function of the particle electronic energy losses. TEM revealed that dislocation loops were produced close to the particle trajectories and amorphization was never observed. On the opposite, in LiNbO3 continuous amorphous tracks were evidenced above a threshold near 5keV/nm. The dependance of this effects with various solid state parameters will be discussed.


2022 ◽  
Vol 1213 (1) ◽  
pp. 012006
Author(s):  
M P Kashchenko ◽  
N M Kashchenko ◽  
V G Chashchina

Abstract The dynamic theory of martensitic transformations (MT) considers the formation of habit planes of martensite crystals as a consequence of the propagation of a controlling wave process (CWP). The general ideology makes it possible, by comparing the observed habits with calculations of the elastic fields of defects (as a rule, dislocations), to identify nucleation centers. In a number of cases (In-Tl alloys, Ni50Mn50 alloys, Heusler alloys …) under MT in the shape memory alloys, {110} habits are observed (in the basis of the initial cubic phase), which often have a fine twin structure with twin boundaries of the same type. This highly symmetric structure is described by the CWP containing longitudinal waves (both relatively long-wavelength ℓ and short-wavelength s) propagating along the 4-order symmetry axes. In this paper, it is shown that such habits are associated with rectilinear segments of dislocation loops with directions Λ along <001> and Burgers vectors along <010> (or <110>) orthogonal to Λ, both for sliding and for prismatic loops. The tetragonality, the relative volume change during the MT, and the dependence of the start temperature M s on changes in the concentration of alloy components are also briefly discussed.


Author(s):  
Wei-Kuo Wu

It is well known that both the burgers vector and the habit plane of dislocation loops are needed in order to determine their type, e.g. vacancy or interstitial. The conventional bright field and dark field techniques give a dislocation image width ⋍300Å or an image shift from the core position even larger than the true size of a small dislocation loop. This makes loop type determination very difficult.In this paper, the newly developed weak beam dark field technique, which decreases the effective extinction distance, ξg, has been used to reduce the dislocation image width (∽1/3 ξg), so that the shape (habit plane) and loop types of small dislocation loops (<500Å) can be determined unambiguously.


1996 ◽  
Vol 438 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for s{311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.


In natural diamonds of optical classification type la , nitrogen is the major identified impurity and is distributed mainly in point defects known as A defects (probably a pair of nitrogen atoms substituting for a pair of adjacent carbon atoms) and B defects (probably four substituted nitrogen atoms tetrahedrally surrounding a carbon vacancy), and also in the electron-microscopically visible platelet precipitates on {100}. This paper is concerned with other electron-microscopically detectable defects, discovered by R. F. Stephenson (Ph.D. thesis, University of Reading (1977)), that lie in {100} planes in circumstances strongly suggesting that they result from the decomposition of platelets. High-resolution electron microscopy shows these defects to be {111}-faceted cavities. They behave as pure phase-contrast objects whose interior density does not exceed about one-third that of the diamond matrix: we call them ‘voidites’. The experimental background to voidite observation is reviewed, including electron-microscopic measurements on normal {100} platelets and models of their structure, and the optical, X-ray diffraction and cathodoluminescence evidence for unusually large platelets whose presence, together with a relative richness in B defects, indicates an environment in which voidites are likely to be discovered. Almost all observed voidites are confined to sheets strictly parallel to {100}. Some voidite sheets occur in ‘ partial platelets’, where they replace part of the original area of normal platelet. Other voidite sheets occur within dislocation loops whose size and shape are similar to those of the peripheries of normal platelets in the specimen. Voidites occur in a wide range of sizes. The largest equiaxed voidites observed measure about 10 nm between opposite {111} facets, and the smallest resolved about 0.5 nm. Many voidites are elongated in one of the <110> directions in the plane of the voidite sheet: the most highly elongated voidites seen approach 100 nm in length, with diameters of a few nanometres. Variations in size, shape and number density of voidites, together with many other characteristics relevant to the microscopic processes of voidite formation, are discussed in detailed descriptions of about 40 voidite sheets occurring in partial platelets and dislocation loops in two diamond specimens. One specimen was free from both grown-in dislocations and dislocations associated with plastic deformation. It contained zones of highly elongated platelets and it appeared that transformation of a platelet into a voidite sheet surrounded by a dislocation loop was triggered by the mutual very close approach of platelets. The second voidite-containing specimen had suffered plastic deformation at some stage in its history, but did not exhibit direct evidence that glide dislocations had triggered the transformation. The Burgers vectors of 24 dislocation loops enclosing voidite sheets in the second specimen were determined. Twelve were of normal ½<110> type having a component ½a 0 normal to the voidite sheet, and twelve were non-primitive, the Burgers vector being a 0 normal to the voidite sheet (a 0 is the diamond face-centred cubic (fcc) unit cell edge). The volumes of over 2000 individual voidites, representing all or major parts of 12 voidite sheets, have been measured. Values found for the ratio ∑ V /Aa 0 (where ∑ V is the aggregate voidite volume in a sheet area A ) averaged about unity for 9 sheets of generally similar, voidite-rich appearance. Other sheets are poorer in voidites of measurable dimensions: the ratios for two such sheets averaged 0.25. In the concluding analysis, a reaction involving A and B point defects is proposed for the production of platelets. Other reactions including voidites (but no dislocations) are suggested in which both platelet production and elimination might occur. For the dominating reaction, when a platelet is replaced by a voidite sheet surrounded by an interstitial dislocation loop, models are developed for the cases when the Burgers vector component perpendicular to the loop is either a 0 or ½ a 0 , with the assumption that the platelet nitrogen is dispersed partly into B defects and partly into the voidites. The predicted values of ∑ V /Aa 0 come out as about unity and as 0.25 (or lower) for the larger and smaller Burgers vectors, respectively.


1994 ◽  
Vol 373 ◽  
Author(s):  
D.T. Hoelzer ◽  
F. Ebrahimi

AbstractIron alloys containing copper and nickel were irradiated at 288°C to a fluence of 4.63 × 1019 neutrons/cm2. Neutron irradiation produced defects which were observable by TEM in all of the iron alloys studied. The TEM analysis of the defects showed them to be interstitial dislocation loops with a < 100 > and a/2 < 111 > Burgers vectors. The size, the number density, and the Burgers vector of dislocations were affected by the alloy composition. The addition ofcopper and nickel decreased the dislocation loop size and increased the fraction of a/2 < 111 > loops. No voids or vacancy loops were observed in the irradiated iron alloys. The results are discussed in terms of dislocation loop nucleation and growth.


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