Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)

1996 ◽  
Vol 422 ◽  
Author(s):  
I. N. Yassievich ◽  
O. B. Gusev ◽  
M. S. Bresler ◽  
W. Fuhs ◽  
A. N. Kuznetsov ◽  
...  
Keyword(s):  
Silicon Films ◽  
Experimental Results ◽  
Excitation Mechanism ◽  
Auger Process ◽  
Hydrogenated Silicon ◽  
Erbium Ions ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

AbstractPhoto- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain consistently the whole set of our experimental results.

Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films

2003 ◽  
Vol 37 (7) ◽  
pp. 766-768
Author(s):  
A. G. Kazanskii ◽  
H. Mell ◽  
E. I. Terukov ◽  
P. A. Forsh
Keyword(s):  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Conductivity Change ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

Advanced modeling for optical characterization of amorphous hydrogenated silicon films

2013 ◽  
Vol 541 ◽  
pp. 12-16 ◽  
Author(s):  
Daniel Franta ◽  
David Nečas ◽  
Lenka Zajíčková ◽  
Ivan Ohlídal ◽  
Jiří Stuchlík
Keyword(s):  
Optical Characterization ◽  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon

1998 ◽  
Vol 80 (1-4) ◽  
pp. 335-338 ◽  
Author(s):  
O.B Gusev ◽  
M.S Bresler ◽  
E.I Terukov ◽  
K.D Tsendin ◽  
I.N Yassievich
Keyword(s):  
Room Temperature ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Erbium Doped

Comparative study of hydrogen evolution from amorphous hydrogenated silicon films

1982 ◽  
Vol 90 (2) ◽  
pp. 145-152 ◽  
Author(s):  
W. Beyer ◽  
H. Wagner ◽  
J. Chevallier ◽  
K. Reichelt
Keyword(s):  
Comparative Study ◽  
Hydrogen Evolution ◽  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

scholarly journals Amorphous hydrogenated silicon films produced by an expanding argon-silane plasma investigated with spectroscopic IR ellipsometry

1991 ◽  
Vol 204 (1) ◽  
pp. 59-75 ◽  
Author(s):  
A.T.M. Wilbers ◽  
G.J. Meeusen ◽  
M. Haverlag ◽  
G.M.W. Kroesen ◽  
D.C. Schram ◽  
...  
Keyword(s):  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silane Plasma

Effect of the Substrate Temperature on the Transition from Amorphous to Microcrystalline Silicon with High Hydrogen Dilution

2013 ◽  
Vol 773 ◽  
pp. 520-523
Author(s):  
Ming Liang Zhang ◽  
Hui Dong Yang ◽  
Kai Zhao Yang
Keyword(s):  
Substrate Temperature ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
High Hydrogen ◽  
Hydrogenated Silicon ◽  
Glass Substrates ◽  
Amorphous Hydrogenated Silicon ◽  
The Stability

Transition films of amorphous hydrogenated silicon (a-Si:H) to microcrystalline silicon (μc-Si:H) have attracted much attention due to the stability, high overall quality for solar cells configuration. Hydrogenated amorphous and microcrystalline silicon films were deposited on glass substrates by a conventional plasma enhanced chemical vapor deposition (PEVCD) varying the substrate temperature from 275 to 350 °C. A silane concentration of 4% and a total flow rate of 100 sccm were used at a gas pressure of 267 Pa. The film thicknesses of the prepared samples were between 700 and 900 nm estimated from the optical transmission spectra. The deposition rates were between 0.2 and 0.3 nm/s. The phase composition of the deposited silicon films were investigated by Raman spectroscopy. The transition from amorphous to microcrystalline silicon was found at the higher temperatures. The crystallization process of the amorphous silicon can be affected by the substrate temperature. A narrow structural transition region was observed from the changes of the crystalline volume fraction. The dark electrical conductivity of the silicon films increased as the substrate temperature increasing.

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