Oxidation Resistance of Copper Alloy Thin Films Formed by Chemical Vapor Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
P. Atanasova ◽  
V. Bhaskaran ◽  
T. Kodas ◽  
M. Hampden-Smith
Keyword(s):  
Oxidation Resistance ◽  
Vapor Deposition ◽  
Copper Alloy ◽  
Pure Copper ◽  
Chemical Vapor ◽  
Palladium Alloy ◽  
Alloy Films ◽  
Resistance To Oxidation ◽  
Different Temperatures ◽  
High Purity Alloy

AbstractCo-deposition of copper-palladium alloy films was demonstrated using low-pressure CVD from individual precursors - (hexafluoroacetylacetonato)copper(I)(vinyltrimethylsilane) [(hfac)Cu(I)vtms] and palladium(II)bis(hexafluoroacetylacetonate) [Pd(hfac)2], for Cu and Pd respectively. High-purity alloy films with controlled composition, microstructure and morphology were prepared and their oxidation behavior was examined at different temperatures and compared with that of pure copper CVD films with similar morphology. As-deposited copper-palladium alloy films showed improved resistance to oxidation up to 300°C in air. Enhanced oxidation resistance compared to Cu CVD films was observed at concentrations of palladium as low as 0.5 at. %.

Oxidation Resistance of Copper Alloy Thin Films Formed by Chemical Vapor Deposition

1996 ◽  
Vol 428 ◽  
Author(s):  
P. Atanasova ◽  
V. Bhaskaran ◽  
T. Kodas ◽  
M. Hampden-Smith
Keyword(s):  
Oxidation Resistance ◽  
Vapor Deposition ◽  
Copper Alloy ◽  
Pure Copper ◽  
Chemical Vapor ◽  
Palladium Alloy ◽  
Alloy Films ◽  
Resistance To Oxidation ◽  
Different Temperatures ◽  
High Purity Alloy

AbstractCo-deposition of copper-palladium alloy films was demonstrated using low-pressure CVD from individual precursors - (hexafluoroacetylacetonato)copper(I)(vinyltrimethylsilane) [(hfac)Cu(I)vtms] and palladium(II)bis(hexafluoroacetylacetonate) [Pd(hfac)2], for Cu and Pd respectively. High-purity alloy films with controlled composition, microstructure and morphology were prepared and their oxidation behavior was examined at different temperatures and compared with that of pure copper CVD films with similar morphology. As-deposited copper-palladium alloy films showed improved resistance to oxidation up to 300°C in air. Enhanced oxidation resistance compared to Cu CVD films was observed at concentrations of palladium as low as 0.5 at. %.

Metalorganic Chemical Vapor Deposition of Aluminum-Copper Alloy Films

1993 ◽  
Vol 32 (Part 2, No. 8A) ◽  
pp. L1078-L1080 ◽  
Author(s):  
Tomoharu Katagiri ◽  
Eiichi Kondoh ◽  
Nobuyuki Takeyasu ◽  
Tadashi Nakano ◽  
Hiroshi Yamamoto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Alloy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alloy Films ◽  
Aluminum Copper Alloy ◽  
Metalorganic Chemical

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

Temperature-Induced Structure and Morphological Transformation in SnS Prepared by a Chemical Vapor Deposition Method

2014 ◽  
Vol 513-517 ◽  
pp. 286-290 ◽  
Author(s):  
Ren Fu Zhuo ◽  
Yi Nong Wang ◽  
De Yan ◽  
Xiao Yong Xu ◽  
Zhi Guo Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Morphological Transformation ◽  
Simple Chemical ◽  
Different Temperatures ◽  
Sns Thin Films ◽  
Induced Structure ◽  
Made In

SnS thin films were deposited at different temperatures on silicon and quartz plates through directly elementary reaction via a simple chemical vapor deposition (CVD) process. The as-prepared products have a transformation of morphology from plate-like to granule-like when the temperature increased. A mechanism involving two competitive factors, surface energy and binding energy, was proposed to understand their growth. The products prepared at low temperature were single crystal while the films made in high temperature are polycrystal, the optical band gap (1.2~2.1ev) and the Sn:S atom ratios increases as the deposited temperature increases.

Preparation and Microwave Permittivity of Nano-Sized Si/C/N Powder

2005 ◽  
Vol 475-479 ◽  
pp. 3571-3574 ◽  
Author(s):  
Xiao Kui Liu ◽  
Wan Cheng Zhou ◽  
Fa Luo ◽  
Dong Mei Zhu
Keyword(s):  
Nitrogen Content ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dissipation Factor ◽  
Nano Powder ◽  
Heat Treated ◽  
Different Temperatures ◽  
Degree Of Crystallization ◽  
Microwave Permittivity ◽  
N Powder

Nano-sized Si/C/N powders are prepared from hexamethyldisilazane ((CH3)3Si)2NH) by chemical vapor deposition (CVD) at different pyrolysis temperatures from 900°C to 1200°C. The as-formed Si/C/N nano powder is amorphous, and after controlled heat-treatment, SiC crystals formed. The composition of the Si/C/N powders prepared at different conditions is analyzed and the result shows that the nitrogen content of the Si/C/N powder is related to the synthesizing temperature. Si/C/N powders heat-treated at different temperatures are mixed with paraffin wax and the microwave permittivity of the mixture is measured. The result shows that the e¢, e², and the dissipation factor tg d ( e²/ e¢) of the mixture are high at the frequency of 8.2~12.4GHz, and the nitrogen content and the degree of crystallization have influence on the microwave permittivity. We believe that the high value of e¢, e² ,and tg d are due to the dielectric relaxation as the result of nitrogen atoms doped in silicon carbide lattice.

Preparation of a-Si and a-Si-Alloy Films Using an Ion-Gun Chemical Vapor Deposition Method

1991 ◽  
Vol 30 (Part 1, No. 7) ◽  
pp. 1354-1359 ◽  
Author(s):  
Hisao Haku ◽  
Katsunobu Sayama ◽  
Tsugufumi Matsuoka ◽  
Shinya Tsuda ◽  
Shoichi Nakano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Alloy Films

Chemical vapor deposition of amorphous ruthenium–phosphorus alloy films

2007 ◽  
Vol 515 (13) ◽  
pp. 5298-5307 ◽  
Author(s):  
Jinhong Shin ◽  
Abdul Waheed ◽  
Wyatt A. Winkenwerder ◽  
Hyun-Woo Kim ◽  
Kyriacos Agapiou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Alloy Films ◽  
Phosphorus Alloy

Effect of Deposition Temperature on Surface Roughness of Nanocrystalline Diamond Film

2012 ◽  
Vol 476-478 ◽  
pp. 2353-2356
Author(s):  
Wen Qi Dai ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Yi Feng Liu ◽  
Ke Tang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Different Temperatures ◽  
Hot Filament

Nanocrystalline diamond (NCD) films were synthesized by hot-filament chemical vapor deposition (HFCVD) method at different temperatures (600 °C, 620°C, 640°C and 660°C). The AFM and Raman analyses demonstrated that deposition temperature has a great effect on the surface roughness and quality of NCD films and 620°C is the temperature to grow NCD films with smooth surfaces.

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