Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

1996 ◽  
Vol 427 ◽  
Author(s):  
J. Y. Yew ◽  
L. J. Chen ◽  
K. Nakamura
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Stress Measurement ◽  
Deep Submicron ◽  
Film Stress ◽  
Size And Shape ◽  
Thin Film Stress ◽  
Single Orientation

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

Application of direct-write electron-beam lithography for deep-submicron fabrication

1996 ◽  
Author(s):  
Shyi-Long Shy ◽  
Jen Y. Yew ◽  
Kazumitsu Nakamura ◽  
Chun-Yen Chang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Deep Submicron ◽  
Direct Write

A Study of Amorphous Chalcogenides by Electron Microscopy and Analysis

1998 ◽  
Vol 4 (S2) ◽  
pp. 714-715
Author(s):  
A. G. Fitzgerald ◽  
K. Mietzsch
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Diffusion Process ◽  
Electron Beam Lithography ◽  
Interaction Process ◽  
Metal Diffusion ◽  
Process Understanding ◽  
Amorphous Chalcogenides ◽  
Potential Applications ◽  
Beam Interaction

Amorphous chalcogenides films coated with certain metals are known to possess a remarkable sensitivity to radiation. Based on these effects they have found several important applications in the production of microcircuits, e.g. as resists in photo- and electron beam lithography. A variety of chalcogenides in combination with a range of metals has been extensively investigated with regard to potential applications in the fabrication of semiconductor devices.The objectives of the present project are to extend knowledge of the behaviour of amorphous chalcogenides in contact with metals. This includes studying the metal diffusion process, understanding the film-electron beam interaction process and evaluating the potential of the metal lines formed by the electron beam in fabrication of photomasks for the production of higher densities of silicon microcircuits.

Controlled III–V semiconductor cluster nucleation and epitaxial growth via electron‐beam lithography

1995 ◽  
Vol 66 (11) ◽  
pp. 1343-1345 ◽  
Author(s):  
J. W. Sleight ◽  
R. E. Welser ◽  
L. J. Guido ◽  
M. Amman ◽  
M. A. Reed
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Semiconductor Cluster

Effects of Size and Shape of Lateral Confinement on the Formation of NiSi2, CoSi2 and TiSi2 on Silicon Inside Miniature Size Oxide Openings

1996 ◽  
Vol 427 ◽  
Author(s):  
L. J. Chen ◽  
J. Y. Yew ◽  
S. L. Cheng ◽  
K. M. Chen ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Stress Level ◽  
Lateral Confinement ◽  
Size And Shape ◽  
Lower Temperature ◽  
Single Orientation

AbstractThe effects of size and shape of lateral confinement on the formation of NiSi2, CoSi2 and TiSi2 on silicon inside miniature size oxide openings have been investigated. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. C49-C54 TiSi2 transformation was observed to be more difficult on both blank and BF2+ implanted (001)Si inside smaller size oxide openings.

A Study on the Properties of Different IMP Ta, Ta(N) and Multi-Layer Ta/Ta(N) as Diffusion Barriers for Cu Metallization

2001 ◽  
Vol 714 ◽  
Author(s):  
L. He ◽  
C.Y. Li ◽  
Z.Q. Zeng ◽  
J.J. Wu ◽  
Y. Qian ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Stress Measurement ◽  
Diffusion Barriers ◽  
Film Stress ◽  
Failure Behavior ◽  
Film Properties ◽  
X Ray ◽  
Cu Metallization ◽  
Metal Plasma ◽  
Transmission Electron

ABSTRACTWe report a study on the properties of Ionized Metal Plasma (IMP) Ta, Ta(N) and multi-layer Ta/Ta(N) based on a comparative evaluation of their performance as diffusion barriers in Cu based metallization schemes. The film structures used in this study are: IMP Cu(2000Å)/IMP Ta(250Å)/Si; IMP Cu(2000Å)/IMP Ta(N)(250Å)/Si; and IMP Cu(2000Å)/IMP multi-layer Ta/Ta(N)(250Å)/Si. The samples were annealed in N2 ambient at 500 °C, 550°C, 600°C and 650°C, respectively, for 30 minutes. The failure behavior and film properties of different barriers were investigated using MetaPULSE, Film stress measurement (FSM), Four-point probe (FPP), X-ray diffractometry (XRD), Field emission scanning electron microscopy (FESEM) and Transmission electron microscopy (TEM). It has been observed clearly from the sheet resistance measurements that failures of Ta(N) and Ta barriers occurred at 550°C and 600°C respectively, whereas the multi-layer Ta/Ta(N) could still survive from the annealing up to 650°C. Evidence showing the formation of Cu3Si in the failed film stacks was found from XRD spectra. Based on our studies, it can be concluded that microstructures of the barriers has the major effects on preventing Cu from diffusing through them to react with Si and this makes the multi-layer Ta/Ta(N), in overall, superior to the other two Ta and Ta(N) barriers.

Sign in / Sign up

Export Citation Format

Share Document