Temperature Dependence of the Photoconductivity and the Near Absence of Light-Induced Defects in a-SixGe1-x:H

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Fritzsche ◽  
P. Stradins ◽  
G. Belomoin
Keyword(s):  
Glow Discharge ◽  
Temperature Dependence ◽  
Conduction Band ◽  
Low Temperatures ◽  
Elevated Temperatures ◽  
Thermal Quenching ◽  
Amorphous Si ◽  
Induced Defects ◽  
Band Tails

AbstractThe photoconductivities ap of glow discharge deposited a-Ge:H and amorphous Si-Ge alloys prepared in different laboratories were measured between 4.2K and 300K and compared with σp(T) of intrinsic and compensated a-Si:H films. The alloys as well as a-Ge:H do not exhibit thermal quenching of σp(T) at elevated temperatures which suggests that the valence and conduction band tails have similar widths. Remarkable is the near absence of light-induced metastable defects in the alloys as well as in a-Ge:H even after prolonged exposures at low temperatures.

Light Induced Defects in a-Si:H, Temperature Dependence of their Creation and Anneal and their effect on Photocarrier Lifetime

1994 ◽  
Vol 336 ◽  
Author(s):  
Paul Stradins ◽  
Hellmut Fritzsche ◽  
Minh Q. Tran
Keyword(s):  
Glow Discharge ◽  
Temperature Dependence ◽  
Low Temperatures ◽  
Plasma Discharge ◽  
Hot Wire ◽  
Defect Creation ◽  
Normal Glow Discharge ◽  
Induced Defects ◽  
Kinetics Of ◽  
Effect Of Light

ABSTRACTWe compared the effect of light soaking on the photoresponse and defect concentration ND of samples prepared by normal glow discharge, by remote plasma discharge, by the heated mesh and by the hot wire deposition methods. After exposure to 4×1027 cm−3 absorbed photons all samples have the nearly the same Np and photoresponse. At low temperatures additional defects with small anneal energies are created. Defects created at low temperatures were found to relax between 100K and 300K before they anneal. These new results cannot be explained by present models of defect creation. The kinetics of defect creation at low temperatures is discussed.

Electronic and Optical Properties of A—(Si, Ge):H Alloys

1985 ◽  
Vol 49 ◽  
Author(s):  
Vikram Daial ◽  
James F. Booker ◽  
Mark Leonard
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Glow Discharge ◽  
Gas Phase ◽  
Valence Band ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Electronic And Optical Properties ◽  
Photo Conductivity ◽  
Amorphous Si

AbstractWe describe the preparation and electronic and optical properties of amorphous (Si, Ge) alloys. A—(Si, Ge):H alloys were prepared by glow discharge decomposition of SiH4 and GeH4. The bandgap was varied between 1.78 and 1.42 eV by changing the GeH4:SiH4 ratio in the gas phase. We find a distinct influence of growth temperature on electronic properties. Films grown at low temperatures (200–250C) tendto have much lower photo conductivity than films grown at higher temperatures (300–325C). The electron (μ τ) products of high temperature films are general> 1X10–7 cm2/V. We also obtain very sharp valence band tails in a—(Si, Ge):H alloys, with slopes of ∼ 40 meV. The hole (μ τ) product is generally ∼1–2X10–8 cm2/V. All these properties suffer a catastrophic decline when bandgap is reduced below about 1.5 eV.

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

TECHALLOY NICKEL 200

Alloy Digest ◽  
1977 ◽  
Vol 26 (6) ◽  
Keyword(s):  
Physical Properties ◽  
Surface Treatment ◽  
Low Temperatures ◽  
Nickel Alloys ◽  
Elevated Temperatures ◽  
Heat Treating ◽  
General Purpose ◽  
Commercially Pure ◽  
Electrical Components ◽  
Nickel 200

Abstract TECHALLOY Nickel 200 is commercially pure wrought nickel. It maintains good strength at elevated temperatures and is tough and ductile at low temperatures. It is a general-purpose material when the properties of nickel alloys are not needed. Its many uses include spun and cold-formed parts, electrical components, transducers and nickel-cadmium batteries. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on forming, heat treating, machining, joining, and surface treatment. Filing Code: Ni-246. Producer or source: Techalloy Company Inc..

93Nb Nuclear Spin-Spin Relaxation in the Low-Dimensional Antiferromagnet Fe0.25NbS2

2007 ◽  
Vol 62 (10-11) ◽  
pp. 627-632
Author(s):  
Noriaki Okubo
Keyword(s):  
Temperature Dependence ◽  
Spin Relaxation ◽  
Nuclear Spin ◽  
Low Temperatures ◽  
Fast Decay ◽  
Low Dimensional

93Nb nuclear spin-spin relaxation has been examined in the low-dimensional antiferromagnet Fe0.25NbS2 between 4.2 K and 300 K. The relaxation is characterized by two T2’s. The temperature dependence is discussed together with the origin of the disappearance of the fast decay at low temperatures.

scholarly journals Temperature Dependence of Mechanical, Electrical Properties and Crystal Structure of Polyethylene Blends for Cable Insulation

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1922 ◽  
Author(s):  
Lunzhi Li ◽  
Lisheng Zhong ◽  
Kai Zhang ◽  
Jinghui Gao ◽  
Man Xu
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Elevated Temperatures ◽  
Breakdown Strength ◽  
Temperature Stability ◽  
Xrd Analysis ◽  
Insulation Material ◽  
Cable Insulation ◽  
Polyethylene Blends

There is a long-standing puzzle concerning whether polyethylene blends are a suitable substitution for cable-insulation-used crosslinking polyethylene (XLPE) especially at elevated temperatures. In this paper, we investigate temperature dependence of mechanical, electrical properties of blends with 70 wt % linear low density polyethylene (LLDPE) and 30 wt % high density polyethylene (HDPE) (abbreviated as 70 L-30 H). Our results show that the dielectric loss of 70 L-30 H is about an order of magnitude lower than XLPE, and the AC breakdown strength is 22% higher than XLPE at 90 °C. Moreover, the dynamic mechanical thermal analysis (DMA) measurement and hot set tests suggest that the blends shows optimal mechanical properties especially at high temperature with considerable temperature stability. Further scanning electron microscope (SEM) observation and X-ray diffraction (XRD) analysis uncover the reason for the excellent high temperature performance and temperature stability, which can be ascribed to the uniform fine-spherulite structure in 70 L-30 H blends with high crystallinity sustaining at high temperature. Therefore, our findings may enable the potential application of the blends as cable insulation material with higher thermal-endurance ability.

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