Film Crystallographic Texture and Substrate Urface Roughness in Layered Aluminum Metallization

1996 ◽  
Vol 428 ◽  
Author(s):  
K. P. Rodbell ◽  
V. Svilan ◽  
L. M. Gignac ◽  
P. W. Dehaven ◽  
R. J. Murphy ◽  
...  

AbstractMaterial anisotropy implies that many film properties are affected by crystallographic orientation in the growth direction (out-of-plane texture) and / or in the plane of growth (in-plane texture). Physical vapor deposited (PVD) Ti and Al-alloy films deposited on silicon dioxide substrates typically exhibit strong fiber textures in the growth direction with little in-plane-texture observed. The strength of these fiber textures has been found to vary substantially depending on the details of the deposition process(es) and, to a lesser degree, on any post-deposition anneals. In this paper the role of the substrate surface roughness in defining film texture is reported. It was found that the substrate surface roughness determines the overlying film crystallographic orientation for Ti and Ti/AlCu films deposited on various oxides. Furthermore, it was found that the texture of the initial metal “seed” layer defines the texture in subsequently deposited films (texture inheritance). Modifications to the oxide surface which decrease the surface roughness lead to an improved crystallographic texture in Ti, AlCu, Ti/AlCu and Ti/TiN/AlCu films. Film orientation was determined from crystallographic pole figures measured using x-ray diffraction (XRD). The oxide surface roughness was measured using atomic force microscopy (AFM), transmission electron microscopy (TEM) and glancing incidence x-ray reflectivity (GIXR).

2002 ◽  
Vol 16 (06n07) ◽  
pp. 952-957 ◽  
Author(s):  
D. Sheeja ◽  
B. K. Tay ◽  
H. M. Lam ◽  
S. K. Ng

The Co-Cr-Mo alloy is extensively used for tribological applications, including orthopaedic components in total joint replacements. High quality diamond-like carbon (DLC) coatings on metal/alloy substrates are of great interest as they are able to protect them from severe wear and thus prolong the life span of the component. Since the roughness of the metal/alloy varies depending on the applications, a study has been carried out to investigate the effect of substrate surface roughness on the microstructure, sliding life, wear-resistance, coefficient of friction, adhension and hardness of DLC coatings prepared on Co-Cr-Mo alloy substrates under the same deposition condition. The microstructure of the films studied using Raman spectroscopy suggests that the film prepared on a smoother surface contains slightly higher fraction of sp 3 bonded carbon atoms. The characterization using a pin-on-disk tribometer reveals that, the film prepared on the roughest sample (Ra ~ 0.06 μm) exhibits a very short life span of about 20 cycles compared to the film that is prepared on a relatively smoother surface (Ra ~ 0.02 μm), which exhibits a life span of about 340,000 cycles. In order to investigate the origin of this improved property of the DLC film on the smoother surface, adhesive strength and hardness of the films were studied by using a micro-scratch tester and a Nano-indenter, respectively. The results suggest that the film prepared on the smoother surface exhibits better adhesion (higher critical load) and relatively higher hardness.


2010 ◽  
Vol 132 (4) ◽  
Author(s):  
K. N. Prabhu ◽  
G. Kumar

The effects of substrate material, substrate surface roughness, and operating temperature on the wetting behavior of Sn–37Pb, Sn–3.5Ag, and Sn–9Zn eutectic solders on metallic substrates were investigated. Solder spreading kinetics was successfully represented by the exponential power law (EPL): ϕ=exp(−Kτn). The EPL parameter K has the significance of accelerating the kinetics of relaxation while the parameter n represents the resistance to spreading process (spread resistance parameter). EPL parameters exhibited a decreasing trend with an increase in surface roughness. Estimated activation energies for solder spreading were found to be in between those reported for inert and highly reactive spreading systems.


2002 ◽  
Vol 722 ◽  
Author(s):  
Chunming Jin ◽  
Ashutosh Tiwari ◽  
A. Kvit ◽  
J. Narayan

AbstractEpitaxial ZnO films have been grown on Si(111) substrates by employing a AlN buffer layer during a pulsed laser-deposition process. The epitaxial structure of AlN on Si(111) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[111] along the growth direction and ZnO[2 11 0]||AlN[2 11 0]||Si[0 11] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications.


2020 ◽  
Vol 343 ◽  
pp. 136099 ◽  
Author(s):  
Chen Zhao ◽  
Xiaoteng Jia ◽  
Kewei Shu ◽  
Changchun Yu ◽  
Yonggang Min ◽  
...  

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