Studies of Interface and Surface Structures of BaTiO3 Thin Films Grown on SrTiO3 (001) Substrates by Mbe

1996 ◽  
Vol 440 ◽  
Author(s):  
Hisashi Shigetani ◽  
Kazuyoshi Kobayashi ◽  
Masayuki Fujimoto ◽  
Wataru Sugimura ◽  
Yoshio Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Lattice Distortion ◽  
Film Growth ◽  
High Energy ◽  
Adsorbed Oxygen ◽  
Diffraction Reflection ◽  
Ion Scattering ◽  
X Ray ◽  
Transmission Electron

AbstractWe studied a lattice distortion and relaxation of BaTiO3(BT) thin films grown on SrTiO3 (001) substrates(ST) by a molecular beam epitaxy method using an oxygen radical source RT were prepared by alternately deposition of BaO and TiO2 layers, and the structure of the thin films was evaluated by X-ray diffraction, reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, coaxial impact collision ion scattering spectroscopy and X-ray photoelectron spectroscopy The lattice constants of the films varied with distance from the interface of BT and ST It was found that lattice distortion and relaxation of BT On the other hand, the surface analysis indicated that adsorbed oxygen was enriched on the BaO-terminated surface in comparison with the TiO2-terminated surface Then we proposed new mechanism of BT thin film growth with adsorbed oxygen.

GROWTH AND STRUCTURE OF hcp Ti FILMS ON Al(111) SURFACES

1999 ◽  
Vol 06 (05) ◽  
pp. 775-780 ◽  
Author(s):  
Y. W. KIM ◽  
G. A. WHITE ◽  
N. R. SHIVAPARAN ◽  
M. A. TETER ◽  
R. J. SMITH
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Three Dimensional ◽  
High Energy ◽  
Low Energy ◽  
Ion Scattering ◽  
Island Growth ◽  
X Ray ◽  
Low Energy Ion Scattering ◽  
Ti Films

The structure of thin Ti films grown on Al(111) surfaces at room temperature has been studied using high energy ion scattering/channeling (HEIS), X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), low energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD). Our results show that Ti grows in the SK mode on the Al(111) surface. Ti atoms form a two-dimensional overlayer up to a deposition of about 2 ML Ti, followed by three-dimensional island growth with additional Ti deposition. The Ti islands cover the surface completely at about 12 ML of Ti deposition. XPD results show that the Ti overlayer has a well-ordered hcp Ti(0001) structure on the fcc Al(111) surface, in remarkable contrast to the fcc Ti film growth observed on Al(001) and Al(110) surfaces.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

The location and effects of Si in (Ti1–xSix)Ny thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2483-2498 ◽  
Author(s):  
Axel Flink ◽  
Manfred Beckers ◽  
Jacob Sjölén ◽  
Tommy Larsson ◽  
Slawomir Braun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Arc Evaporation ◽  
Annealing Experiments ◽  
Tissue Phase

(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

Epitaxy of 3d Metals on Semiconductors

1998 ◽  
Vol 05 (01) ◽  
pp. 273-278 ◽  
Author(s):  
Xiaofeng Jin
Keyword(s):  
Photoelectron Spectroscopy ◽  
Critical Role ◽  
High Energy ◽  
Interface Structure ◽  
High Energy Electron ◽  
X Ray ◽  
3D Metals ◽  
Transmission Electron ◽  
Lattice Mismatched Epitaxy ◽  
Metal Phases

Growth of fcc Mn on GaAs(001), as an example of the lattice-mismatched epitaxy of 3d metals on semiconductors, has been studied using reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) and the high resolution transmission electron microscope (HRTEM). The result shows that the interface structure plays a critical role in the epitaxial growth of 3d metals on semiconductors. A new recipe is proposed to search for more epitaxially grown 3d metal phases.

Nanostructure evolution and properties of two-phase nc-Ti(C, N)/a-(C, CNx) nanocomposites by high-resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy

2007 ◽  
Vol 22 (9) ◽  
pp. 2460-2469 ◽  
Author(s):  
Y.H. Lu ◽  
Y.G. Shen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Two Phase ◽  
X Ray ◽  
Transmission Electron

High-resolution transmission electron microscopy, x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy were used to study phase configuration and nanostructure evolutions of Ti–Cx–Ny thin films with different amounts of C incorporation. It was found that the atomic ratio of (C + N)/Ti played a crucial role in phase configuration and nanostructure evolutions as well as mechanical behaviors. When the ratio was less than one unit, a nanocrystalline (nc-) Ti(C, N) solid solution was formed by way of dissolution of C into TiN lattice. When this dissolution reached saturation, precipitation of a small amount of amorphous (a-) C phase along nc-Ti(C, N) grains was followed with more C incorporation. Further increase of C content (up to ∼19 at.% C) made the amorphous phase fully wet nanocrystallites, which resulted in the formation of two-phase nanocomposite thin films with microstructures comprising of ∼5 nm nc-Ti(C,N) crystallites separated by ∼0.5 nm a-(C, CNx) phase. Thicker amorphous walls and smaller sized grains were followed when the C content was further increased, accompanying with the formation of some disorders and defects in nc-grains and amorphous matrices. When the C content was increased to ∼48 at.%, 1–3 nm nanocrystallites with an average size of ∼2 nm were embedded into amorphous matrices. Both microhardness and residual compressive stress values were increased with increase of the atomic ratio in solid solution thin films when the atomic ratio value was less than one unit. Their maximums were obtained at stiochiometry nc-Ti(C,N) solid solution. Enhancement of hardness values was attributed to solid solution effect.

Effect of Sputtering Input Power of Co on Structure and Magnetic Properties of Fe-Co-N Thin Films

2009 ◽  
Vol 79-82 ◽  
pp. 635-638 ◽  
Author(s):  
Xin Wang ◽  
Hui Jia ◽  
Wei Tao Zheng ◽  
Wei Xu ◽  
Bei Hong Long
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Quantum Interference ◽  
Input Power ◽  
Superconducting Quantum Interference Device ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Composition Structure

Fe-Co-N thin films with various Co content were synthesized on Si (111) substrate using facing-target magnetron sputtering by changing sputtering input power on Co target. During deposition, the input power on Fe target was kept at 160 W. The composition, structure, and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and superconducting quantum interference device. XRD and TEM investigations showed that at lower input power of 11.2 W on Co target, the phases in the film were -(Fe,Co)4N and Co3N. Increasing sputtering input power, the content of Co in the film increased. At input power of 14 W, film contained -(Fe,Co)8N phase was produced which exhibited higher saturation magnetization (252.85 Am2/kg) and lower value of coercivity (3.66 kAm-1), corresponded to the 12% content of Co in the film.

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