Dark Current Spectroscopy Of Metals In Silicon

1996 ◽  
Vol 442 ◽  
Author(s):  
William C. Mccolgin ◽  
James P. Lavine ◽  
Charles V. Stancampiano
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Dark Current ◽  
Room Temperature ◽  
Image Sensors ◽  
Active Iron ◽  
Metal Atoms ◽  
Individual Metal

AbstractDark current spectroscopy (DCS) is used to identify the signature of metals that generate dark or leakage current in silicon image sensors. Individual metal atoms or defects are detected by DCS on a pixel-by-pixel basis. DCS is applied here to show how the number of electrically active iron atoms in a pixel changes with light and with low-temperature anneals. The measurements explore the dissociation and association of iron-boron pairs and the diffusion of iron near room temperature.

ITO/a-SiNx:H/a-Si:H Photodiode with Enhanced Photosensitivity and Reduced Leakage Current Using Polycrystalline ITO Deposited at Room Temperature

2000 ◽  
Vol 609 ◽  
Author(s):  
S. Tao ◽  
Q. Ma ◽  
D. Striakhilev ◽  
A. Nathan
Keyword(s):  
Leakage Current ◽  
Dark Current ◽  
Room Temperature ◽  
Dynamic Range ◽  
Transport Model ◽  
Measurement Data ◽  
Mis Structure ◽  
Defect States ◽  
Large Area ◽  
Density Of Defect States

ABSTRACTWe report an ITO/a-SiNx:H/a-Si:H MIS photodiode structure based on room temperature deposition of optically transparent polycrystalline ITO for applications in large area optical and x-ray imaging. The photodiode structure exhibits device characteristics with reduced leakage current and enhanced photosensitivity giving rise to a hundred-fold improvement in dynamic range. This notable improvement in performance is believed to be due to the reduced diffusion of oxygen from the ITO to the a-Si:H layer, and thus reducing the density of defect states inside the a-Si:H layer. The behavior of photo and dark current is consistent with an elaborate transport model for the Schottky barrier. The model agrees reasonably well with measurement data for the dark current and provides a consistent picture in terms of the photo current behavior in the MIS structure, where the insulating layer serves to reduce the oxygen diffusion.

Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

2003 ◽  
Vol 798 ◽  
Author(s):  
G. C. Chi ◽  
J. K. Sheu ◽  
M. L. Lee ◽  
C. J. Kao ◽  
Y. K. Su ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dark Current ◽  
Reverse Bias ◽  
Incident Light ◽  
Response Speed ◽  
Light Wavelength ◽  
Cap Layer ◽  
Incident Light Wavelength

ABSTRACTAlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With incident light wavelength of 320 nm and a –1 V reverse bias, the measured responsivity was around 0.03 A/W and 0.015 A/W for samples with and without the LT GaN cap layer, respectively. The response speed of the sample A was also found to be faster.

Leakage current modeling of test structures for characterization of dark current in CMOS image sensors

2003 ◽  
Vol 50 (1) ◽  
pp. 77-83 ◽  
Author(s):  
N.V. Loukianova ◽  
H.O. Folkerts ◽  
J.P.V. Maas ◽  
D.W.E. Verbugt ◽  
A.J. Mierop ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dark Current ◽  
Image Sensors ◽  
Cmos Image Sensors

Survival of mouse blastocysts after low-temperature preservation under high pressure

2004 ◽  
Vol 52 (4) ◽  
pp. 479-487 ◽  
Author(s):  
Cs. Pribenszky ◽  
M. Molnár ◽  
S. Cseh ◽  
L. Solti
Keyword(s):  
Phase Transition ◽  
Hydrostatic Pressure ◽  
Low Temperature ◽  
High Hydrostatic Pressure ◽  
Room Temperature ◽  
Freezing Point ◽  
Significant Loss ◽  
Embryo Cryopreservation ◽  
Subzero Temperatures ◽  
Survival Capacity

Cryoinjuries are almost inevitable during the freezing of embryos. The present study examines the possibility of using high hydrostatic pressure to reduce substantially the freezing point of the embryo-holding solution, in order to preserve embryos at subzero temperatures, thus avoiding all the disadvantages of freezing. The pressure of 210 MPa lowers the phase transition temperature of water to -21°C. According to the results of this study, embryos can survive in high hydrostatic pressure environment at room temperature; the time embryos spend under pressure without significant loss in their survival could be lengthened by gradual decompression. Pressurisation at 0°C significantly reduced the survival capacity of the embryos; gradual decompression had no beneficial effect on survival at that stage. Based on the findings, the use of the phenomena is not applicable in this form, since pressure and low temperature together proved to be lethal to the embryos in these experiments. The application of hydrostatic pressure in embryo cryopreservation requires more detailed research, although the experience gained in this study can be applied usefully in different circumstances.

Photophysical properties of N719 and Z907 dyes, benchmark sensitizers for dye-sensitized solar cells, at room and low temperature

2021 ◽  
Vol 23 (10) ◽  
pp. 6182-6189
Author(s):  
Dariusz M. Niedzwiedzki
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Optical Spectroscopy ◽  
Room Temperature ◽  
Photophysical Properties ◽  
Dye Sensitized Solar Cells ◽  
Time Resolved ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Photophysical properties of N719 and Z907, benchmark Ru-dyes used as sensitizers in dye-sensitized solar cells, were studied by static and time-resolved optical spectroscopy at room temperature and 160 K.

Transition Insulator-Metal and Antiferromagnetic-Paramagnetic Cu Doped in La0.47Ca0.53MnO3

2015 ◽  
Vol 1123 ◽  
pp. 73-77 ◽  
Author(s):  
Yohanes Edi Gunanto ◽  
K. Sinaga ◽  
B. Kurniawan ◽  
S. Poertadji ◽  
H. Tanaka ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Magnetic Structure ◽  
Room Temperature ◽  
Paramagnetic Phase ◽  
Perovskite Manganites ◽  
Antiferromagnetic Phase ◽  
Temperature Transition ◽  
Cu Doping ◽  
Metal State

The study of the perovskite manganites La0.47Ca0.53Mn1-xCuxO3 with x = 0, 0.06, 0.09, and 0.13 has been done. The magnetic structure was determined using high-resolution neutron scattering at room temperature and low temperature. All samples were paramagnetic at room temperature and antiferromagnetic at low temperature. Using the SQUID Quantum Design, the samples showed that the doping of the insulating antiferromagnetic phase La0.47Ca0.53MnO3 with Cu doping resulted in the temperature transition from an insulator to metal state, and an antiferromagnetic to paramagnetic phase. The temperature transition from an insulator to metal state ranged from 23 to 100 K and from 200 to 230 K for the transition from an antiferromagnetic to paramagnetic phase.

Molecule-Based Magnets—An Overview

MRS Bulletin ◽  
2000 ◽  
Vol 25 (11) ◽  
pp. 21-30 ◽  
Author(s):  
Joel S. Miller ◽  
Arthur J. Epstein
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Magnetic Ordering ◽  
Low Density ◽  
Materials Properties ◽  
The Common ◽  
New Processing ◽  
Very High

Molecule-based magnets are a broad, emerging class of magnetic materials that expand the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal and rare-earth-based magnets can be found in molecule-based magnets. Although discovered less than two decades ago, magnets with ordering temperatures exceeding room temperature, very high (∼27.0 kOe or 2.16 MA/m) and very low (several Oe or less) coercivities, and substantial remanent and saturation magnetizations have been achieved. In addition, exotic phenomena including photoresponsiveness have been reported. The advent of molecule-based magnets offers new processing opportunities. For example, thin-film magnets can be prepared by means of low-temperature chemical vapor deposition and electrodeposition methods.

Sign in / Sign up

Export Citation Format

Share Document