Grain Growth Behavior During Microwave Annealing of Silicon Nitride
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AbstractA comparative study of grain growth behavior in silicon nitride under conventional and microwave annealing is presented. Microwave annealed specimens showed a faster growth rate as indicated by the quantitative microstructural analysis. The phenomenon was used in combination with seeding techniques to develop a silicon nitride exhibiting a bi-modal microstructure. Microwave annealing was carried out using a microwave radiation frequency of 28 GHz.
1998 ◽
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1996 ◽
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