Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

1996 ◽  
Vol 429 ◽  
Author(s):  
G. Lucovsky ◽  
H. Niimi ◽  
K. Koh
Keyword(s):  
Chemical Vapor Deposition ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Device Reliability ◽  
The Stability ◽  
Improve Device

AbstractThe incorporation of bonded nitrogen into ultra thin SiO2 gate dielectrics has become an important technology issue. Nitrogen atoms bonded in the immediate vicinity of the Si-SiO2 interface improve device reliability in n-channel field effect transistors. N- atom incorporation at the monolayer concentration range has been achieved by remote plasma assisted oxidation in N2O at 300°C. The incorporation mechanism and the stability of bonded-N are discussed.

Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition

2020 ◽  
Vol 67 (4) ◽  
pp. 1839-1844 ◽  
Author(s):  
M. Asghari Heidarlou ◽  
P. Paletti ◽  
B. Jariwala ◽  
J. A. Robinson ◽  
S. K. Fullerton-Shirey ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

scholarly journals Doping free transfer of graphene using aqueous ammonia flow

RSC Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 1127-1131 ◽  
Author(s):  
Morteza Hassanpour Amiri ◽  
Jonas Heidler ◽  
Ahmar Hasnain ◽  
Saleem Anwar ◽  
Hao Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Dirac Point ◽  
Aqueous Ammonia ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Technical Challenge ◽  
Catalytic Chemical Vapor Deposition ◽  
Graphene Layers

The paper addresses the technical challenge of producing doping-free transferred graphene layers produced by catalytic chemical vapor deposition (CVD), thereby preventing uncontrolled shift of the Dirac point in comprising field-effect transistors.

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS2

2016 ◽  
Vol 6 (2) ◽  
pp. 198-204 ◽  
Author(s):  
Dianzhong Wu ◽  
Zhiyong Zhang ◽  
Danhui Lv ◽  
Guoli Yin ◽  
Zhijian Peng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor

Electrical Characteristics of a Chemical Vapor Deposition-Grown MoS2 Monolayer-Based Field Effect Transistor

2020 ◽  
Vol 15 (6) ◽  
pp. 673-678
Author(s):  
Soo-Young Kang ◽  
Gil-Sung Kim ◽  
Min-Sung Kang ◽  
Won-Yong Lee ◽  
No-Won Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Mos2 Monolayer ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are layered two-dimensional (2D) semiconductors and have received significant attention for their potential application in field effect transistors (FETs), owing to their inherent characteristics. Among the various reported 2D TMD materials, monolayer (ML) molybdenum disulfide (MoS2) is being considered as a promising channel material for the fabrication of future transistors with gate lengths as small as ∼1 nm. In this work, we present chemical vapor deposition-grown triangular ML MoS2 with a lateral size of ∼22 μm and surface coverage of ∼47%, as well as a PMMA-based wet transfer process for depositing the as-grown triangular ML MoS2 flakes onto a SiO2 (∼100 nm)/p++-Si substrate. Additionally, we demonstrate the fabrication of an n-type MoS2-based FET device and study its electrical characteristics as a function of the gate voltage. Our FET device shows an excellent on/off ratio of ∼106, an off-state leakage current of less than 10– 12 A, and a field effect mobility of ∼10.4 cm2/Vs at 300 K.

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