Effect of Nitrogen Diffusion in Ti and TiTiN Films for Future DRAM Bit Line Interconnects and Plugs

1996 ◽  
Vol 429 ◽  
Author(s):  
John M. Drynan ◽  
Kuniaki Koyama
Keyword(s):  
Solid Solution ◽  
Gas Phase ◽  
Sheet Resistance ◽  
Solid Phase ◽  
Deposition Process ◽  
Thermal Treatments ◽  
Nitrogen Diffusion ◽  
Materials Properties ◽  
Post Deposition

AbstractThe effects of nitrogen diffusion from both N2 gas phase and TiN solid phase sources on the characteristics of Ti/TiN bilayer and TiN/Ti/TiN trilayer films have been investigated in terms of both materials properties such as resistance, coloration, composition, and crystallinity, and prospective applications such as for DRAM bit line interconnections and contact-hole plugs. Using blank films it has been found, in coincidence with other work, that at the onset of N diffusion and hence low N concentrations within a Ti film, the sheet resistance increases and the Ti layer becomes a solid solution of N in hexagonal Ti. As the concentration increases, the sheet resistance reaches a maximum, after which it decreases abruptly and the structure becomes primarily tetragonal Ti2N phase. At higher concentrations the resistance stabilizes or increases slightly and the structure becomes more cubic TiN phase. Sheet resistances calculated from resistance measurements of Ti and TiN mono- and multilayer conductor lines with and without RTN and RTAr thermal treatments have shown that the conductor lines exhibit similar behavior to the blank films. In comparison with the mon-olayer lines, the multilayer ones are generally lower in resistance and more stable over a wider range of post-deposition process temperatures.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

Validating Soot Models in LES of Turbulent Flames: The Contribution of Soot Subgrid Intermittency Model to The Prediction of Soot Production in an Aero-Engine Model Combustor

2021 ◽  
Author(s):  
Lívia Pereira Tardelli ◽  
Nasser Darabiha ◽  
Denis Veynante ◽  
Benedetta Franzelli
Keyword(s):  
Gas Phase ◽  
Reference Model ◽  
Solid Phase ◽  
Phase Evolution ◽  
Turbulent Flames ◽  
Engine Model ◽  
Aero Engine ◽  
New Strategy ◽  
Parametric Studies ◽  
Soot Model

Abstract Predicting soot production in industrial systems using an LES approach represents a great challenge. Besides the complexity in modeling the multi-scale physicochemical soot processes and their interaction with turbulence, the validation of newly developed models is critical under turbulent conditions. This work illustrates the difficulties in evaluating model performances specific to soot prediction in turbulent flames by considering soot production in an aero-engine combustor. It is proven that soot production occurs only for scarce local gaseous conditions. Therefore, to obtain a statistical representation of such rare soot events, massive CPU resources would be required. For this reason, evaluating soot model performances based on parametric studies, i.e., multiple simulations, as classically done for purely gaseous flames, is CPU high-demanding for sooting flames. Then, a new strategy to investigate modeling impact on the solid phase is proposed. It is based on a unique simulation, where the set of equations describing the solid phase are duplicated. One set accounts for the reference model, while the other set is treated with the model under the scope. Assuming neglected solid phase retro-coupling on the gas phase, the soot scalars from both sets experience the same unique temporal and spatial gas phase evolution isolating the soot model effects from the uncertainties on gaseous models and numerical sensitivities. Finally, the strategy capability is proven by investigating the contribution of the soot subgrid intermittency model to the prediction of soot production in the DLR burner.

Determination of the Force Constants of Non-linear XY2 Molecules in the Gas-Phase by the GF Matrix Method

2004 ◽  
Vol 59 (9) ◽  
pp. 621-622 ◽  
Author(s):  
Fatih Ucun ◽  
Vesile Gūçlü
Keyword(s):  
Gas Phase ◽  
Condensed Phase ◽  
Matrix Method ◽  
Solid Phase ◽  
Force Constants ◽  
Matrix Solution ◽  
The Matrix ◽  
Newton Raphson ◽  
Raphson Method

The force constants of the internal coordinates of nonlinear XY2 molecules in the gas-phase were calculated by using the GF matrix method. The matrix solution was carried out by means a computer program built relative to the Newton-Raphson method and the calculations were listed in a table. The force constants of some molecules in the liquidand solid- phase were also found and compared with these ones, and it was seen that the force constants for more condensed phase are lower as in an agreement with having its lower frequency.

Physical-Chemical Evolution of Hf-aluminates upon Thermal Treatments

2003 ◽  
Vol 765 ◽  
Author(s):  
B. Crivelli ◽  
M. Alessandri ◽  
S. Alberici ◽  
D. Brazzelli ◽  
A. C. Elbaz ◽  
...  
Keyword(s):  
Orthorhombic Phase ◽  
Interface Layer ◽  
Film Structure ◽  
Thermal Treatments ◽  
Tem Analysis ◽  
K Value ◽  
Physical Chemical ◽  
High K ◽  
Post Deposition ◽  
Limited Oxygen

AbstractThis study presents an investigation on physical-chemical stability of (HfO2)x(Al2O3 )1-x alloys upon prolonged post-deposition annealings. Two different Hf-aluminates were deposited by ALCVDTM, containing 34% and 74% Al2O3 mol% respectively. Post-deposition annealings (PDA) were carried out in O2 or N2 atmosphere, at 850°C and 900°C for 30 minutes. Interfacial layer (IL) increase after PDA was detected on all the samples, but with small differences between N2 and O2 treatments. Stack composition was characterized by means of XRR, XRF, RBS and TOF-SIMS. Growth of interface layer was justified by limited oxygen incorporation from external ambient. Silicon diffusion from the substrate into high-k material and aluminum/hafnium redistribution were observed and associated to annealing temperature. XRD and planar TEM analysis evidenced first grain formation and then, in the case of Hf-rich samples, almost complete crystallization. Overall, Hf-aluminates were found to remain XRD amorphous during high temperature prolonged treatments up to 900°C for 74% and 850°C for 34% alloys respectively. Differently from HfO2, (HfO2)0.66(Al2O3 )0.34 alloy was observed to crystallized in orthorhombic phase. Hf-aluminates were also electrically characterized by means of C(V) and I(V) measurements on basic capacitors. Variations in material electrical properties were found consistent with change in physical-chemical film structure. Increase in k value up to 30 was observed on Hf-rich samples crystallized in orthorhombic phase.

Phase Characterization and Grain Size Effects of Nanophase Y2O3, ZrO2 and Y2O3-ZrO2 Composites Produced by the Gas-Phase Condensation Technique

1992 ◽  
Vol 286 ◽  
Author(s):  
C. M. Foster ◽  
G. R. Bai ◽  
J. C. Parker ◽  
M. N. Ali
Keyword(s):  
Grain Size ◽  
Raman Scattering ◽  
Gas Phase ◽  
Size Effects ◽  
Structural Evolution ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanophase Materials ◽  
Phase Characterization

ABSTRACTNanophase (n-) ZrO2 was produced in its pure and partially stabilized form by the gas-phase condensation method. The material was examined by x-ray diffraction and Raman scattering to obtain information on the structural evolution of the material during sintering. Two types of Y2O3 doped ZrO2 nanophase materials were made one by co-deposition of n-Y2O3 and n-ZrO2 in a consecutive manner and the second by mechanically mixing n-Y2O3 and n-ZrO2. We have determined that the co-deposition process is the most effect means of doping the n-ZrO2.

Solid phase characterization and transformation of illite mineral with gas-phase ammonia treatment

2021 ◽  
pp. 127657
Author(s):  
Silvina A. Di Pietro ◽  
Hilary P. Emerson ◽  
Yelena Katsenovich ◽  
Timothy J. Johnson ◽  
Ryan M. Francis ◽  
...  
Keyword(s):  
Gas Phase ◽  
Solid Phase ◽  
Ammonia Treatment ◽  
Phase Characterization
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