A-Si:H Films Deposited by Dc-Masd Technique at High Substrate Temperature

1996 ◽  
Vol 420 ◽  
Author(s):  
O. A. Golikova ◽  
A. N. Kuznetsov ◽  
V. Kh. Kudojarova ◽  
M. M. Kazanin ◽  
A. Ikosarev
Keyword(s):  
Substrate Temperature ◽  
Hydrogen Content ◽  
High Substrate Temperature ◽  
Decomposition Technique ◽  
High Substrate ◽  
Optimized Conditions

AbstractDc-magnetron assisted silane decomposition technique has been tested for deposition of undoped a-Si:H at substrate temperature Ts=300–400°C. In the optimized conditions device-quality a-Si: H films were deposited independently of Ts. A low hydrogen content CH (up to 2 at.°) and microstructure variations are characteristic of the MASD films.

Characteristics of a-Si solar cells prepared by the super chamber at a high substrate temperature

1994 ◽  
Vol 2 (3) ◽  
pp. 211-219 ◽  
Author(s):  
Masato Nishikuni ◽  
Tsuyoshi Takahama ◽  
Shingo Okamoto ◽  
Kunimoto Ninomiya ◽  
Hidenori Nishiwaki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
High Substrate Temperature ◽  
High Substrate ◽  
Si Solar Cells

Successful fabrication of high Ku columnar CoPt-SiO2 granular film sputtered under high substrate temperature

2014 ◽  
Vol 115 (17) ◽  
pp. 17B752 ◽  
Author(s):  
Kim Kong Tham ◽  
Shintaro Hinata ◽  
Shin Saito ◽  
Migaku Takahashi
Keyword(s):  
Substrate Temperature ◽  
High Substrate Temperature ◽  
Granular Film ◽  
High Substrate

On the Coercivity of Granular Fe-SiO2 Films

1988 ◽  
Vol 132 ◽  
Author(s):  
S. H. Liou ◽  
C. H. Chen ◽  
H. S. Chen ◽  
A. R. Kortan ◽  
C. L. Chien
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
High Substrate Temperature ◽  
Linear Temperature ◽  
Sio2 Films ◽  
High Substrate ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThe coercivity of granular Fe embedded inside an SiO2 matrix was as high as 3 kOe at 6K, and 1.1 kOe at 300K. In this study, we observed a linear temperature (T) dependence of the coercivity for the samples prepared at a high substrate temperature (773K), and a T1/2 dependence of the coercivity for the sample prepared at a low substrate temperature (473K). This indicates that the microstructures of films prepared at different substrate temperatures are not the same. This phenomenon can be explained if we assume that there are interconnections between particles for the sample prepared at a high substrate temperature. We looked for evidence of interconnections between particles with transmission electron microscopy (TEM).

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