Surface Roughening During Titanium Silicide Formation: a Comparison Between Si(100) and Poly-Si Substrates

1996 ◽  
Vol 440 ◽  
Author(s):  
C. Lavoie ◽  
R. Martel ◽  
C. Cabral ◽  
L. A. Clevenger ◽  
J. M. E. Harper
Keyword(s):  
Light Scattering ◽  
Titanium Silicide ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Elastic Light Scattering ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Fourier Filtering ◽  
Ti Films

AbstractWe demonstrate that the formation of TiSi2 for Ti films deposited on undoped Si(100) substrates leads to rougher surfaces than for Ti films deposited on undoped poly-Si substrates. The successive formations of TiSi2, C49 (high resistivity) and C54 (low resistivity) phases from titanium films deposited on either Si(100) or poly-Si substrates were monitored in situ during rapid thermal annealing using elastic light scattering, x-ray diffraction and resistance measurements. For both types of substrates, the roughening occurs only during the formation of the first TiSi2, phase (C49) by light scattered from lateral length scales of ˜0.5 μm. Atomic force microscopy (AFM) images. quantified using Fourier filtering, are consistent with the light scattering results.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Investigation of Structural and Mechanical Properties of Laser Deposited Microlaminate Hard Coatings

2001 ◽  
Vol 697 ◽  
Author(s):  
Manoj Radder ◽  
A.K. Sikder ◽  
Ashok Kumar
Keyword(s):  
Mechanical Properties ◽  
Boron Carbide ◽  
Composite Coatings ◽  
Bottom Layer ◽  
Hard Coatings ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Substrate Temperatures

Nitride and carbide are superhard material with a high potential for applications in different fields. A new group of coatings are the multilayered/microlaminate coatings, which have shown very interesting properties. Single and microlaminate films were coated on Silicon (Si) substrates using pulsed laser deposition (PLD) technique. Films were deposited at different substrate temperatures in order to study the microstructure evolution and their effect on the mechanical properties of these microlaminate films. Structure of the films was characterized by x-ray diffraction (XRD) technique. Surface morphology and roughness of the films were investigated using atomic force microscopy (AFM). Hardness and modulus of the films were investigated using nanoindentation technique. It has been demonstrated that using boron carbide as a bottom layer increases the hardness and Young's modulus values of carbide composite coatings. Microlaminates of boron carbide/titanium carbides have shown higher hardness and modulus as compared to the microlaminates of nitride coatings.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Effects of Annealing on Pulsed Laser Deposited TiO2 Thin Films

2013 ◽  
Vol 446-447 ◽  
pp. 306-311 ◽  
Author(s):  
Sudhanshu Dwivedi ◽  
Somnath Biswas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Morphological Studies ◽  
Atomic Force ◽  
Deposited Films ◽  
Type Crystal

Mixed phase TiO2 thin films of rutile and anatase type crystal orientations were deposited on Si substrates by pulsed laser deposition (PLD) technique. When annealed at 800°C at 1 mbar oxygen pressure for 3 h, the deposited films transform into a single phase of rutile type. Structural and morphological studies of the as-deposited and annealed films were performed with X-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR), Raman spectroscopy, and atomic force microscopy (AFM). Photoluminescence (PL) spectroscopy was used for optical characterization of the annealed thin films.

Fabrication and Comparison of Self-Organized Ag and Au Nanodots on Ti/MgO(001) Substrates

2020 ◽  
Vol 20 (5) ◽  
pp. 3231-3238
Author(s):  
Woo-Seong Kim ◽  
Kwang-Hun Oh ◽  
Tae-Hwan Kim ◽  
Seung-Hyun Shin ◽  
Tae-Woong Um ◽  
...  
Keyword(s):  
Seed Layer ◽  
X Ray Diffraction ◽  
Optical Absorbance ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Afm Analysis ◽  
The Difference ◽  
Au Nanodots ◽  
Ti Films

We analyze and compare the differences in the dewetting phenomena and crystal structure between Ag(5.0 nm) and Au(5.0 nm) layers deposited on a Ti(1.0 nm) seed layer coated onto a MgO(001) substrate. The samples are deposited at room temperature and annealed at 350–450 °C for 5 h. The surfaces of both Ag/Ti and Au/Ti films exhibit a completely separated island structure, subsequently leading to the formation of a nanodot array after annealing. Based on atomic force microscopy (AFM) analysis, we conclude that the dewetting progression speed of Ag/Ti films is higher than that of Au/Ti films. Based on X-ray diffraction (XRD) results, the Ti thin film acts as a seed layer, assisting the epitaxial growth of fcc-Ag(001) nanodots on the MgO(001) substrate, whereas in the case of Au/Ti, the Au layer grows non-epitaxially on the MgO(001) substrate, which is related to the difference in the surface energies of Ag and Au. Furthermore, the optical absorbance spectra of the self-organized Ag and Au nanodots with the Ti seed layer are obtained in the visible light range and the optical properties of Ag and Au nanodots are compared.

Influence of Ammonia on the Fabrication of Aligned Carbon Nanotubes Using Thermal CVD

2011 ◽  
Vol 467-469 ◽  
pp. 312-315
Author(s):  
Gang Li ◽  
Wen Ming Cheng
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Vertical Alignment ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Aligned Carbon Nanotubes ◽  
20 Nm

Ultra-thin (20 nm) nickel catalyst films were deposited by sputtering on SiO2/Si substrates. At the pretreatments, ammonia (NH3) was conducted for different time in a thermal chemical vapor deposition (CVD) system. Pretreated samples were characterized using atomic force microscopy (AFM). After the pretreatment, acetylene was introduced into the chamber for 10 min, samples were characterized using scanning electron micrograph (SEM) and X-ray diffraction (XRD). It was concluded that NH3 pretreatment was very crucial to control the surface morphology of catalytic metals and thus to achieve the vertical alignment of carbon nanotubes (CNTs). With higher density of the Ni particles, better alignment of the CNTs can be obtained due to steric hindrance effect between neighboring CNTs.

Light Scattering Study of the Evolution of the Surface Morphology During Growth of Ingaas on GaAs

1994 ◽  
Vol 375 ◽  
Author(s):  
C. Lavoie ◽  
B. Haveman ◽  
E. Nodwell ◽  
T. Pinnington ◽  
T. Tiedje ◽  
...  
Keyword(s):  
Light Scattering ◽  
Surface Morphology ◽  
Ex Situ ◽  
Molecular Beam Epitaxy Growth ◽  
Elastic Light Scattering ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scattering Study ◽  
Good Agreement

AbstractIn-situ elastic light scattering is used to measure the evolution of the surface morphology of InxGa1−xAs films during molecular beam epitaxy growth on GaAs substrates. The in-situ measurements are compared with ex-situ measurements of the surface morphology on quenched films by optical scatterometry and atomic force microscopy (AFM). The AFM results are in good agreement with the rms roughness obtained from light scattering and both techniques detect the onset of misfit dislocation formation in this system.

scholarly journals Graphene Langmuir-Schaefer films Decorated by Pd Nanoparticles for NO2 and H2 Gas Sensors

2019 ◽  
Vol 19 (2) ◽  
pp. 64-69 ◽  
Author(s):  
Dmytro Kostiuk ◽  
Stefan Luby ◽  
Peter Siffalovic ◽  
Monika Benkovicova ◽  
Jan Ivanco ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Pd Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Long Term Stability ◽  
Atomic Force ◽  
Few Layer Graphene

Abstract NO2 and H2 gas sensing by few-layer graphene (FLG) were studied in dependence on the annealing and decoration of graphene by palladium nanoparticles (NPs). Graphene was deposited onto SiO2 (500 nm)/Si substrates by a modified Langmuir-Schaefer technique. A solution of FLG flakes in 1-methyl-2-pyrrolidone was obtained by a mild sonication of the expanded milled graphite. FLG films were characterized by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and the Brunnauer-Emmett-Teller method. Average FLG flake thickness and lateral dimension were 5 nm and 300 nm, respectively. Drop casting of Pd NP (6–7 nm) solution onto FLG film was applied to decorate graphene by Pd. The room temperature (RT) resistance of the samples was stabilized at 15 kΩ by vacuum annealing. Heating cycles of FLG film revealed its semiconducting character. The gas sensing was tested in the mixtures of dry air with H2 gas (10 to 10 000 ppm) and NO2 gas (2 to 200 ppm) between RT and 200 °C. The response of 26 % to H2 was achieved by FLG with Pd decoration at 70 °C and 10 000 ppm of H2 in the mixture. Pure FLG film did not show any response to H2. The response of FLG with Pd to 6 ppm of NO2 at RT was ≥ 23 %. It is 2 times larger than that of the pure FLG sample. Long term stability of sensors was studied.

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 201-204 ◽  
Author(s):  
Christian Förster ◽  
Volker Cimalla ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Gas Phase ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

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