Monograin Powders And Layers For Photovoltaic Application

1996 ◽  
Vol 426 ◽  
Author(s):  
M. Altosaar ◽  
E. Mellikov ◽  
J. Hie ◽  
D. Meissner ◽  
T. Varema
Keyword(s):  
Crystal Growth ◽  
Cooling Rate ◽  
High Conductivity ◽  
Acceptor Impurity ◽  
Type Conductivity ◽  
Technological Factors ◽  
Photovoltaic Application ◽  
P Type

AbstractThe recrystallization of CdTe powders in different fluxes was studied and the possibility to grow p- and n - type CdTe monograin powders of high conductivity was shown. It was determined that very important technological factors for creating p - type conductivity in CdTe are the cooling rate and the presence of Te in flux. NaCl content in CdCl2 flux was found to inhibit the crystal growth and to allow for doping CdTe with Na that acts as an effective acceptor impurity in CdTe. The region of most effective added Na concentrations was found.

Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters

2009 ◽  
Vol 6 (12) ◽  
pp. 2621-2625 ◽  
Author(s):  
T. Mori ◽  
K. Nagamatsu ◽  
K. Nonaka ◽  
K. Takeda ◽  
M. Iwaya ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Efficiency ◽  
Type Conductivity ◽  
P Type ◽  
Uv Emitters

scholarly journals Electrical properties of CdTe thin layers

2019 ◽  
Vol 20 (4) ◽  
pp. 372-375
Author(s):  
V.V. Prokopiv ◽  
O.B. Kostyuk ◽  
B.S. Dzundza ◽  
T.M. Mazur ◽  
L.V. Turovska ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Thin Layers ◽  
Chemical Doping ◽  
Type Conductivity ◽  
Technological Factors ◽  
Layer Velocity ◽  
P Type

The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the technological factors of their production are investigated. The conductivity of the doped layer, velocity and depth of diffusion are determined.

Explanation of Observed P-Type Conductivity in Movpe ZnSE/GaAs Heterostructures

1990 ◽  
Vol 198 ◽  
Author(s):  
O. Briot ◽  
T. Cloitre ◽  
N. Tempier ◽  
R. Sauvezon ◽  
M. Averous ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Simple Model ◽  
Zinc Selenide ◽  
Epitaxial Films ◽  
Type Conductivity ◽  
Valence Bands ◽  
P Type ◽  
Electrical Characterizations

ABSTRACTTogether with the advanced growth technologies of zinc selenide epitaxial films by MOVPE or MBE, severals workers have reported the observation of p-type conductivity in this material. However, there are some inconsistencies in most of the papers reporting such results.We report here the MOVPE crystal growth of nominaly undoped ZnSe/GaAs S.I. layers using alkyls as precursors, and their optical and electrical characterizations. We show the possibility to observe p-type conductivity in ZnSe due to a hole accumulation at the interface in the GaAs side. This is consistent with a simple model taking Into account the conduction and valence bands discontinuities at the ZnSe/GaAs interface.

Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process

2021 ◽  
Vol 118 (11) ◽  
pp. 112102
Author(s):  
Wang Fu ◽  
Mingkai Li ◽  
Jiashuai Li ◽  
Guojia Fang ◽  
Pan Ye ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Step Process ◽  
Type Conductivity ◽  
P Type

scholarly journals Effect of Mn2+ substitution on the structure, properties and HER activity of cadmium phosphochlorides

RSC Advances ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 5134-5145
Author(s):  
Anand Roy ◽  
Anjali Singh ◽  
S. Assa Aravindh ◽  
Swaraj Servottam ◽  
Umesh V. Waghmare ◽  
...  
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Structure Properties

Mn2+ prefers the Cd-sites having larger number of tightly bounded Cl-ligands. Pure Cd7P4Cl6 exhibits n-type conductivity whereas Cd5.8Mn1.2P4Cl6 exhibits p-type conductivity. The HER activity of Cd7−yMnyP4Cl6 is superior to that of pristine Cd7P4Cl6.

p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

2010 ◽  
Vol 97 (15) ◽  
pp. 153126 ◽  
Author(s):  
G. D. Yuan ◽  
T. W. Ng ◽  
Y. B. Zhou ◽  
F. Wang ◽  
W. J. Zhang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Silicon Nanowires ◽  
Type Conductivity ◽  
Interface Charge ◽  
P Type ◽  
Interface Charge Transfer

Preparation and Properties of CdTe Films on Mo/Glass Substrates

2009 ◽  
Vol 1165 ◽  
Author(s):  
Vello Valdna ◽  
Maarja Grossberg ◽  
Hiie Jaan ◽  
Urve Kallavus ◽  
Valdek Mikli ◽  
...  
Keyword(s):  
Cadmium Chloride ◽  
Radiation Detectors ◽  
Cdte Film ◽  
Chloride Flux ◽  
Type Conductivity ◽  
Coated Glass ◽  
Glass Substrates ◽  
Group I ◽  
Cdte Films ◽  
P Type

AbstractShort-bandgap group II-VI compound cadmium telluride is widely used for the infrared optics, radiation detectors, and solar cells where p-type CdTe is needed. p-type conductivity of CdTe is mainly caused by the chlorine-based A-centers, and in part, by the less stable copper-oxygen complexes. As a rule, CdTe films are recrystallized by the help of a cadmium chloride flux that saturates CdTe with chlorine. In chlorine-saturated CdTe A-centers are converted to isoelectronic complexes that cause resistivity increasement of CdTe up to 9 orders of magnitude. Excess copper and oxygen or group I elements as sodium also deteriorate the p-type conductivity of CdTe like excess chlorine. p-type conductivity of CdTe can be restored e.g. by the vacuum annealing which removes excess chlorine from the film. Unfortunately, treatment that betters p-type conductivity of the CdTe film degrades the junction of the superstrate configuration cells. In this work we investigate possibilities to prepare p-type CdTe films on the molybdenum coated glass substrates. Samples were prepared by the vacuum evaporation and dynamic recrystallization of 6N purity CdTe on the top of Mo-coated glass substrates. Then samples were recrystallized with cadmium chloride flux under tellurium vapour pressure. Results of the test studies on the structure and electronic parameters of samples are presented and discussed.

First-Principles Study on the Conductive Properties of P-Doped ZnO

2009 ◽  
Vol 79-82 ◽  
pp. 1253-1256 ◽  
Author(s):  
Li Guan ◽  
Qiang Li ◽  
Xu Li ◽  
Jian Xin Guo ◽  
Bo Geng ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Density Functional ◽  
Lattice Structure ◽  
Mulliken Charge ◽  
Total Density ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Conductive Properties

In the present paper, the lattice structure, band structure and density of state of pure and P-doped ZnO are calculated by first-principle method based on density functional theory. By analyzing the Mulliken charge overlap population and bond length, it is found that the bond of P-Zn is longer and stronger than O-Zn bond for PO-ZnO. But for PZn-ZnO, the O-P bond becomes shorter and more powerful than O-Zn bond. Also, weak O-O bonds are formed in this case. Our results show that the final total energy of PO-ZnO is lower than PZn-ZnO. The lattice structure of PO-ZnO is more stability than PZn-ZnO. For PO-ZnO, The Fermi level moves into the valence band, which expresses that the holes appear on the top of valence band and thus the PO-ZnO exhibits p-type conductivity. For PZn-ZnO, the Fermi level moves up to the conductor band and the total density of states shifts to the lower energy region, thus PZn-ZnO shows the n-type conductivity.

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