Properties of Tetrahedral Amorphous Carbon Deposited by A Filtered Cathodic Vacuum ARC

1996 ◽  
Vol 423 ◽  
Author(s):  
M Chhowalla ◽  
C W Chen ◽  
B Kleinsorge ◽  
J Robertson ◽  
G A J Amaratunga ◽  
...  
Keyword(s):  
Band Gap ◽  
Amorphous Carbon ◽  
Deposition Temperature ◽  
Vacuum Arc ◽  
Ion Energy ◽  
Tetrahedral Amorphous Carbon ◽  
Optical Gap ◽  
Filtered Cathodic Vacuum Arc

AbstractThe properties of a highly sp3 bonded form of amorphous carbon denoted ta-C deposited from a filtered cathodic vacuum arc (FCVA) are described as a function of ion energy and deposition temperature. The sp3 fraction depends strongly on ion energy and reaches 85% at an ion energy of 100 eV. Other properties such as density and band gap vary in a similar fashion, with the optical gap reaching a maximum of 2.3 eV. These films are very smooth with area roughness of order 1 nm. The sp3 fraction falls suddenly to almost zero for deposition above about 200°C.

FCVA-Synthesized Tetrahedral Amorphous Carbon Films for Biomedical Applications

2007 ◽  
Vol 336-338 ◽  
pp. 1577-1580 ◽  
Author(s):  
Chuan Lin Zheng ◽  
Wu Bao Yang ◽  
X. Chang
Keyword(s):  
Amorphous Carbon ◽  
Biomedical Applications ◽  
Pure Titanium ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Negative Bias Voltage ◽  
Tetrahedral Amorphous Carbon ◽  
In Vitro Measurements ◽  
Filtered Cathodic Vacuum Arc

Tetrahedral amorphous carbon (ta-C) films were deposited onto Si(100) wafers by using filtered cathodic vacuum arc technique (FCVA). The influence of the negative bias voltage applied to substrates on film structures was studied by Raman spectroscopy, X-ray photoemission spectroscopy (XPS). The ta-C films showed maximal sp3 fractions 87%, the hardness and elastic modulus of the ta-C film is 72 and 480 GPa, respectively. In vitro measurements of contact angle and platelet adhesion were applied to evaluate the biocompatibility of the ta-C films in comparison with that of NiTi, 316L and pure titanium. The results show that the ta-C films have hydrophobicity and exhibit better hemocompatibility which are very suitable for biomedical applications.

Tetrahedral Amorphous Carbon Thin Film Transistors

1996 ◽  
Vol 423 ◽  
Author(s):  
F. J. Clough ◽  
B. Kleinsorge ◽  
W. I. Milne ◽  
J. Robertson
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Undoped Material ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type ◽  
Amorphous Carbon Thin Film

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.

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